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Infineon Technologies |
IGBT 600V 40A 160W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 160W
- Switching Energy: 320µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 34ns/110ns
- Test Condition: 480V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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paquet: TO-247-3 |
Stock38 004 |
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Infineon Technologies |
MOSFET N-CH 80V 12A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MN
- Package / Case: DirectFET? Isometric MN
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paquet: DirectFET? Isometric MN |
Stock3 296 |
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Infineon Technologies |
MOSFET N-CH 55V 10A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6 080 |
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Infineon Technologies |
MOSFET P-CH 55V 19A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock19 200 |
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Infineon Technologies |
MOSFET N-CH 30V 22A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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paquet: 8-PowerTDFN |
Stock4 368 |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock245 640 |
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Infineon Technologies |
MOSFET NCH 40V 523A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13975pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 0.69 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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paquet: TO-263-7, D2Pak (6 Leads + Tab) |
Stock19 176 |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock16 296 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock6 544 |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET L8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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paquet: DirectFET? Isometric L8 |
Stock32 664 |
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Infineon Technologies |
IC REG LINEAR 3.3V 500MA 8DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 20V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.45V @ 500mA
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA ~ 31mA
- PSRR: 65dB (120Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Reverse Polarity
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-8, e-Pad
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paquet: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3 200 |
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Infineon Technologies |
IC REG BUCK ADJ 15A SYNC 24LGA
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 5.5V
- Voltage - Input (Max): 13.2V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 8V
- Current - Output: 15A
- Frequency - Switching: 170kHz ~ 460kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -10°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-LGA
- Supplier Device Package: LGA (9x9)
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paquet: 24-LGA |
Stock19 068 |
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Infineon Technologies |
IC SW LOW EMI CURR SENSE D2PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 26 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 23A
- Rds On (Typ): 5.5 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Adjustable), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2PAK
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paquet: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Stock5 600 |
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Infineon Technologies |
IC SW IPS 1CH HIGH SIDE DPAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 36V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3.9A
- Rds On (Typ): 24 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: D-Pak
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paquet: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock2 800 |
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Infineon Technologies |
IC PWR SW HI-SIDE 2CH 14DSO
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 36 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.2A
- Rds On (Typ): 100 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-14-40-EP
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paquet: 14-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock26 430 |
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Infineon Technologies |
IC NETWORK TERMINATOR MQFP-64
- Function: Echo Cancellation
- Interface: ISDN
- Number of Circuits: 4
- Voltage - Supply: 3 V ~ 3.6 V
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 64-QFP
- Supplier Device Package: P-64-MQFP
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paquet: 64-QFP |
Stock7 824 |
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Infineon Technologies |
IC ANLG BAROMETRIC SNSR DSOF8-16
- Pressure Type: -
- Operating Pressure: -
- Output Type: -
- Output: -
- Accuracy: -
- Voltage - Supply: -
- Port Size: -
- Port Style: -
- Features: -
- Termination Style: -
- Maximum Pressure: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock6 336 |
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Infineon Technologies |
TRANSMITTER ASK/FSK SGL TSSOP16
- Frequency: 915MHz
- Applications: Alarm Systems, Communication Systems
- Modulation or Protocol: ASK, FSK
- Data Rate (Max): 20 kbps
- Power - Output: 3.2dBm
- Current - Transmitting: 7mA
- Data Interface: PCB, Surface Mount
- Antenna Connector: PCB, Surface Mount
- Memory Size: -
- Features: -
- Voltage - Supply: 2.1 V ~ 4 V
- Operating Temperature: -25°C ~ 85°C
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
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paquet: 16-TSSOP (0.173", 4.40mm Width) |
Stock4 734 |
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Infineon Technologies |
IC RELAY 200VAC/DC 180MA 16-DIP
- Circuit: DPST (2 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 24 Ohm
- Load Current: 180mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 200 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
- Supplier Device Package: 16-DIP
- Relay Type: Relay
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paquet: 16-DIP (0.300", 7.62mm), 10 Leads |
Stock14 772 |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC FRAM 2MBIT SPI 50MHZ 8DFN
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 2Mbit
- Memory Interface: SPI
- Clock Frequency: 50 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 1.71V ~ 1.89V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x6)
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC CLOCK GEN PROG FLASH 16-TSSOP
- Type: -
- PLL: -
- Input: -
- Output: -
- Number of Circuits: -
- Ratio - Input:Output: -
- Differential - Input:Output: -
- Frequency - Max: -
- Divider/Multiplier: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
TRAVEO-55NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 240MHz
- Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
- Peripherals: DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 128
- Program Memory Size: 4.171875MB (4.171875M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 2.125M x 8
- Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
- Data Converters: A/D 50x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 216-LQFP Exposed Pad
- Supplier Device Package: 216-TEQFP (24x24)
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paquet: - |
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Infineon Technologies |
PCM INTERFACE CONTROLLER (PIC)
- Function: -
- Interface: -
- Number of Circuits: -
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 124VFBGA
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 150MHz
- Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 100
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 512K x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 124-VFBGA
- Supplier Device Package: 124-VFBGA (9x9)
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paquet: - |
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Infineon Technologies |
SIC_DISCRETE
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 169W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-11
- Package / Case: TO-247-4
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paquet: - |
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Infineon Technologies |
DIODE
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 2.2 kV
- Current - On State (It (AV)) (Max): 159 A
- Current - On State (It (RMS)) (Max): 250 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4000A @ 50Hz
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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paquet: - |
Request a Quote |
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