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Produits IXYS

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IXGR60N60U1
IXYS

IGBT 600V 75A 300W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
  • Power - Max: 300W
  • Switching Energy: 16mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 50ns/600ns
  • Test Condition: 480V, 60A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
paquet: ISOPLUS247?
Stock3 248
hot IXGH31N60
IXYS

IGBT 600V 60A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
  • Power - Max: 150W
  • Switching Energy: 6mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 15ns/400ns
  • Test Condition: 480V, 31A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
paquet: TO-247-3
Stock477 636
hot IXGH20N60B
IXYS

IGBT 600V 40A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 150µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 15ns/150ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
paquet: TO-247-3
Stock34 008
IXGT40N60C2
IXYS

IGBT 600V 75A 300W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 18ns/90ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock5 872
IXGA7N60C
IXYS

IGBT 600V 14A 54W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 54W
  • Switching Energy: 70µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 9ns/65ns
  • Test Condition: 480V, 7A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 072
IXGX120N120B3
IXYS

IGBT 1200V 200A 830W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 370A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 5.5mJ (on), 5.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 36ns/275ns
  • Test Condition: 600V, 100A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
paquet: TO-247-3
Stock5 392
IXXX100N60C3H1
IXYS

IGBT 600V 170A 695W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 340A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
  • Power - Max: 695W
  • Switching Energy: 2mJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 360V, 70A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
paquet: TO-247-3
Stock3 840
IXYP8N90C3
IXYS

IGBT 900V 20A 125W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
  • Power - Max: 125W
  • Switching Energy: 460µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.3nC
  • Td (on/off) @ 25°C: 16ns/40ns
  • Test Condition: 450V, 8A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock4 784
IXGF25N250
IXYS

IGBT 2500V 30A 114W I4-PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
  • Power - Max: 114W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
paquet: i4-Pac?-5 (3 leads)
Stock7 680
IXYX120N120C3
IXYS

IGBT 1200V 240A 1500W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 700A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
  • Power - Max: 1500W
  • Switching Energy: 6.75mJ (on), 5.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 412nC
  • Td (on/off) @ 25°C: 35ns/176ns
  • Test Condition: 600V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
paquet: TO-247-3
Stock7 584
hot IXTP182N055T
IXYS

MOSFET N-CH 55V 182A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock49 380
IXFR80N60P3
IXYS

MOSFET N-CH 600V 48A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 76 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock7 392
IXTT120N15P
IXYS

MOSFET N-CH 150V 120A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock7 840
hot IXTH140P05T
IXYS

MOSFET P-CH 50V 140A TO-247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 298W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock5 744
IXTT26N50P
IXYS

MOSFET N-CH 500V 26A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock4 320
IXTH86N20T
IXYS

MOSFET N-CH 200V 86A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock3 056
IXTQ74N15T
IXYS

MOSFET N-CH 150V 74A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
paquet: TO-3P-3, SC-65-3
Stock2 752
IXTB62N50L
IXYS

MOSFET N-CH 500V 62A PLUS264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 550nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 800W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 31A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264?
  • Package / Case: TO-264-3, TO-264AA
paquet: TO-264-3, TO-264AA
Stock7 168
CLA5E1200UC
IXYS

THYRISTOR PHASE 1200V TO-252

  • Voltage - Off State: 1200V
  • Voltage - Gate Trigger (Vgt) (Max): 1.8V
  • Current - Gate Trigger (Igt) (Max): 20mA
  • Voltage - On State (Vtm) (Max): 1.6V
  • Current - On State (It (AV)) (Max): 5A
  • Current - On State (It (RMS)) (Max): 7.8A
  • Current - Hold (Ih) (Max): 30mA
  • Current - Off State (Max): 10µA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3 920
IXHH40N150HV
IXYS

THYRISTOR MOS 1500V 40A TO-247HV

  • Voltage - Off State: 1500V
  • Voltage - Gate Trigger (Vgt) (Max): -
  • Current - Gate Trigger (Igt) (Max): -
  • Voltage - On State (Vtm) (Max): -
  • Current - On State (It (AV)) (Max): -
  • Current - On State (It (RMS)) (Max): -
  • Current - Hold (Ih) (Max): -
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): -
  • SCR Type: Standard Recovery
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
paquet: TO-247-3 Variant
Stock6 112
MCO500-12IO1
IXYS

MOD THYRISTOR SGL 1200V Y1-CU

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 560A
  • Current - On State (It (RMS)) (Max): 880A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 300mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A, 16000A
  • Current - Hold (Ih) (Max): 300mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
paquet: Y1-CU
Stock5 584
DPF60I200HA
IXYS

DIODE ARRAY GP 200V 60A TO247AD

  • Diode Configuration: -
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD (HA)
paquet: TO-247-2
Stock5 168
DSB60C30HB
IXYS

DIODE ARRAY SCHOTTKY 30V TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD (HB)
paquet: TO-3P-3 Full Pack
Stock2 288
IXFH26N100X
IXYS

MOSFET N-CH 1000V 26A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 860W (Tc)
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: -
Request a Quote
IXTM10P60
IXYS

POWER MOSFET TO-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
QV8025RH5TP
IXYS

TRIAC 800V 25A TO220

  • Triac Type: Standard
  • Voltage - Off State: 800 V
  • Current - On State (It (RMS)) (Max): 25 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.3 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
  • Current - Gate Trigger (Igt) (Max): 50 mA
  • Current - Hold (Ih) (Max): 75 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
paquet: -
Stock3 000
DPG30I600AHA
IXYS

POWER DIODE DISCRETES-FRED TO-24

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
IXYH30N120B4
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 174 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 500 W
  • Switching Energy: 4.4mJ (on), 2.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 20ns/245ns
  • Test Condition: 960V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
paquet: -
Request a Quote