Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 92A TO247-2
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paquet: - |
Stock1 071 |
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1200 V | 92A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 1835pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.7KV 122A TO247
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paquet: - |
Stock540 |
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1700 V | 122A | 1.8 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 1700 V | 4577pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 650V 82A TO247-2
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paquet: - |
Stock4 068 |
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650 V | 82A | 1.8 V @ 60 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 1463pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.7KV 25A TO247-2
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paquet: - |
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1700 V | 25A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 6 µA @ 1700 V | 334pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.7KV 18A TO263-7
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paquet: - |
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1700 V | 18A | - | No Recovery Time > 500mA (Io) | - | - | 470pF @ 1V, 1MHz | Surface Mount | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 50A TO252-2
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paquet: - |
Request a Quote |
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1200 V | 50A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 660pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 54A TO220-2
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paquet: - |
Request a Quote |
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1200 V | 54A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 660pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 8A TO252-2
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paquet: - |
Stock4 914 |
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1200 V | 8A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 73pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 94A TO220-2
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paquet: - |
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1200 V | 94A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 1298pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 90A TO247-2
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1200 V | 90A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 1298pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 43A TO220-2
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paquet: - |
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1200 V | 43A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 7 µA @ 1200 V | 545pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 40A TO252-2
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paquet: - |
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1200 V | 40A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 7 µA @ 1200 V | 545pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.7KV 216A TO247
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paquet: - |
Request a Quote |
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1700 V | 216A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1700 V | 3193pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
1200V 30A TO-263-7 SIC SCHOTTKY
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paquet: - |
Stock7 095 |
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1200 V | 59A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1.2 kV | 1101pF @ 1V, 1MHz | Surface Mount | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.7KV 52A TO247-2
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paquet: - |
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1700 V | 52A | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 2350pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 27A TO252-2
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paquet: - |
Request a Quote |
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1200 V | 27A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 29A TO220-2
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paquet: - |
Request a Quote |
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1200 V | 29A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
650V 30A TO-263-7 SIC SCHOTTKY M
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paquet: - |
Stock2 400 |
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650 V | 51A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 735pF @ 1V, 1MHz | Surface Mount | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 12A TO220-2
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1200 V | 12A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 2 µA @ 1200 V | 127pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 95A DO5
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1200 V | 95A | 1.5 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 1200 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 75A TO247-2
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paquet: - |
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1200 V | 75A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 1200 V | 1089pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 82A TO220-2
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paquet: - |
Request a Quote |
|
1200 V | 82A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 1200 V | 1089pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
3300V 5A TO-263-7 SIC SCHOTTKY M
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paquet: - |
Stock2 253 |
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3300 V | 11A | 3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 3.3 kV | 337pF @ 1V, 1MHz | Surface Mount | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
1700V 5A TO-247-2 SIC SCHOTTKY M
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paquet: - |
Request a Quote |
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1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1.7 kV | 361pF @ 1V, 1MHz | Surface Mount | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 3.3KV 14A TO263-7
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paquet: - |
Request a Quote |
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3300 V | 14A | 3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 3000 V | 288pF @ 1V, 1MHz | Surface Mount | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 3.3KV 5A TO263-7
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paquet: - |
Stock5 040 |
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3300 V | 5A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | Surface Mount | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | 175°C |
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GeneSiC Semiconductor |
DIODE GP 1.2KV 165A DO205AA
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paquet: - |
Request a Quote |
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1200 V | 165A | 1.5 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 22 mA @ 1200 V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 212A TO247
|
paquet: - |
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1200 V | 212A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 3263pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |