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Diodes - Redresseurs - Matrices

Dossiers 16 443
Page  123/588
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
BAV99HDWQ-7
Diodes Incorporated

DIODE ARRAY GEN PURP 100V SOT363

  • Diode Configuration: 2 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock6 096
Standard
100V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
-65°C ~ 150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
MBR20H90CTG-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-220AC

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock6 880
-
-
-
-
-
-
-
-
-
-
-
MBRT40030L
GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
paquet: Three Tower
Stock4 320
Schottky
30V
200A
580mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 30V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBR20H45CT-E3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock2 416
Schottky
45V
10A
630mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
203CMQ100
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 100A TO244AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 100V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
paquet: TO-244AB
Stock6 160
Schottky
100V
100A
860mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 100V
-55°C ~ 175°C
Chassis Mount
TO-244AB
TO-244AB
SCPNP5
Semtech Corporation

ASSY DOUBLER 5.5A 5KV STD REC

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 5000V
  • Current - Average Rectified (Io) (per Diode): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 5V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2000ns
  • Current - Reverse Leakage @ Vr: 1µA @ 5000V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: -
paquet: Module
Stock6 304
-
5000V
5.5A
5V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2000ns
1µA @ 5000V
-55°C ~ 150°C
-
Module
-
HTZ120A51K
IXYS

DIODE MODULE 51KV 2A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 51000V
  • Current - Average Rectified (Io) (per Diode): 2A
  • Voltage - Forward (Vf) (Max) @ If: 36.8V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 51000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
paquet: Module
Stock5 440
Standard
51000V
2A
36.8V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
500µA @ 51000V
-
Chassis Mount
Module
Module
209CNQ150
SMC Diode Solutions

DIODE SCHOTTKY 150V 100A PRM4

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.03V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 150V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: PRM4
  • Supplier Device Package: PRM4 (Non-Isolated)
paquet: PRM4
Stock5 152
Schottky
150V
100A
1.03V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 150V
-55°C ~ 175°C
Chassis Mount
PRM4
PRM4 (Non-Isolated)
DSEP2X60-12A
IXYS

DIODE MODULE 1.2KV 60A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.42V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 1mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
paquet: SOT-227-4, miniBLOC
Stock6 784
Standard
1200V
60A
2.42V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
1mA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
GSXF030A120S1-D3
Global Power Technologies Group

DIODE FAST REC 1200V 30A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.35V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 25µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
paquet: SOT-227-4, miniBLOC
Stock2 832
Standard
1200V
30A
2.35V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
25µA @ 1200V
-55°C ~ 175°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-113CNQ100ASMPBF
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V D618SM

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 55A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 110A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: D-61-8-SM
  • Supplier Device Package: D-61-8-SM
paquet: D-61-8-SM
Stock2 944
Schottky
100V
55A
1V @ 110A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
175°C (Max)
Through Hole
D-61-8-SM
D-61-8-SM
S8-4148/TR7
Microsemi Corporation

DIODE ARRAY GP 75V 400MA 8SOIC

  • Diode Configuration: 4 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io) (per Diode): 400mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock3 792
Standard
75V
400mA (DC)
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
100nA @ 50V
-55°C ~ 150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
VS-HFA08TB120STRRP
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 1200V 8A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 552
Standard
1200V
8A (DC)
3.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
10µA @ 1200V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
BAS70-04-HE3-18
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 70V SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock6 000
Schottky
70V
200mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 50V
125°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
VB20100C-E3/4W
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO263

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 100V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock16 380
Schottky
100V
10A
790mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 100V
-40°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot SB05W05C-TB-E
ON Semiconductor

DIODE ARRAY SCHOTTKY 50V 3CP

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 50µA @ 25V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: 3-CP
paquet: SC-96
Stock72 000
Schottky
50V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
50µA @ 25V
-55°C ~ 125°C
Surface Mount
SC-96
3-CP
SCS210KE2HRC
Rohm Semiconductor

DIODE ARRAY SCHOTTKY 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 20A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 600V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: TO-247-3
Stock9 216
Silicon Carbide Schottky
650V
20A (DC)
1.55V @ 20A
No Recovery Time > 500mA (Io)
-
400µA @ 600V
175°C (Max)
Through Hole
TO-247-3
TO-247
NTE6234
NTE Electronics, Inc

DIODE MODULE GP 1600V 190A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): 190A
  • Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12 µA @ 1600 V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
paquet: -
Request a Quote
Standard
-
190A
1.38 V @ 600 A
Standard Recovery >500ns, > 200mA (Io)
-
12 µA @ 1600 V
-
Chassis Mount
Module
Module
MSRT200140D
GeneSiC Semiconductor

DIODE MODULE GP 1.4KV 3TOWER

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
paquet: -
Request a Quote
Standard
1400 V
200A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1400 V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
PCDH3065CCGB_T0_00601
Panjit International Inc.

DIODE ARR SIC 650V 15A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
paquet: -
Stock4 500
SiC (Silicon Carbide) Schottky
650 V
15A
1.6 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247AD
DD600N14KHPSA2
Infineon Technologies

DIODE MODULE GP 1.4KV 600A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
paquet: -
Request a Quote
Standard
1400 V
600A
1.32 V @ 1800 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1400 V
-40°C ~ 150°C
Chassis Mount
Module
Module
VX30202CHM3-P
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 200V 15A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: -
Request a Quote
Schottky
200 V
15A
840 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
-40°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
CMPD2836-TR-PBFREE
Central Semiconductor Corp

DIODE ARRAY GP 75V 200MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io) (per Diode): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 240 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: -
Stock61 311
Standard
75 V
200mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
100 nA @ 240 V
-65°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
SFF1604G
Taiwan Semiconductor Corporation

DIODE ARRAY GP 200V 16A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 16A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
paquet: -
Stock600
Standard
200 V
16A (DC)
975 mV @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
-55°C ~ 150°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
SLS120J080A-ISBTH
Luminus Devices Inc.

DIODE MODULE 1200V-80A SOT-227

  • Diode Configuration: 2 Independent
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 80 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 240 µA @ 1.2 kV
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
paquet: -
Request a Quote
SiC (Silicon Carbide) Schottky
1200 V
80A
1.4 V @ 80 A
No Recovery Time > 500mA (Io)
0 ns
240 µA @ 1.2 kV
-55°C ~ 175°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
BD6200CS_L2_00001
Panjit International Inc.

DIODE ARR SCHOTT 200V 6A TO252

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
paquet: -
Stock9 000
Schottky
200 V
6A
900 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 200 V
-65°C ~ 175°C
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
VX60202PGW-M3-P
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 200V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
paquet: -
Stock132
Schottky
200 V
30A
920 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
-40°C ~ 175°C
Through Hole
TO-247-3
TO-247AD
MBR3060PT_T0_00001
Panjit International Inc.

DIODE ARR SCHOTT 60V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
paquet: -
Stock7 086
Schottky
60 V
30A
750 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
-65°C ~ 175°C
Through Hole
TO-247-3
TO-247AD (TO-3P)