Page 36 - Transistors - JFET | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - JFET

Dossiers 1 142
Page  36/41
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MV2N4858UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock2 048
-
-
-
-
-
-
-
-
-
-
-
-
U430
Vishay Siliconix

JFET P-CH 25V TO-78

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 12mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
paquet: TO-78-6 Metal Can
Stock4 656
25V
-
12mA @ 10V
-
1V @ 1nA
5pF @ 10V
-
500mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-78-6 Metal Can
TO-78-6
TIS74_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 4nA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5 840
30V
-
20mA @ 15V
-
2V @ 4nA
18pF @ 10V (VGS)
40 Ohm
350mW
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PN4393_D27Z
Fairchild/ON Semiconductor

JFET N-CH 30V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock6 336
30V
-
5mA @ 20V
-
500mV @ 1nA
14pF @ 20V
100 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
J105_D74Z
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 4.5V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 3 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock6 656
25V
-
500mA @ 15V
-
4.5V @ 1µA
-
3 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot J270
Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock849 000
30V
-
2mA @ 15V
-
500mV @ 1nA
-
-
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot J201
Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock162 000
40V
-
200µA @ 20V
-
300mV @ 10nA
-
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PN4117
Fairchild/ON Semiconductor

JFET N-CH 40V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock3 168
40V
-
30µA @ 10V
-
600mV @ 1nA
3pF @ 10V
-
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot KSK595HMTF
Fairchild/ON Semiconductor

JFET N-CH 1MA 100MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock1 260 000
-
-
150µA @ 5V
1mA
600mV @ 1µA
3.5pF @ 5V
-
100mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2SJ01640RA
Panasonic Electronic Components

JFET P-CH 20MA 300MW NS-B1

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
  • Current Drain (Id) - Max: 20mA
  • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 10µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 10V
  • Resistance - RDS(On): 300 Ohm
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: NS-A1
paquet: 3-SIP
Stock5 632
-
-
600µA @ 10V
20mA
1.5V @ 10µA
10pF @ 10V
300 Ohm
300mW
150°C (TJ)
Through Hole
3-SIP
NS-A1
2N4092
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
paquet: TO-206AA, TO-18-3 Metal Can
Stock7 056
40V
40V
15mA @ 20V
-
-
16pF @ 20V
50 Ohm
360mW
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
CMPF5485 TR
Central Semiconductor Corp

JFET N-CH 25V 10MA SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Current Drain (Id) - Max: 30mA
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock4 240
25V
-
4mA @ 15V
30mA
500mV @ 10nA
5pF @ 15V
-
350mW
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BSR57,215
NXP

JFET N-CH 40V 250MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 250mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (TO-236AB)
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 432
40V
40V
20mA @ 15V
-
5V @ 0.5nA
-
40 Ohm
250mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (TO-236AB)
MCH5908H-TL-E
ON Semiconductor

JFET 2N-CH 0.3W MCPH5

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 16mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-SMD, Flat Leads
  • Supplier Device Package: 5-MCPH
paquet: 5-SMD, Flat Leads
Stock7 056
-
-
16mA @ 5V
50mA
300mV @ 100µA
10.5pF @ 5V
-
300mW
150°C (TJ)
Surface Mount
5-SMD, Flat Leads
5-MCPH
NSVJ3910SB3T1G
ON Semiconductor

IC JFET N-CH 25V 50MA 3CPH

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): 25V
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CPH
paquet: TO-236-3, SC-59, SOT-23-3
Stock7 488
25V
25V
20mA @ 5V
50mA
600mV @ 100µA
6pF @ 5V
-
400mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CPH
DSK5J01P0L
Panasonic Electronic Components

JFET N-CH 30MA 150MW SMINI3-F2-B

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 55V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
  • Current Drain (Id) - Max: 30mA
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 10µA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2-B
paquet: SC-85
Stock22 824
-
55V
1mA @ 10V
30mA
5V @ 10µA
6pF @ 10V
-
150mW
150°C (TJ)
Surface Mount
SC-85
SMini3-F2-B
hot MMBFJ177LT1G
ON Semiconductor

JFET P-CH 30V 0.225W SOT23

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
  • Resistance - RDS(On): 300 Ohm
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 783 316
30V
-
1.5mA @ 15V
-
800mV @ 10nA
11pF @ 10V (VGS)
300 Ohm
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
IF170BST3
InterFET

JFET N-Channel -30V Low Noise

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Resistance - RDS(On): 50 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: -
Request a Quote
-
30 V
7 mA @ 10 V
-
800 mV @ 1 nA
15pF @ 10V
50 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
LSK170C-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 40V 10MA SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 10 V
  • Current Drain (Id) - Max: 10 mA
  • Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 135°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: -
Stock15 612
40 V
40 V
10 mA @ 10 V
10 mA
200 mV @ 1 nA
20pF @ 15V
-
400 mW
-55°C ~ 135°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
LSK389D-SOIC-8L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 40V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 17 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300 mV @ 0.1 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: -
Stock13 770
40 V
-
17 mA @ 10 V
-
300 mV @ 0.1 µA
25pF @ 10V
-
400 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
LSK389BSOIC8LTB-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 40V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: -
Stock66
40 V
-
6 mA @ 10 V
-
300 mV @ 100 nA
25pF @ 10V
-
400 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2N4416AUB-TR
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CP226V-2N4393-CT20
Central Semiconductor Corp

JFET N-CH 40V 50MA DIE

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 3 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 1.8 W
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
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40 V
40 V
5 mA @ 3 V
50 mA
500 mV @ 1 nA
20pF @ 20V
100 Ohms
1.8 W
-65°C ~ 175°C (TJ)
Surface Mount
Die
Die
CP232V-2N4416A-WN
Central Semiconductor Corp

JFET N-CH 35V 5MA SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35 V
  • Drain to Source Voltage (Vdss): 35 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
  • Current Drain (Id) - Max: 5 mA
  • Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: -
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35 V
35 V
5 mA @ 15 V
5 mA
2.5 V @ 1 nA
4.5pF @ 15V
-
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NTE326
NTE Electronics, Inc

JFET P-CH 40V TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 310 mW
  • Operating Temperature: -65°C ~ 135°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
paquet: -
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40 V
-
2 mA @ 15 V
-
1 V @ 1 µA
7pF @ 15V
-
310 mW
-65°C ~ 135°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
MQ2N4391UB-TR
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
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-
-
-
-
-
-
-
-
-
-
-
-
CP226V-2N4393-CT
Central Semiconductor Corp

JFET N-CH 40V 50MA DIE

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 3 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 1.8 W
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
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40 V
40 V
5 mA @ 3 V
50 mA
500 mV @ 1 nA
20pF @ 20V
100 Ohms
1.8 W
-65°C ~ 175°C (TJ)
Surface Mount
Die
Die
PN4118-TO-92-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 40V 50MA TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
paquet: -
Stock5 238
40 V
40 V
80 µA @ 10 V
50 mA
1 V @ 1 nA
3pF @ 10V
-
300 mW
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92