Page 9 - Transistors - IGBT - Simples | Produits à semiconducteurs discrets | Heisener Electronics
Contactez nous
SalesDept@heisener.com 86-755-83210559 x831
Connexion/S'inscrire
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Chariot 0

Transistors - IGBT - Simples

Dossiers 4 424
Page  9/158
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGP4263PBF
Infineon Technologies

IGBT 650V 90A 300W TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 192A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
  • Power - Max: 300W
  • Switching Energy: 1.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 70ns/140ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
paquet: TO-247-3
Stock3 472
650V
90A
192A
2.1V @ 15V, 48A
300W
1.7mJ (on), 1mJ (off)
Standard
150nC
70ns/140ns
400V, 48A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
AUIRG4BC30S-S
Infineon Technologies

IGBT 600V 34A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 072
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG7PH46UPBF
Infineon Technologies

IGBT 1200V 130A 469W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 469W
  • Switching Energy: 2.56mJ (on), 1.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 45ns/410ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
paquet: TO-247-3
Stock7 072
1200V
130A
160A
2V @ 15V, 40A
469W
2.56mJ (on), 1.78mJ (off)
Standard
220nC
45ns/410ns
600V, 40A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGI4056DPBF
Infineon Technologies

IGBT 600V 18A 34W TO220FP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 27A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
  • Power - Max: 34W
  • Switching Energy: 59µJ (on), 177µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 34ns/84ns
  • Test Condition: 400V, 9A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
paquet: TO-220-3 Full Pack
Stock15 024
600V
18A
27A
1.65V @ 15V, 9A
34W
59µJ (on), 177µJ (off)
Standard
25nC
34ns/84ns
400V, 9A, 22 Ohm, 15V
72ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IRG4RC20FTRPBF
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock2 400
600V
22A
44A
2.1V @ 15V, 12A
66W
190µJ (on), 920µJ (off)
Standard
27nC
26ns/194ns
480V, 12A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
STGF30NC60S
STMicroelectronics

IGBT 600V 22A 40W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 40W
  • Switching Energy: 300µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 96nC
  • Td (on/off) @ 25°C: 21.5ns/180ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
paquet: TO-220-3 Full Pack
Stock6 288
600V
22A
150A
1.9V @ 15V, 20A
40W
300µJ (on), 1.28mJ (off)
Standard
96nC
21.5ns/180ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
GT50J121(Q)
Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Power - Max: 240W
  • Switching Energy: 1.3mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 90ns/300ns
  • Test Condition: 300V, 50A, 13 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(LH)
paquet: TO-3PL
Stock4 736
600V
50A
100A
2.45V @ 15V, 50A
240W
1.3mJ (on), 1.34mJ (off)
Standard
-
90ns/300ns
300V, 50A, 13 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3PL
TO-3P(LH)
APT30GT60KRG
Microsemi Corporation

IGBT 600V 64A 250W TO220

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 525µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 12ns/225ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 [K]
paquet: TO-220-3
Stock7 408
600V
64A
110A
2.5V @ 15V, 30A
250W
525µJ (on), 600µJ (off)
Standard
145nC
12ns/225ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
ISL9V3036D3S
Fairchild/ON Semiconductor

IGBT 360V 21A 150W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 040
360V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
IXSK35N120AU1
IXYS

IGBT 1200V 70A 300W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 10mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 80ns/400ns
  • Test Condition: 960V, 35A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
paquet: TO-264-3, TO-264AA
Stock2 256
1200V
70A
140A
4V @ 15V, 35A
300W
10mJ (off)
Standard
150nC
80ns/400ns
960V, 35A, 2.7 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264AA(IXSK)
AIKQ100N60CTXKSA1
Infineon Technologies

IC DISCRETE 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 714W
  • Switching Energy: 3.1mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 610nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 400V, 100A, 3.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
paquet: TO-247-3
Stock7 312
600V
160A
400A
2V @ 15V, 100A
714W
3.1mJ (on), 2.5mJ (off)
Standard
610nC
30ns/290ns
400V, 100A, 3.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
AUIRGS30B60KTRL
Infineon Technologies

IGBT 600V 78A 370W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock6 656
600V
78A
120A
2.35V @ 15V, 30A
370W
350µJ (on), 825µJ (off)
Standard
102nC
46ns/185ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXYB82N120C3H1
IXYS

IGBT 1200V 164A 1040W PLUS264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 164A
  • Current - Collector Pulsed (Icm): 320A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
  • Power - Max: 1040W
  • Switching Energy: 4.95mJ (on), 2.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 215nC
  • Td (on/off) @ 25°C: 29ns/192ns
  • Test Condition: 600V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 420ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: PLUS264?
paquet: TO-264-3, TO-264AA
Stock3 856
1200V
164A
320A
3.2V @ 15V, 82A
1040W
4.95mJ (on), 2.78mJ (off)
Standard
215nC
29ns/192ns
600V, 80A, 2 Ohm, 15V
420ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
PLUS264?
IXGK50N120C3H1
IXYS

IGBT 1200V 95A 460W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 95A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
  • Power - Max: 460W
  • Switching Energy: 2mJ (on), 630µJ (off)
  • Input Type: Standard
  • Gate Charge: 196nC
  • Td (on/off) @ 25°C: 31ns/123ns
  • Test Condition: 600V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 75ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
paquet: TO-264-3, TO-264AA
Stock2 896
1200V
95A
240A
4.2V @ 15V, 40A
460W
2mJ (on), 630µJ (off)
Standard
196nC
31ns/123ns
600V, 40A, 2 Ohm, 15V
75ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
hot IHW40N60R
Infineon Technologies

IGBT 600V 80A 305W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
  • Power - Max: 305W
  • Switching Energy: 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 223nC
  • Td (on/off) @ 25°C: -/193ns
  • Test Condition: 400V, 40A, 5.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
paquet: TO-247-3
Stock116 892
600V
80A
120A
2.05V @ 15V, 40A
305W
750µJ (off)
Standard
223nC
-/193ns
400V, 40A, 5.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
AOT5B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 5A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
  • Power - Max: 83W
  • Switching Energy: 80µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 8.5ns/106ns
  • Test Condition: 400V, 5A, 60 Ohm, 15V
  • Reverse Recovery Time (trr): 195ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
paquet: TO-220-3
Stock21 672
650V
10A
15A
1.98V @ 15V, 5A
83W
80µJ (on), 70µJ (off)
Standard
14nC
8.5ns/106ns
400V, 5A, 60 Ohm, 15V
195ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
STGWT30H65FB
STMicroelectronics

IGBT 650V 30A 260W TO3PL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 151µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
paquet: TO-3P-3, SC-65-3
Stock10 776
650V
30A
120A
2V @ 15V, 30A
260W
151µJ (on), 293µJ (off)
Standard
149nC
37ns/146ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IKW30N65WR5XKSA1
Infineon Technologies

IGBT 650V 30A UFAST DIO TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 185W
  • Switching Energy: 990µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 39ns/367ns
  • Test Condition: 400V, 15A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
paquet: TO-247-3
Stock7 476
650V
60A
90A
1.8V @ 15V, 30A
185W
990µJ (on), 330µJ (off)
Standard
155nC
39ns/367ns
400V, 15A, 26 Ohm, 15V
95ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXGP20N120A3
IXYS

IGBT 1200V 40A 180W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 180W
  • Switching Energy: 2.85mJ (on), 6.47mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 16ns/290ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock5 408
1200V
40A
120A
2.5V @ 15V, 20A
180W
2.85mJ (on), 6.47mJ (off)
Standard
50nC
16ns/290ns
960V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
MGP15N60U
onsemi

IGBT, 26A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXA4IF1200TC-TUB
IXYS

IGBT PT 1200V 9A TO268AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 45 W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 12 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 3A, 330Ohm, 15V
  • Reverse Recovery Time (trr): 350 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
paquet: -
Request a Quote
1200 V
9 A
-
2.1V @ 15V, 3A
45 W
400µJ (on), 300µJ (off)
Standard
12 nC
-
600V, 3A, 330Ohm, 15V
350 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
HGTG12N60DID
Harris Corporation

24A, 600V, RUGGED, UFS SERIES N

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ISC119N20NM6ATMA1
Infineon Technologies

IGBT TRENCH 100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGT16NS65DGC9
Rohm Semiconductor

IGBT TRENCH FIELD 650V 16A TO262

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 94 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 13ns/33ns
  • Test Condition: 400V, 8A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262
paquet: -
Stock1 989
650 V
16 A
24 A
2.1V @ 15V, 8A
94 W
-
Standard
21 nC
13ns/33ns
400V, 8A, 10Ohm, 15V
42 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262
IXGT72N60A3-TRL
IXYS

IGBT PT 600V 75A TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
  • Power - Max: 540 W
  • Switching Energy: 1.38mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 230 nC
  • Td (on/off) @ 25°C: 31ns/320ns
  • Test Condition: 480V, 50A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
paquet: -
Request a Quote
600 V
75 A
400 A
1.35V @ 15V, 60A
540 W
1.38mJ (on), 3.5mJ (off)
Standard
230 nC
31ns/320ns
480V, 50A, 3Ohm, 15V
34 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
HGTH20N50EID
Harris Corporation

20A, 500V, N CHANNEL IGBT WITH A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG4BC20SPBFXKMA1
Infineon Technologies

IGBT 600V 19A 60W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 19 A
  • Current - Collector Pulsed (Icm): 38 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
  • Power - Max: 60 W
  • Switching Energy: 120µJ (on), 2.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 27 nC
  • Td (on/off) @ 25°C: 27ns/540ns
  • Test Condition: 480V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: -
Request a Quote
600 V
19 A
38 A
1.6V @ 15V, 10A
60 W
120µJ (on), 2.05mJ (off)
Standard
27 nC
27ns/540ns
480V, 10A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGWA8M120DF3
STMicroelectronics

IGBT TRENCH FS 1200V 16A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 32 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
  • Power - Max: 167 W
  • Switching Energy: 390µJ (on), 370µJ (Off)
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 20ns/126ns
  • Test Condition: 600V, 8A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
paquet: -
Stock1 800
1200 V
16 A
32 A
2.3V @ 15V, 8A
167 W
390µJ (on), 370µJ (Off)
Standard
32 nC
20ns/126ns
600V, 8A, 33Ohm, 15V
103 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads