Page 42 - Transistors - IGBT - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - IGBT - Simples

Dossiers 4 424
Page  42/158
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PH42UD1-EP
Infineon Technologies

IGBT 1200V 85A COPAK247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 313W
  • Switching Energy: 1.21mJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: -/270ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
paquet: TO-247-3
Stock3 312
1200V
85A
200A
2V @ 15V, 30A
313W
1.21mJ (off)
Standard
180nC
-/270ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRGS4615DPBF
Infineon Technologies

IGBT 600V 23A 99W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
  • Power - Max: 99W
  • Switching Energy: 70µJ (on), 145µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 30ns/95ns
  • Test Condition: 400V, 8A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 920
600V
23A
24A
1.85V @ 15V, 8A
99W
70µJ (on), 145µJ (off)
Standard
19nC
30ns/95ns
400V, 8A, 47 Ohm, 15V
60ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4BC20KD-S
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 340µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 54ns/180ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock16 020
600V
16A
32A
2.8V @ 15V, 9A
60W
340µJ (on), 300µJ (off)
Standard
34nC
54ns/180ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGH24N60C4
IXYS

IGBT 600V 56A 190W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 21ns/143ns
  • Test Condition: 360V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
paquet: TO-247-3
Stock6 064
600V
56A
130A
2.7V @ 15V, 24A
190W
400µJ (on), 300µJ (off)
Standard
64nC
21ns/143ns
360V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot APT102GA60B2
Microsemi Corporation

IGBT 600V 183A 780W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 183A
  • Current - Collector Pulsed (Icm): 307A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
  • Power - Max: 780W
  • Switching Energy: 1.354mJ (on), 1.614mJ (off)
  • Input Type: Standard
  • Gate Charge: 294nC
  • Td (on/off) @ 25°C: 28ns/212ns
  • Test Condition: 400V, 62A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
paquet: TO-247-3 Variant
Stock4 640
600V
183A
307A
2.5V @ 15V, 62A
780W
1.354mJ (on), 1.614mJ (off)
Standard
294nC
28ns/212ns
400V, 62A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXGQ180N33TC
IXYS

IGBT 330V 180A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 180A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
paquet: TO-3P-3, SC-65-3
Stock4 816
330V
180A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGR60N60B2
IXYS

IGBT 600V 75A 250W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 250W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 28ns/160ns
  • Test Condition: 400V, 50A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISOPLUS247?
paquet: TO-247-3
Stock5 648
600V
75A
300A
2V @ 15V, 50A
250W
1mJ (off)
Standard
170nC
28ns/160ns
400V, 50A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
ISOPLUS247?
NGB8204NT4
ON Semiconductor

IGBT 430V 18A 115W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock4 656
430V
18A
50A
2.5V @ 4V, 15A
115W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGF3NB60FD
STMicroelectronics

IGBT 600V 6A 25W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 25W
  • Switching Energy: 125µJ (off)
  • Input Type: Standard
  • Gate Charge: 16nC
  • Td (on/off) @ 25°C: 12.5ns/105ns
  • Test Condition: 480V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
paquet: TO-220-3 Full Pack
Stock4 976
600V
6A
24A
2.4V @ 15V, 3A
25W
125µJ (off)
Standard
16nC
12.5ns/105ns
480V, 3A, 10 Ohm, 15V
45ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
hot IRGS15B60KDPBF
Infineon Technologies

IGBT 600V 31A 208W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 92ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock9 600
600V
31A
62A
2.2V @ 15V, 15A
208W
220µJ (on), 340µJ (off)
Standard
56nC
34ns/184ns
400V, 15A, 22 Ohm, 15V
92ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IGP50N60TXKSA1
Infineon Technologies

IGBT 600V 100A 333W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
paquet: TO-220-3
Stock7 776
600V
100A
150A
2V @ 15V, 50A
333W
2.6mJ
Standard
310nC
26ns/299ns
400V, 50A, 7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IGW30N60H3FKSA1
Infineon Technologies

IGBT 600V 60A 187W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.38mJ
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 21ns/207ns
  • Test Condition: 400V, 30A, 10.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
paquet: TO-247-3
Stock5 968
600V
60A
120A
2.4V @ 15V, 30A
187W
1.38mJ
Standard
165nC
21ns/207ns
400V, 30A, 10.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXGK35N120BD1
IXYS

IGBT 1200V 70A 350W TO264AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
  • Power - Max: 350W
  • Switching Energy: 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/180ns
  • Test Condition: 960V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
paquet: TO-264-3, TO-264AA
Stock5 744
1200V
70A
140A
3.3V @ 15V, 35A
350W
3.8mJ (off)
Standard
170nC
50ns/180ns
960V, 35A, 5 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXGA20N120B3
IXYS

IGBT 1200V 36A 180W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
  • Power - Max: 180W
  • Switching Energy: 920µJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 16ns/150ns
  • Test Condition: 600V, 16A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 328
1200V
36A
80A
3.1V @ 15V, 16A
180W
920µJ (on), 560µJ (off)
Standard
51nC
16ns/150ns
600V, 16A, 15 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
AOTF10B60D
Alpha & Omega Semiconductor Inc.

IGBT 600V 20A 42W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
  • Power - Max: 42W
  • Switching Energy: 260µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.4nC
  • Td (on/off) @ 25°C: 10ns/72ns
  • Test Condition: 400V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 105ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220-3F
paquet: TO-220-3 Full Pack
Stock6 496
600V
20A
40A
1.8V @ 15V, 10A
42W
260µJ (on), 70µJ (off)
Standard
17.4nC
10ns/72ns
400V, 10A, 30 Ohm, 15V
105ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220-3F
RJH1CV5DPK-00#T0
Renesas Electronics America

IGBT 1200V 50A 245W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
  • Power - Max: 245W
  • Switching Energy: 1.9mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 72nC
  • Td (on/off) @ 25°C: 42ns/105ns
  • Test Condition: 600V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
paquet: TO-3P-3, SC-65-3
Stock6 828
1200V
50A
-
2.6V @ 15V, 25A
245W
1.9mJ (on), 1.5mJ (off)
Standard
72nC
42ns/105ns
600V, 25A, 5 Ohm, 15V
170ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot IRG4PC30UDPBF
Infineon Technologies

IGBT 600V 23A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 380µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 40ns/91ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
paquet: TO-247-3
Stock20 460
600V
23A
92A
2.1V @ 15V, 12A
100W
380µJ (on), 160µJ (off)
Standard
50nC
40ns/91ns
480V, 12A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGS4056DPBF
Infineon Technologies

IGBT 600V 24A 140W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
  • Power - Max: 140W
  • Switching Energy: 75µJ (on), 225µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 31ns/83ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock13 200
600V
24A
48A
1.85V @ 15V, 12A
140W
75µJ (on), 225µJ (off)
Standard
25nC
31ns/83ns
400V, 12A, 22 Ohm, 15V
68ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
SIGC12T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 10A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
21ns/110ns
300V, 10A, 27Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC14T60SNCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
FGH30T65UPDT-F155
onsemi

IGBT 650V 60A 250W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 250 W
  • Switching Energy: 760µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: 22ns/139ns
  • Test Condition: 400V, 30A, 8Ohm, 15V
  • Reverse Recovery Time (trr): 43 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
paquet: -
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650 V
60 A
90 A
2.3V @ 15V, 30A
250 W
760µJ (on), 400µJ (off)
Standard
155 nC
22ns/139ns
400V, 30A, 8Ohm, 15V
43 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGTH40TS65DGC13
Rohm Semiconductor

IGBT TRENCH FS 650V 40A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 144 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40 nC
  • Td (on/off) @ 25°C: 22ns/73ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
paquet: -
Stock1 800
650 V
40 A
80 A
2.1V @ 15V, 20A
144 W
-
Standard
40 nC
22ns/73ns
400V, 20A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
SIGC39T60EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 75A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
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600 V
75 A
225 A
1.85V @ 15V, 75A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC54T60R3EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
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600 V
100 A
300 A
1.85V @ 15V, 100A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXYH40N120B4
IXYS

IGBT DISCRETE TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 136 A
  • Current - Collector Pulsed (Icm): 250 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
  • Power - Max: 680 W
  • Switching Energy: 5.9mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 19ns/220ns
  • Test Condition: 960V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 53 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
paquet: -
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1200 V
136 A
250 A
2.1V @ 15V, 32A
680 W
5.9mJ (on), 2.9mJ (off)
Standard
94 nC
19ns/220ns
960V, 32A, 5Ohm, 15V
53 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
MGF65A6L
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/60

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 60A
  • Power - Max: 405 W
  • Switching Energy: 1.7mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 50ns/130ns
  • Test Condition: 400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P-3L
paquet: -
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650 V
80 A
180 A
1.96V @ 15V, 60A
405 W
1.7mJ (on), 1.4mJ (off)
Standard
110 nC
50ns/130ns
400V, 60A, 10Ohm, 15V
65 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P-3L
SIGC76T60R3EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 150A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
150 A
450 A
1.9V @ 15V, 150A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXXX200N60B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 380 A
  • Current - Collector Pulsed (Icm): 900 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
  • Power - Max: 1630 W
  • Switching Energy: 2.85mJ (on), 4.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 315 nC
  • Td (on/off) @ 25°C: 48ns/160ns
  • Test Condition: 360V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
paquet: -
Stock75
600 V
380 A
900 A
1.7V @ 15V, 100A
1630 W
2.85mJ (on), 4.4mJ (off)
Standard
315 nC
48ns/160ns
360V, 100A, 1Ohm, 15V
100 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3