Page 18 - Transistors - IGBT - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - IGBT - Simples

Dossiers 4 424
Page  18/158
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGP4630DPBF
Infineon Technologies

IGBT 600V 47A 206W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 47A
  • Current - Collector Pulsed (Icm): 54A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
  • Power - Max: 206W
  • Switching Energy: 95µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 40ns/105ns
  • Test Condition: 400V, 18A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
paquet: TO-247-3
Stock6 912
600V
47A
54A
1.95V @ 15V, 18A
206W
95µJ (on), 350µJ (off)
Standard
35nC
40ns/105ns
400V, 18A, 22 Ohm, 15V
100ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4BC10SPBF
Infineon Technologies

IGBT 600V 14A 38W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 25ns/630ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock86 220
600V
14A
18A
1.8V @ 15V, 8A
38W
140µJ (on), 2.58mJ (off)
Standard
15nC
25ns/630ns
480V, 8A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot NGTB40N120FLWG
ON Semiconductor

IGBT 1200V 40A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 260W
  • Switching Energy: 2.6mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 415nC
  • Td (on/off) @ 25°C: 130ns/385ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: TO-247-3
Stock6 080
1200V
80A
160A
2.2V @ 15V, 40A
260W
2.6mJ (on), 1.6mJ (off)
Standard
415nC
130ns/385ns
600V, 40A, 10 Ohm, 15V
200ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXXK160N65C4
IXYS

IGBT 650V 290A 940W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 290A
  • Current - Collector Pulsed (Icm): 800A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
  • Power - Max: 940W
  • Switching Energy: 3.5mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 422nC
  • Td (on/off) @ 25°C: 52ns/197ns
  • Test Condition: 400V, 80A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXXK)
paquet: TO-264-3, TO-264AA
Stock2 624
650V
290A
800A
2.1V @ 15V, 160A
940W
3.5mJ (on), 1.3mJ (off)
Standard
422nC
52ns/197ns
400V, 80A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXXK)
IXBT32N300
IXYS

IGBT 3000V 80A 400W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
  • Power - Max: 400W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock2 480
3000V
80A
280A
3.2V @ 15V, 32A
400W
-
Standard
142nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
FGPF70N30TDTU
Fairchild/ON Semiconductor

IGBT 300V 49.2W TO220F

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A
  • Power - Max: 49.2W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
paquet: TO-220-3 Full Pack
Stock3 888
300V
-
160A
1.5V @ 15V, 20A
49.2W
-
Standard
125nC
-
-
21ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
IXGH50N60C2
IXYS

IGBT 600V 75A 400W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 400W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 138nC
  • Td (on/off) @ 25°C: 18ns/115ns
  • Test Condition: 480V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
paquet: TO-247-3
Stock7 392
600V
75A
300A
2.7V @ 15V, 40A
400W
380µJ (off)
Standard
138nC
18ns/115ns
480V, 40A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IGP10N60TXKSA1
Infineon Technologies

IGBT 600V 20A 110W TO220-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
  • Power - Max: 110W
  • Switching Energy: 430µJ
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 12ns/215ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
paquet: TO-220-3
Stock4 368
600V
20A
30A
2.05V @ 15V, 10A
110W
430µJ
Standard
62nC
12ns/215ns
400V, 10A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
AIHD10N60RATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 210µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3 792
600V
20A
30A
2.1V @ 15V, 10A
150W
210µJ (on), 380µJ (off)
Standard
64nC
14ns/192ns
400V, 10A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXDH35N60BD1
IXYS

IGBT 600V 60A 250W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 70A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
  • Power - Max: 250W
  • Switching Energy: 1.6mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD (IXDH)
paquet: TO-3P-3 Full Pack
Stock3 312
600V
60A
70A
2.7V @ 15V, 35A
250W
1.6mJ (on), 800µJ (off)
Standard
120nC
-
300V, 35A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-247AD (IXDH)
hot IXGH30N60C3D1
IXYS

IGBT 600V 60A 220W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 270µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 16ns/42ns
  • Test Condition: 300V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
paquet: TO-247-3
Stock419 796
600V
60A
150A
3V @ 15V, 20A
220W
270µJ (on), 90µJ (off)
Standard
38nC
16ns/42ns
300V, 20A, 5 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
APT15GT60BRDQ1G
Microsemi Corporation

IGBT 600V 42A 184W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 184W
  • Switching Energy: 150µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 6ns/105ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock6 352
600V
42A
45A
2.5V @ 15V, 15A
184W
150µJ (on), 215µJ (off)
Standard
75nC
6ns/105ns
400V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot FGAF40N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 100W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 100W
  • Switching Energy: 470µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
paquet: SC-94
Stock17 292
600V
40A
160A
3V @ 15V, 20A
100W
470µJ (on), 130µJ (off)
Standard
77nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
95ns
-55°C ~ 150°C (TJ)
Through Hole
SC-94
TO-3PF
hot HGT1S10N120BNS
Fairchild/ON Semiconductor

IGBT 1200V 35A 298W TO263AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 298W
  • Switching Energy: 320µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/165ns
  • Test Condition: 960V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock20 628
1200V
35A
80A
2.7V @ 15V, 10A
298W
320µJ (on), 800µJ (off)
Standard
100nC
23ns/165ns
960V, 10A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot HGTP12N60A4D
Fairchild/ON Semiconductor

IGBT 600V 54A 167W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 17ns/96ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock12 780
600V
54A
96A
2.7V @ 15V, 12A
167W
55µJ (on), 50µJ (off)
Standard
78nC
17ns/96ns
390V, 12A, 10 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGB20M65DF2
STMicroelectronics

IGBT TRENCH 650V 40A D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 166W
  • Switching Energy: 140µJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 26ns/108ns
  • Test Condition: 400V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 166ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 256
650V
40A
80A
2V @ 15V, 20A
166W
140µJ (on), 560µJ (off)
Standard
63nC
26ns/108ns
400V, 20A, 12 Ohm, 15V
166ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGF7H60DF
STMicroelectronics

IGBT 600V 14A 24W TO-220FP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 28A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
  • Power - Max: 24W
  • Switching Energy: 99µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 30ns/160ns
  • Test Condition: 400V, 7A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 136ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
paquet: TO-220-3 Full Pack
Stock7 392
600V
14A
28A
1.95V @ 15V, 7A
24W
99µJ (on), 100µJ (off)
Standard
46nC
30ns/160ns
400V, 7A, 47 Ohm, 15V
136ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
STGB15H60DF
STMicroelectronics

IGBT 600V 30A 115W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 115W
  • Switching Energy: 136µJ (on), 207µJ (off)
  • Input Type: Standard
  • Gate Charge: 81nC
  • Td (on/off) @ 25°C: 24.5ns/118ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 103ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock4 480
600V
30A
60A
2V @ 15V, 15A
115W
136µJ (on), 207µJ (off)
Standard
81nC
24.5ns/118ns
400V, 15A, 10 Ohm, 15V
103ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
APT102GA60L
Microsemi Corporation

IGBT 600V 183A 780W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 183A
  • Current - Collector Pulsed (Icm): 307A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
  • Power - Max: 780W
  • Switching Energy: 1.354mJ (on), 1.614mJ (off)
  • Input Type: Standard
  • Gate Charge: 294nC
  • Td (on/off) @ 25°C: 28ns/212ns
  • Test Condition: 400V, 62A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
paquet: TO-264-3, TO-264AA
Stock5 040
600V
183A
307A
2.5V @ 15V, 62A
780W
1.354mJ (on), 1.614mJ (off)
Standard
294nC
28ns/212ns
400V, 62A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
IXBF32N300
IXYS

IGBT 3000V 40A 160W ISOPLUSI4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
paquet: i4-Pac?-5 (3 leads)
Stock4 848
3000V
40A
250A
3.2V @ 15V, 32A
160W
-
Standard
142nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
hot STGW40NC60V
STMicroelectronics

IGBT 600V 80A 260W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 260W
  • Switching Energy: 330µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 214nC
  • Td (on/off) @ 25°C: 43ns/140ns
  • Test Condition: 390V, 40A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
paquet: TO-247-3
Stock89 352
600V
80A
200A
2.5V @ 15V, 40A
260W
330µJ (on), 720µJ (off)
Standard
214nC
43ns/140ns
390V, 40A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRG4IBC30KDPBF
Infineon Technologies

IGBT 600V 17A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 45W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
paquet: TO-220-3 Full Pack
Stock54 000
600V
17A
34A
2.7V @ 15V, 16A
45W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
SIGC12T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 29ns/266ns
  • Test Condition: 400V, 10A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
29ns/266ns
400V, 10A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
LGB8207BTH
Littelfuse Inc.

IGBT 365V 20A 165W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AUIRG4PH50S-205
Infineon Technologies

IGBT 1200V TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 141 A
  • Current - Collector Pulsed (Icm): 99 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
  • Power - Max: 543 W
  • Switching Energy: 16mJ (off)
  • Input Type: Standard
  • Gate Charge: 227 nC
  • Td (on/off) @ 25°C: -/616ns
  • Test Condition: 600V, 33A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
paquet: -
Request a Quote
1200 V
141 A
99 A
1.7V @ 15V, 33A
543 W
16mJ (off)
Standard
227 nC
-/616ns
600V, 33A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
FGBS3040E1-SN00390
Fairchild Semiconductor

FGBS3040 - SMART IGN-IGBT TO263-

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NGTD13T120F2SWK
onsemi

IGBT TRENCH FIELD ST 1200V WAFER

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
paquet: -
Request a Quote
1200 V
-
60 A
2.4V @ 15V, 15A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Wafer
AOK20B120E2
Alpha & Omega Semiconductor Inc.

IGBT 1200V 20A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 250 W
  • Switching Energy: 820µJ (off)
  • Input Type: Standard
  • Gate Charge: 53.5 nC
  • Td (on/off) @ 25°C: -/123ns
  • Test Condition: 600V, 20A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: -
Request a Quote
1200 V
40 A
80 A
2.2V @ 15V, 20A
250 W
820µJ (off)
Standard
53.5 nC
-/123ns
600V, 20A, 15Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247