Page 121 - Transistors - IGBT - Simples | Produits à semiconducteurs discrets

IRGS4620DPBF

Infineon Technologies

IGBT 600V 32A 140W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 32A
Current - Collector Pulsed (Icm): 36A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Power - Max: 140W
Switching Energy: 75µJ (on), 225µJ (off)
Input Type: Standard
Gate Charge: 25nC
Td (on/off) @ 25°C: 31ns/83ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Reverse Recovery Time (trr): 68ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5 808

600V

32A

36A

1.85V @ 15V, 12A

140W

75µJ (on), 225µJ (off)

Standard

25nC

31ns/83ns

400V, 12A, 22 Ohm, 15V

68ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IRGP4266-EPBF

Infineon Technologies

IGBT 650V 140A 450W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 450W
Switching Energy: 3.2mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 80ns/200ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

paquet: TO-247-3

Stock2 960

650V

140A

300A

2.1V @ 15V, 75A

450W

3.2mJ (on), 1.7mJ (off)

Standard

210nC

80ns/200ns

400V, 75A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AD

IRGI4045DPBF

Infineon Technologies

IGBT 600V 11A 33W TO220ABFP

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Power - Max: 33W
Switching Energy: 64µJ (on), 123µJ (off)
Input Type: Standard
Gate Charge: 13nC
Td (on/off) @ 25°C: 26ns/73ns
Test Condition: 400V, 6A, 47 Ohm, 15V
Reverse Recovery Time (trr): 73ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

paquet: TO-220-3 Full Pack

Stock15 012

600V

11A

18A

2V @ 15V, 6A

33W

64µJ (on), 123µJ (off)

Standard

13nC

26ns/73ns

400V, 6A, 47 Ohm, 15V

73ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220AB Full-Pak

IXGQ50N60C4D1

IXYS

IGBT 600V 90A 300W TO3P

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 220A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Power - Max: 300W
Switching Energy: 950µJ (on), 840µJ (off)
Input Type: Standard
Gate Charge: 113nC
Td (on/off) @ 25°C: 40ns/270ns
Test Condition: 400V, 36A, 10 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

paquet: TO-3P-3, SC-65-3

Stock7 408

600V

90A

220A

2.3V @ 15V, 36A

300W

950µJ (on), 840µJ (off)

Standard

113nC

40ns/270ns

400V, 36A, 10 Ohm, 15V

25ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

IXSR50N60B

IXYS

IGBT 600V ISOPLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

paquet: ISOPLUS247?

Stock7 152

600V

-

Standard

-

Through Hole

ISOPLUS247?

IXGT24N60CD1

IXYS

IGBT 600V 48A 150W TO268

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Power - Max: 150W
Switching Energy: 240µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 15ns/75ns
Test Condition: 480V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4 000

600V

48A

80A

2.5V @ 15V, 24A

150W

240µJ (off)

Standard

55nC

15ns/75ns

480V, 24A, 10 Ohm, 15V

25ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

GT10J312(Q)

Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 20A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Power - Max: 60W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 400ns/400ns
Test Condition: 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-220SM

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 992

600V

10A

20A

2.7V @ 15V, 10A

60W

-

Standard

-

400ns/400ns

300V, 10A, 100 Ohm, 15V

200ns

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-220SM

APT13GP120KG

Microsemi Corporation

IGBT 1200V 41A 250W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 41A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Power - Max: 250W
Switching Energy: 114µJ (on), 165µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 9ns/28ns
Test Condition: 600V, 13A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]

paquet: TO-220-3

Stock3 264

1200V

41A

50A

3.9V @ 15V, 13A

250W

114µJ (on), 165µJ (off)

Standard

55nC

9ns/28ns

600V, 13A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220 [K]

IKQ50N120CH3XKSA1

Infineon Technologies

IGBT HS SW 1200V 50A TO-247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Power - Max: 652W
Switching Energy: 3mJ (on), 1.9mJ (off)
Input Type: Standard
Gate Charge: 235nC
Td (on/off) @ 25°C: 34ns/297ns
Test Condition: 600V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-46

paquet: TO-247-3

Stock5 584

1200V

100A

200A

2.35V @ 15V, 50A

652W

3mJ (on), 1.9mJ (off)

Standard

235nC

34ns/297ns

600V, 50A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-46

IXBF20N300

IXYS

IGBT 3000V 34A 150W ISOPLUSI4

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 34A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Power - Max: 150W
Switching Energy: -
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.35µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

paquet: i4-Pac?-5 (3 leads)

Stock3 712

3000V

34A

150A

3.2V @ 15V, 20A

150W

-

Standard

105nC

-

1.35µs

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5 (3 leads)

ISOPLUS i4-PAC?

IXGX32N170AH1

IXYS

IGBT 1700V 32A 350W PLUS247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 32A
Current - Collector Pulsed (Icm): 110A
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Power - Max: 350W
Switching Energy: 4.1mJ (on), 1.25mJ (off)
Input Type: Standard
Gate Charge: 157nC
Td (on/off) @ 25°C: 27ns/270ns
Test Condition: 850V, 32A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

paquet: TO-247-3

Stock4 448

1700V

32A

110A

5V @ 15V, 21A

350W

4.1mJ (on), 1.25mJ (off)

Standard

157nC

27ns/270ns

850V, 32A, 2.7 Ohm, 15V

150ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PLUS247?-3

IXGR40N120B2D1

IXYS

IGBT 1200V ISOPLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

paquet: ISOPLUS247?

Stock4 240

1200V

-

Standard

-

Through Hole

ISOPLUS247?

IXGP30N60C3D4

IXYS

IGBT 600V 60A 220W TO220AB

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Power - Max: 220W
Switching Energy: 270µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 38nC
Td (on/off) @ 25°C: 16ns/42ns
Test Condition: 300V, 20A, 5 Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

paquet: TO-220-3

Stock3 712

600V

60A

150A

3V @ 15V, 20A

220W

270µJ (on), 90µJ (off)

Standard

38nC

16ns/42ns

300V, 20A, 5 Ohm, 15V

60ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGQ170N30PB

IXYS

IGBT 300V 170A 330W TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 170A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 85A
Power - Max: 330W
Switching Energy: -
Input Type: Standard
Gate Charge: 143nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

paquet: TO-3P-3, SC-65-3

Stock4 080

300V

170A

-

1.7V @ 15V, 85A

330W

-

Standard

143nC

-

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

IKW20N60H3FKSA1

Infineon Technologies

IGBT 600V 40A 170W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Power - Max: 170W
Switching Energy: 800µJ
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 17ns/194ns
Test Condition: 400V, 20A, 14.6 Ohm, 15V
Reverse Recovery Time (trr): 112ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

paquet: TO-247-3

Stock4 704

600V

40A

80A

2.4V @ 15V, 20A

170W

800µJ

Standard

120nC

17ns/194ns

400V, 20A, 14.6 Ohm, 15V

112ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

FGH20N60UFDTU

Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO247

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Power - Max: 165W
Switching Energy: 380µJ (on), 260µJ (off)
Input Type: Standard
Gate Charge: 63nC
Td (on/off) @ 25°C: 13ns/87ns
Test Condition: 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): 34ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

paquet: TO-247-3

Stock151 332

600V

40A

60A

2.4V @ 15V, 20A

165W

380µJ (on), 260µJ (off)

Standard

63nC

13ns/87ns

400V, 20A, 10 Ohm, 15V

34ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

IKQ100N60TXKSA1

Infineon Technologies

IGBT 600V TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 400A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Power - Max: 714W
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Input Type: Standard
Gate Charge: 610nC
Td (on/off) @ 25°C: 30ns/290ns
Test Condition: 400V, 100A, 3.6 Ohm, 15V
Reverse Recovery Time (trr): 230ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-46

paquet: TO-247-3

Stock7 224

600V

160A

400A

2V @ 15V, 100A

714W

3.1mJ (on), 2.5mJ (off)

Standard

610nC

30ns/290ns

400V, 100A, 3.6 Ohm, 15V

230ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-46

IHW20N135R5XKSA1

Infineon Technologies

IGBT 1350V 40A 288W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1350V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
Power - Max: 288W
Switching Energy: 950µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: -/235ns
Test Condition: 600V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

paquet: TO-247-3

Stock7 884

1350V

40A

60A

1.85V @ 15V, 20A

288W

950µJ (off)

Standard

170nC

-/235ns

600V, 20A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

STGW35HF60W

STMicroelectronics

IGBT 600V 60A 200W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 200W
Switching Energy: 290µJ (on), 185µJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 30ns/175ns
Test Condition: 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

paquet: TO-247-3

Stock390 000

600V

60A

150A

2.5V @ 15V, 20A

200W

290µJ (on), 185µJ (off)

Standard

140nC

30ns/175ns

400V, 20A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PCFG75T65SQF

onsemi

IGBT FIELD STOP 650V WAFER

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 128 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

paquet: -

Request a Quote

650 V

-

300 A

2.1V @ 15V, 75A

-

Standard

128 nC

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

Wafer

SIGC81T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

paquet: -

Request a Quote

600 V

100 A

300 A

2.5V @ 15V, 100A

-

Standard

-

65ns/450ns

400V, 100A, 3.3Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SGF80N60UFTU-ON

onsemi

IGBT, 80A, 600V, N-CHANNEL

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

RJP3047DPK-80-T2

Renesas Electronics Corporation

HIGH SPEED IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

AIKW75N60CTE8188XKSA1

Infineon Technologies

IGBT 600V TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 428 W
Switching Energy: 2mJ (on), 2.5mJ (off)
Input Type: Standard
Gate Charge: 470 nC
Td (on/off) @ 25°C: 33ns/330ns
Test Condition: 400V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr): 121 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-41

paquet: -

Request a Quote

600 V

80 A

225 A

2V @ 15V, 75A

428 W

2mJ (on), 2.5mJ (off)

Standard

470 nC

33ns/330ns

400V, 75A, 5Ohm, 15V

121 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-41

IKWH30N65WR5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 75A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 190 W
Switching Energy: 870µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 133 nC
Td (on/off) @ 25°C: 41ns/398ns
Test Condition: 400V, 30A, 27Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

paquet: -

Stock504

650 V

75 A

90 A

1.7V @ 15V, 30A

190 W

870µJ (on), 400µJ (off)

Standard

133 nC

41ns/398ns

400V, 30A, 27Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

FGD3040G2-SN00353

onsemi

IGBT 400V 41A TO252

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 41 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Power - Max: 150 W
Switching Energy: -
Input Type: Logic
Gate Charge: 21 nC
Td (on/off) @ 25°C: -/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Reverse Recovery Time (trr): 1.9 µs
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)

paquet: -

Request a Quote

400 V

41 A

-

1.25V @ 4V, 6A

150 W

-

Logic

21 nC

-/4.8µs

300V, 6.5A, 1kOhm, 5V

1.9 µs

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

STGW40H65DFB-4

STMicroelectronics

IGBT

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 283 W
Switching Energy: 200µJ (on), 410µJ (off)
Input Type: Standard
Gate Charge: 210 nC
Td (on/off) @ 25°C: 40ns/142ns
Test Condition: 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 62 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4

paquet: -

Stock1 800

650 V

80 A

160 A

2V @ 15V, 40A

283 W

200µJ (on), 410µJ (off)

Standard

210 nC

40ns/142ns

400V, 40A, 5Ohm, 15V

62 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-4

RJH3047DPK-80-T2

Renesas Electronics Corporation

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

Référence	Fabricant	Description	paquet	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGS4620DPBF	Infineon Technologies	IGBT 600V 32A 140W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 75µJ (on), 225µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5 808	600V	32A	36A	1.85V @ 15V, 12A	140W	75µJ (on), 225µJ (off)	Standard	25nC	31ns/83ns	400V, 12A, 22 Ohm, 15V	68ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRGP4266-EPBF	Infineon Technologies	IGBT 650V 140A 450W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 450W Switching Energy: 3.2mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 80ns/200ns Test Condition: 400V, 75A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	paquet: TO-247-3	Stock2 960	650V	140A	300A	2.1V @ 15V, 75A	450W	3.2mJ (on), 1.7mJ (off)	Standard	210nC	80ns/200ns	400V, 75A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRGI4045DPBF	Infineon Technologies	IGBT 600V 11A 33W TO220ABFP IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 33W Switching Energy: 64µJ (on), 123µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 26ns/73ns Test Condition: 400V, 6A, 47 Ohm, 15V Reverse Recovery Time (trr): 73ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	paquet: TO-220-3 Full Pack	Stock15 012	600V	11A	18A	2V @ 15V, 6A	33W	64µJ (on), 123µJ (off)	Standard	13nC	26ns/73ns	400V, 6A, 47 Ohm, 15V	73ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
IXGQ50N60C4D1	IXYS	IGBT 600V 90A 300W TO3P IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A Power - Max: 300W Switching Energy: 950µJ (on), 840µJ (off) Input Type: Standard Gate Charge: 113nC Td (on/off) @ 25°C: 40ns/270ns Test Condition: 400V, 36A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	paquet: TO-3P-3, SC-65-3	Stock7 408	600V	90A	220A	2.3V @ 15V, 36A	300W	950µJ (on), 840µJ (off)	Standard	113nC	40ns/270ns	400V, 36A, 10 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
IXSR50N60B	IXYS	IGBT 600V ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	paquet: ISOPLUS247?	Stock7 152	600V	-	-	-	-	-	Standard	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
IXGT24N60CD1	IXYS	IGBT 600V 48A 150W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Power - Max: 150W Switching Energy: 240µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 15ns/75ns Test Condition: 480V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4 000	600V	48A	80A	2.5V @ 15V, 24A	150W	240µJ (off)	Standard	55nC	15ns/75ns	480V, 24A, 10 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
GT10J312(Q)	Toshiba Semiconductor and Storage	IGBT 600V 10A 60W TO220SM IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 60W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 400ns/400ns Test Condition: 300V, 10A, 100 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-220SM	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 992	600V	10A	20A	2.7V @ 15V, 10A	60W	-	Standard	-	400ns/400ns	300V, 10A, 100 Ohm, 15V	200ns	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-220SM
APT13GP120KG	Microsemi Corporation	IGBT 1200V 41A 250W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Power - Max: 250W Switching Energy: 114µJ (on), 165µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 9ns/28ns Test Condition: 600V, 13A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	paquet: TO-220-3	Stock3 264	1200V	41A	50A	3.9V @ 15V, 13A	250W	114µJ (on), 165µJ (off)	Standard	55nC	9ns/28ns	600V, 13A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
IKQ50N120CH3XKSA1	Infineon Technologies	IGBT HS SW 1200V 50A TO-247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A Power - Max: 652W Switching Energy: 3mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 34ns/297ns Test Condition: 600V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	paquet: TO-247-3	Stock5 584	1200V	100A	200A	2.35V @ 15V, 50A	652W	3mJ (on), 1.9mJ (off)	Standard	235nC	34ns/297ns	600V, 50A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-46
IXBF20N300	IXYS	IGBT 3000V 34A 150W ISOPLUSI4 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A Power - Max: 150W Switching Energy: - Input Type: Standard Gate Charge: 105nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.35µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	paquet: i4-Pac?-5 (3 leads)	Stock3 712	3000V	34A	150A	3.2V @ 15V, 20A	150W	-	Standard	105nC	-	-	1.35µs	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5 (3 leads)	ISOPLUS i4-PAC?
IXGX32N170AH1	IXYS	IGBT 1700V 32A 350W PLUS247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A Power - Max: 350W Switching Energy: 4.1mJ (on), 1.25mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 27ns/270ns Test Condition: 850V, 32A, 2.7 Ohm, 15V Reverse Recovery Time (trr): 150ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	paquet: TO-247-3	Stock4 448	1700V	32A	110A	5V @ 15V, 21A	350W	4.1mJ (on), 1.25mJ (off)	Standard	157nC	27ns/270ns	850V, 32A, 2.7 Ohm, 15V	150ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
IXGR40N120B2D1	IXYS	IGBT 1200V ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	paquet: ISOPLUS247?	Stock4 240	1200V	-	-	-	-	-	Standard	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
IXGP30N60C3D4	IXYS	IGBT 600V 60A 220W TO220AB IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 220W Switching Energy: 270µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 38nC Td (on/off) @ 25°C: 16ns/42ns Test Condition: 300V, 20A, 5 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	paquet: TO-220-3	Stock3 712	600V	60A	150A	3V @ 15V, 20A	220W	270µJ (on), 90µJ (off)	Standard	38nC	16ns/42ns	300V, 20A, 5 Ohm, 15V	60ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGQ170N30PB	IXYS	IGBT 300V 170A 330W TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 170A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 85A Power - Max: 330W Switching Energy: - Input Type: Standard Gate Charge: 143nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	paquet: TO-3P-3, SC-65-3	Stock4 080	300V	170A	-	1.7V @ 15V, 85A	330W	-	Standard	143nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
IKW20N60H3FKSA1	Infineon Technologies	IGBT 600V 40A 170W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 170W Switching Energy: 800µJ Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 17ns/194ns Test Condition: 400V, 20A, 14.6 Ohm, 15V Reverse Recovery Time (trr): 112ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	paquet: TO-247-3	Stock4 704	600V	40A	80A	2.4V @ 15V, 20A	170W	800µJ	Standard	120nC	17ns/194ns	400V, 20A, 14.6 Ohm, 15V	112ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
FGH20N60UFDTU	Fairchild/ON Semiconductor	IGBT 600V 40A 165W TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 165W Switching Energy: 380µJ (on), 260µJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 13ns/87ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 34ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	paquet: TO-247-3	Stock151 332	600V	40A	60A	2.4V @ 15V, 20A	165W	380µJ (on), 260µJ (off)	Standard	63nC	13ns/87ns	400V, 20A, 10 Ohm, 15V	34ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IKQ100N60TXKSA1	Infineon Technologies	IGBT 600V TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: 714W Switching Energy: 3.1mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 610nC Td (on/off) @ 25°C: 30ns/290ns Test Condition: 400V, 100A, 3.6 Ohm, 15V Reverse Recovery Time (trr): 230ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	paquet: TO-247-3	Stock7 224	600V	160A	400A	2V @ 15V, 100A	714W	3.1mJ (on), 2.5mJ (off)	Standard	610nC	30ns/290ns	400V, 100A, 3.6 Ohm, 15V	230ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-46
IHW20N135R5XKSA1	Infineon Technologies	IGBT 1350V 40A 288W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A Power - Max: 288W Switching Energy: 950µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: -/235ns Test Condition: 600V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	paquet: TO-247-3	Stock7 884	1350V	40A	60A	1.85V @ 15V, 20A	288W	950µJ (off)	Standard	170nC	-/235ns	600V, 20A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
STGW35HF60W	STMicroelectronics	IGBT 600V 60A 200W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 200W Switching Energy: 290µJ (on), 185µJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 30ns/175ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	paquet: TO-247-3	Stock390 000	600V	60A	150A	2.5V @ 15V, 20A	200W	290µJ (on), 185µJ (off)	Standard	140nC	30ns/175ns	400V, 20A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
PCFG75T65SQF	onsemi	IGBT FIELD STOP 650V WAFER IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 128 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	paquet: -	Request a Quote	650 V	-	300 A	2.1V @ 15V, 75A	-	-	Standard	128 nC	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Wafer
SIGC81T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 65ns/450ns Test Condition: 400V, 100A, 3.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	paquet: -	Request a Quote	600 V	100 A	300 A	2.5V @ 15V, 100A	-	-	Standard	-	65ns/450ns	400V, 100A, 3.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SGF80N60UFTU-ON	onsemi	IGBT, 80A, 600V, N-CHANNEL IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJP3047DPK-80-T2	Renesas Electronics Corporation	HIGH SPEED IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIKW75N60CTE8188XKSA1	Infineon Technologies	IGBT 600V TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 428 W Switching Energy: 2mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 470 nC Td (on/off) @ 25°C: 33ns/330ns Test Condition: 400V, 75A, 5Ohm, 15V Reverse Recovery Time (trr): 121 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-41	paquet: -	Request a Quote	600 V	80 A	225 A	2V @ 15V, 75A	428 W	2mJ (on), 2.5mJ (off)	Standard	470 nC	33ns/330ns	400V, 75A, 5Ohm, 15V	121 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-41
IKWH30N65WR5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 75A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 190 W Switching Energy: 870µJ (on), 400µJ (off) Input Type: Standard Gate Charge: 133 nC Td (on/off) @ 25°C: 41ns/398ns Test Condition: 400V, 30A, 27Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	paquet: -	Stock504	650 V	75 A	90 A	1.7V @ 15V, 30A	190 W	870µJ (on), 400µJ (off)	Standard	133 nC	41ns/398ns	400V, 30A, 27Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
FGD3040G2-SN00353	onsemi	IGBT 400V 41A TO252 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 41 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 21 nC Td (on/off) @ 25°C: -/4.8µs Test Condition: 300V, 6.5A, 1kOhm, 5V Reverse Recovery Time (trr): 1.9 µs Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	paquet: -	Request a Quote	400 V	41 A	-	1.25V @ 4V, 6A	150 W	-	Logic	21 nC	-/4.8µs	300V, 6.5A, 1kOhm, 5V	1.9 µs	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
STGW40H65DFB-4	STMicroelectronics	IGBT IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 283 W Switching Energy: 200µJ (on), 410µJ (off) Input Type: Standard Gate Charge: 210 nC Td (on/off) @ 25°C: 40ns/142ns Test Condition: 400V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 62 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4	paquet: -	Stock1 800	650 V	80 A	160 A	2V @ 15V, 40A	283 W	200µJ (on), 410µJ (off)	Standard	210 nC	40ns/142ns	400V, 40A, 5Ohm, 15V	62 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
RJH3047DPK-80-T2	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-