Page 873 - Transistors - FET, MOSFET - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  873/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AUIRF3315S
Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock6 256
MOSFET (Metal Oxide)
150V
21A (Tc)
10V
4V @ 250µA
95nC @ 10V
1300pF @ 25V
±20V
-
3.8W (Ta), 94W (Tc)
82 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC240N12NS3 G
Infineon Technologies

MOSFET N-CH 120V 37A 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 60V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock7 520
MOSFET (Metal Oxide)
120V
37A (Tc)
10V
4V @ 35µA
27nC @ 10V
1900pF @ 60V
±20V
-
66W (Tc)
24 mOhm @ 31A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
IRL3202STRR
Infineon Technologies

MOSFET N-CH 20V 48A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 29A, 7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 320
MOSFET (Metal Oxide)
20V
48A (Tc)
4.5V, 7V
700mV @ 250µA
43nC @ 4.5V
2000pF @ 15V
±10V
-
69W (Tc)
16 mOhm @ 29A, 7V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOD446_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V TO-252

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7 648
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI4104DY-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 4.6A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock62 652
MOSFET (Metal Oxide)
100V
4.6A (Tc)
10V
4.5V @ 250µA
13nC @ 10V
446pF @ 50V
±20V
-
2.5W (Ta), 5W (Tc)
105 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
PHB23NQ10LT,118
NXP

MOSFET N-CH 100V 23A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1704pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 98W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock6 448
MOSFET (Metal Oxide)
100V
23A (Tc)
5V, 10V
2V @ 1mA
49nC @ 10V
1704pF @ 25V
±15V
-
98W (Tc)
72 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
VN2222LLRLRA
ON Semiconductor

MOSFET N-CH 60V 150MA TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock4 000
MOSFET (Metal Oxide)
60V
150mA (Ta)
10V
2.5V @ 1mA
-
60pF @ 25V
±20V
-
400mW (Ta)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot MTD6P10E
ON Semiconductor

MOSFET P-CH 100V 6A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 660 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock53 280
MOSFET (Metal Oxide)
100V
6A (Tc)
10V
4V @ 250µA
22nC @ 10V
840pF @ 25V
±15V
-
1.75W (Ta), 50W (Tc)
660 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
SIPC30N60C3X1SA2
Infineon Technologies

TRANSISTOR N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Stock6 432
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IRFS59N10DTRLP
Infineon Technologies

MOSFET N-CH 100V 59A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock52 608
MOSFET (Metal Oxide)
100V
59A (Tc)
10V
5.5V @ 250µA
114nC @ 10V
2450pF @ 25V
±30V
-
3.8W (Ta), 200W (Tc)
25 mOhm @ 35.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFH30N60X
IXYS

MOSFET N-CH 600V 30A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock2 288
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
4.5V @ 4mA
56nC @ 10V
2270pF @ 25V
±30V
-
500W (Tc)
155 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
TSM60N380CI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
paquet: TO-220-3 Full Pack, Isolated Tab
Stock3 408
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4V @ 250µA
20.5nC @ 10V
1040pF @ 100V
±30V
-
125W (Tc)
380 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220
TO-220-3 Full Pack, Isolated Tab
hot IRF5305STRLPBF
Infineon Technologies

MOSFET P-CH 55V 31A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock14 160
MOSFET (Metal Oxide)
55V
31A (Tc)
10V
4V @ 250µA
63nC @ 10V
1200pF @ 25V
±20V
-
3.8W (Ta), 110W (Tc)
60 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot ZXMN6A11ZTA
Diodes Incorporated

MOSFET N-CH 60V 2.4A SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89-3
  • Package / Case: TO-243AA
paquet: TO-243AA
Stock470 592
MOSFET (Metal Oxide)
60V
2.7A (Ta)
4.5V, 10V
1V @ 250µA
5.7nC @ 10V
330pF @ 40V
±20V
-
1.5W (Ta)
120 mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-89-3
TO-243AA
hot FDC5661N_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 6-SSOT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 763pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SSOT
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
paquet: SOT-23-6 Thin, TSOT-23-6
Stock6 936
MOSFET (Metal Oxide)
60V
4.3A (Ta)
4.5V, 10V
3V @ 250µA
19nC @ 10V
763pF @ 25V
±20V
-
1.6W (Ta)
47 mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-SSOT
SOT-23-6 Thin, TSOT-23-6
NTE2388
NTE Electronics, Inc

MOSFET N-CHANNEL 200V 18A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Request a Quote
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
4V @ 250µA
60 nC @ 10 V
1600 pF @ 25 V
±20V
-
125W (Tc)
180mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
IRF40SC240ARMA1
Infineon Technologies

MOSFET N-CH 40V 360A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 458 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.65mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
paquet: -
Stock5 640
MOSFET (Metal Oxide)
40 V
360A (Tc)
6V, 10V
3.7V @ 250µA
458 nC @ 10 V
18000 pF @ 20 V
±20V
-
2.4W (Ta), 417W (Tc)
0.65mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
DMT15H067SSS-13
Diodes Incorporated

MOSFET N-CH 150V 4.5A/13A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: -
Stock7 500
MOSFET (Metal Oxide)
150 V
4.5A (Ta), 13A (Tc)
10V
4V @ 250µA
6.4 nC @ 10 V
425 pF @ 75 V
±20V
-
1.3W (Ta)
67mOhm @ 4.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IPD42DP15LMATMA1
Infineon Technologies

TRENCH >=100V PG-TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1.04mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 8.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock3 327
MOSFET (Metal Oxide)
150 V
1.7A (Ta), 9A (Tc)
4.5V, 10V
2V @ 1.04mA
43 nC @ 10 V
2100 pF @ 75 V
±20V
-
3W (Ta), 83W (Tc)
420mOhm @ 8.2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK1399-T2B-A
Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPB60R520CP
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Request a Quote
MOSFET (Metal Oxide)
600 V
6.8A (Tc)
10V
3.5V @ 250µA
31 nC @ 10 V
630 pF @ 100 V
±20V
-
66W (Tc)
520mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PMV88ENEAR
Nexperia USA Inc.

MOSFET N-CH 60V 2.2A TO236AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 615mW (Ta), 7.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock22 536
MOSFET (Metal Oxide)
60 V
2.2A (Ta)
4.5V, 10V
2.7V @ 250µA
6 nC @ 10 V
196 pF @ 30 V
±20V
-
615mW (Ta), 7.5W (Tc)
117mOhm @ 2.2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SMM2348ES-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Request a Quote
MOSFET (Metal Oxide)
30 V
8A (Tc)
4.5V, 10V
2.5V @ 250µA
14.5 nC @ 10 V
540 pF @ 15 V
±20V
-
3W (Tc)
24mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PJA3415_R1_00001
Panjit International Inc.

SOT-23, MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock59 166
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.8V, 4.5V
1.2V @ 250µA
18 nC @ 4.5 V
756 pF @ 10 V
±12V
-
1.25W (Ta)
57mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IPP110N20NAAKSA1
Infineon Technologies

MOSFET N-CH 200V 88A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
paquet: -
Stock6 963
MOSFET (Metal Oxide)
200 V
88A (Tc)
10V
4V @ 270µA
87 nC @ 10 V
7100 pF @ 100 V
±20V
-
300W (Tc)
10.7mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
DI100N10PQ
Diotec Semiconductor

MOSFET PWRQFN 5X6 100V 0.0045OHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-QFN (5x6)
  • Package / Case: 8-PowerTDFN
paquet: -
Request a Quote
MOSFET (Metal Oxide)
100 V
100A (Tc)
4.5V, 10V
3V @ 250µA
64 nC @ 10 V
3400 pF @ 30 V
±20V
-
250W (Tc)
5mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-QFN (5x6)
8-PowerTDFN
2SK3402-0-Z-E1-AZ
Renesas Electronics Corporation

TRANSISTOR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
36A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-
GT065P06T
Goford Semiconductor

MOSFET P-CH 60V 82A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Request a Quote
MOSFET (Metal Oxide)
-
82A (Tc)
4.5V, 10V
2.5V @ 250µA
-
-
±20V
-
150W (Tc)
7.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3