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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  86/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPI90N06S4L04AKSA1
Infineon Technologies

MOSFET N-CH 60V 90A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock7 472
MOSFET (Metal Oxide)
60V
90A (Tc)
4.5V, 10V
2.2V @ 90µA
170nC @ 10V
13000pF @ 25V
±16V
-
150W (Tc)
3.7 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot SI5855DC-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 2.7A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
paquet: 8-SMD, Flat Lead
Stock70 116
MOSFET (Metal Oxide)
20V
2.7A (Ta)
1.8V, 4.5V
1V @ 250µA
7.7nC @ 4.5V
-
±8V
Schottky Diode (Isolated)
1.1W (Ta)
110 mOhm @ 2.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
APT20M19JVR
Microsemi Corporation

MOSFET N-CH 200V 112A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 112A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11640pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock6 800
MOSFET (Metal Oxide)
200V
112A
10V
4V @ 1mA
495nC @ 10V
11640pF @ 25V
±30V
-
500W (Tc)
19 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
BUK9611-55A,118
NXP

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5 104
MOSFET (Metal Oxide)
55V
75A (Tc)
4.5V, 10V
2V @ 1mA
-
4230pF @ 25V
±10V
-
166W (Tc)
10 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NDS352P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 0.85A SSOT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock1 062 456
MOSFET (Metal Oxide)
20V
850mA (Ta)
4.5V, 10V
2.5V @ 250µA
4nC @ 5V
125pF @ 10V
±12V
-
500mW (Ta)
350 mOhm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT-3
TO-236-3, SC-59, SOT-23-3
hot IRF1310NSPBF
Infineon Technologies

MOSFET N-CH 100V 42A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock84 000
MOSFET (Metal Oxide)
100V
42A (Tc)
10V
4V @ 250µA
110nC @ 10V
1900pF @ 25V
±20V
-
3.8W (Ta), 160W (Tc)
36 mOhm @ 22A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APTM100SK33T1G
Microsemi Corporation

MOSFET N-CH 1000V 23A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
paquet: SP1
Stock3 056
MOSFET (Metal Oxide)
1000V
23A
10V
5V @ 2.5mA
305nC @ 10V
7868pF @ 25V
±30V
-
390W (Tc)
396 mOhm @ 18A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
EPC8003ENGR
EPC

TRANS GAN 100V 2.5A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 50V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 5V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
paquet: Die
Stock2 912
GaNFET (Gallium Nitride)
100V
2.5A (Ta)
5V
2.5V @ 250µA
0.32nC @ 5V
38pF @ 50V
+6V, -5V
-
-
300 mOhm @ 500mA, 5V
-40°C ~ 125°C (TJ)
Surface Mount
Die
Die
hot AON4703
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 3.4A 8DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3x2)
  • Package / Case: 8-SMD, Flat Lead
paquet: 8-SMD, Flat Lead
Stock1 569 012
MOSFET (Metal Oxide)
20V
3.4A (Ta)
1.8V, 4.5V
1V @ 250µA
6.1nC @ 4.5V
540pF @ 10V
±8V
Schottky Diode (Isolated)
1.7W (Ta)
90 mOhm @ 3.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3x2)
8-SMD, Flat Lead
DMN3042L-13
Diodes Incorporated

MOSFET N-CH 30V 5.8A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 720mW (Ta)
  • Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock5 072
MOSFET (Metal Oxide)
30V
5.8A (Ta)
2.5V, 10V
1.4V @ 250µA
20nC @ 10V
860pF @ 15V
±12V
-
720mW (Ta)
26.5 mOhm @ 5.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
APT26F120L
Microsemi Corporation

MOSFET N-CH 1200V 27A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1135W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
paquet: TO-264-3, TO-264AA
Stock7 408
MOSFET (Metal Oxide)
1200V
27A (Tc)
10V
5V @ 2.5mA
300nC @ 10V
9670pF @ 25V
±30V
-
1135W (Tc)
650 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
IXFH42N60P3
IXYS

MOSFET N-CH 600V 42A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock7 584
MOSFET (Metal Oxide)
600V
42A (Tc)
10V
5V @ 4mA
78nC @ 10V
5150pF @ 25V
±30V
-
830W (Tc)
185 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot IRLHM620TRPBF
Infineon Technologies

MOSFET N-CH 20V 26A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (3x3)
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock7 520
MOSFET (Metal Oxide)
20V
26A (Ta), 40A (Tc)
2.5V, 10V
1.1V @ 50µA
78nC @ 4.5V
3620pF @ 10V
±12V
-
2.7W (Ta), 37W (Tc)
2.5 mOhm @ 20A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (3x3)
8-PowerTDFN
SCT3080ALGC11
Rohm Semiconductor

MOSFET N-CH 650V 30A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 571pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 134W (Tc)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock6 256
MOSFET (Metal Oxide)
650V
30A (Tc)
18V
5.6V @ 5mA
48nC @ 18V
571pF @ 500V
+22V, -4V
-
134W (Tc)
104 mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
STL100N6LF6
STMicroelectronics

MOSFET N CH 60V 100A PWRFLAT 5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
paquet: 8-PowerSMD, Flat Leads
Stock22 086
MOSFET (Metal Oxide)
60V
100A (Tc)
4.5V, 10V
2.5V @ 250µA
130nC @ 10V
8900pF @ 25V
±20V
-
4.8W (Tc)
4.5 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
VN0606L-G
Microchip Technology

MOSFET N-CH 60V 330MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock23 256
MOSFET (Metal Oxide)
60V
330mA (Tj)
10V
2V @ 1mA
-
50pF @ 25V
±30V
-
1W (Tc)
3 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot FQT4N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 0.85A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 425mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
paquet: TO-261-4, TO-261AA
Stock2 121 468
MOSFET (Metal Oxide)
200V
850mA (Tc)
5V, 10V
2V @ 250µA
5.2nC @ 5V
310pF @ 25V
±20V
-
2.2W (Tc)
1.35 Ohm @ 425mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
EPC2001
EPC

TRANS GAN 100V 25A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die Outline (11-Solder Bar)
  • Package / Case: Die
paquet: Die
Stock223 170
GaNFET (Gallium Nitride)
100V
25A (Ta)
5V
2.5V @ 5mA
10nC @ 5V
950pF @ 50V
+6V, -5V
-
-
7 mOhm @ 25A, 5V
-40°C ~ 125°C (TJ)
Surface Mount
Die Outline (11-Solder Bar)
Die
AUIRFR5410-IR
International Rectifier

AUTOMOTIVE HEXFET P CHANNEL

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
100 V
13A (Tc)
10V
4V @ 250µA
58 nC @ 10 V
760 pF @ 25 V
±20V
-
66W (Tc)
205mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH10H032LFVW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V PowerDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
paquet: -
Stock8 970
MOSFET (Metal Oxide)
100 V
26A (Tc)
4.5V, 10V
2.5V @ 250µA
11.9 nC @ 10 V
683 pF @ 50 V
±20V
-
1.7W (Ta)
30mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
TSM900N06CW
Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 6A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
paquet: -
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MOSFET (Metal Oxide)
60 V
6A (Tc)
4.5V, 10V
2.5V @ 250µA
11 nC @ 10 V
525 pF @ 30 V
±20V
-
7.8W (Tc)
90mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
CMS23P04D-HF
Comchip Technology

MOSFET P-CH 40V 23A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1004 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 31.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
40 V
23A (Tc)
4.5V, 10V
2.5V @ 250µA
9 nC @ 4.5 V
1004 pF @ 15 V
±20V
-
2W (Ta), 31.3W (Tc)
40mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
NVTFS6H888NLTAG
onsemi

MOSFET N-CH 80V 4.9A/14A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
paquet: -
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MOSFET (Metal Oxide)
80 V
4.9A (Ta), 14A (Tc)
4.5V, 10V
2V @ 15µA
6 nC @ 10 V
258 pF @ 40 V
±20V
-
2.9W (Ta), 23W (Tc)
50mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
CP805-CXDM4060P-WN
Central Semiconductor Corp

MOSFET P-CH 40V 6.4A DIE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
paquet: -
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MOSFET (Metal Oxide)
40 V
6.4A (Ta)
-
3V @ 250µA
-
-
±20V
-
-
31mOhm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
NX138BKMYL
Nexperia USA Inc.

MOSFET N-CH 60V 380MA DFN1006-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3Ohm @ 380mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883
  • Package / Case: SC-101, SOT-883
paquet: -
Stock119 277
MOSFET (Metal Oxide)
60 V
380mA (Ta)
-
1.5V @ 250µA
0.7 nC @ 10 V
20 pF @ 30 V
±20V
-
380mW (Ta), 2.8W (Tc)
2.3Ohm @ 380mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-883
SC-101, SOT-883
IRFP462
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: -
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MOSFET (Metal Oxide)
500 V
17A (Tc)
10V
4V @ 250µA
190 nC @ 10 V
4100 pF @ 25 V
±20V
-
250W (Tc)
350mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
IXFY26N30X3
IXYS

MOSFET N-CH 300V 26A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock20 706
MOSFET (Metal Oxide)
300 V
26A (Tc)
10V
4.5V @ 500µA
22 nC @ 10 V
1465 pF @ 25 V
±20V
-
170W (Tc)
66mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
ISC035N10NM5LFATMA1
Infineon Technologies

OPTIMOSTM5LINEARFET100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 115µA
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
paquet: -
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MOSFET (Metal Oxide)
100 V
19A (Ta), 164A (Tc)
10V
3.9V @ 115µA
88 nC @ 10 V
7200 pF @ 50 V
±20V
-
3W (Ta), 217W (Tc)
3.5mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN