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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  817/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRLR8103TR
Infineon Technologies

MOSFET N-CH 30V 89A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7 552
MOSFET (Metal Oxide)
30V
89A (Ta)
4.5V, 10V
2V @ 250µA (Min)
50nC @ 5V
-
±20V
-
89W (Tc)
7 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDB3860
Fairchild/ON Semiconductor

MOSFET N-CH 100V 6.4A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock139 476
MOSFET (Metal Oxide)
100V
6.4A (Ta), 30A (Tc)
10V
4.5V @ 250µA
30nC @ 10V
1740pF @ 50V
±20V
-
3.1W (Ta), 71W (Tc)
37 mOhm @ 5.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHB108NQ03LT,118
NXP

MOSFET N-CH 25V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock4 512
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
16.3nC @ 4.5V
1375pF @ 12V
±20V
-
187W (Tc)
6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQU1N50TU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.1A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 550mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock4 880
MOSFET (Metal Oxide)
500V
1.1A (Tc)
10V
5V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
2.5W (Ta), 25W (Tc)
9 Ohm @ 550mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot FQPF7P06
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.3A TO-220F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 410 mOhm @ 2.65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock36 000
MOSFET (Metal Oxide)
60V
5.3A (Tc)
10V
4V @ 250µA
8.2nC @ 10V
295pF @ 25V
±25V
-
24W (Tc)
410 mOhm @ 2.65A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
IXFQ60N60X
IXYS

MOSFET N-CH 600V 60A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
paquet: TO-3P-3, SC-65-3
Stock7 312
MOSFET (Metal Oxide)
600V
60A (Tc)
10V
4.5V @ 8mA
143nC @ 10V
5800pF @ 25V
±30V
-
890W (Tc)
55 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
SQM100N10-10_GE3
Vishay Siliconix

MOSFET N-CH 100V 100A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5 392
MOSFET (Metal Oxide)
100V
100A (Tc)
4.5V, 10V
2.5V @ 250µA
185nC @ 10V
8050pF @ 25V
±20V
-
375W (Tc)
10.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
N0604N-S19-AY
Renesas Electronics America

MOSFET N-CH 60V 82A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 41A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Isolated Tab
paquet: TO-220-3 Isolated Tab
Stock6 864
MOSFET (Metal Oxide)
60V
82A (Ta)
10V
-
75nC @ 10V
4150pF @ 25V
±20V
-
1.5W (Ta), 156W (Tc)
6.5 mOhm @ 41A, 10V
150°C (TJ)
Through Hole
TO-220 Isolated Tab
TO-220-3 Isolated Tab
TK6P53D(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 525V 6A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock4 432
MOSFET (Metal Oxide)
525V
6A (Ta)
10V
4.4V @ 1mA
12nC @ 10V
600pF @ 25V
±30V
-
100W (Tc)
1.3 Ohm @ 3A, 10V
150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMP7A17KQTC
Diodes Incorporated

MOSFET P-CH 70V 3.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 70V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.11W (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3 648
MOSFET (Metal Oxide)
70V
3.8A (Ta)
4.5V, 10V
1V @ 250µA (Min)
18nC @ 10V
635pF @ 40V
±20V
-
2.11W (Ta)
160 mOhm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTGS3130NT1G
ON Semiconductor

MOSFET N-CH 20V 4.2A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 935pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
paquet: SOT-23-6
Stock1 182 804
MOSFET (Metal Oxide)
20V
4.2A (Ta)
2.5V, 4.5V
1.4V @ 250µA
20.3nC @ 4.5V
935pF @ 16V
±8V
-
600mW (Ta)
24 mOhm @ 5.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
ZXMN2F30FHQTA
Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 452pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock3 424
MOSFET (Metal Oxide)
20V
4.9A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4.8nC @ 10V
452pF @ 10V
±12V
-
1.4W
45 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
FQPF47P06YDTU
Fairchild/ON Semiconductor

MOSFET P-CH 60V 30A TO-220F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
paquet: TO-220-3 Full Pack, Formed Leads
Stock7 692
MOSFET (Metal Oxide)
60V
30A (Tc)
10V
4V @ 250µA
110nC @ 10V
3600pF @ 25V
±25V
-
62W (Tc)
26 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3 (Y-Forming)
TO-220-3 Full Pack, Formed Leads
CSD18531Q5AT
Texas Instruments

MOSFET N-CH 60V 100A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3840pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock2 100
MOSFET (Metal Oxide)
60V
100A (Ta)
4.5V, 10V
2.3V @ 250µA
43nC @ 10V
3840pF @ 30V
±20V
-
3.1W (Ta), 156W (Tc)
4.6 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
hot SIHP15N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 15A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock16 872
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
4V @ 250µA
78nC @ 10V
1350pF @ 100V
±30V
-
180W (Tc)
280 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP29N08T,127
Nexperia USA Inc.

MOSFET N-CH 75V 27A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 11V
  • Vgs(th) (Max) @ Id: 5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 14A, 11V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock44 538
MOSFET (Metal Oxide)
75V
27A (Tc)
11V
5V @ 2mA
19nC @ 10V
810pF @ 25V
±30V
-
88W (Tc)
50 mOhm @ 14A, 11V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK7M6R3-40EX
Nexperia USA Inc.

MOSFET N-CH 40V MLFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1912pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
paquet: SOT-1210, 8-LFPAK33 (5-Lead)
Stock16 176
MOSFET (Metal Oxide)
40V
70A
10V
4V @ 1mA
28.1nC @ 10V
1912pF @ 25V
±20V
-
79W (Tc)
6.3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
FDP65N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 65A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock17 544
MOSFET (Metal Oxide)
60V
65A (Tc)
10V
4V @ 250µA
43nC @ 10V
2170pF @ 25V
±20V
-
135W (Tc)
16 mOhm @ 32.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
BSH202,215
Nexperia USA Inc.

MOSFET P-CH 30V 520MA SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 417mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 280mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock154 974
MOSFET (Metal Oxide)
30V
520mA (Ta)
4.5V, 10V
1.9V @ 1mA
2.9nC @ 10V
80pF @ 24V
±20V
-
417mW (Ta)
900 mOhm @ 280mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
STP315N10F7
STMicroelectronics

MOSFET N-CH 100V 180A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 315W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock20 616
MOSFET (Metal Oxide)
100V
180A (Tc)
10V
4.5V @ 250µA
180nC @ 10V
12800pF @ 25V
±20V
-
315W (Tc)
2.7 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
RF1S640SM
Harris Corporation

MOSFET N-CH 200V 18A TO263AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Request a Quote
MOSFET (Metal Oxide)
200 V
18A (Tc)
-
4V @ 250µA
64 nC @ 10 V
1275 pF @ 25 V
±20V
-
125W (Tc)
180mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STL18N60M6
STMicroelectronics

MOSFET N-CH 600V 9A POWERFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6) HV
  • Package / Case: 8-PowerVDFN
paquet: -
Request a Quote
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
4.75V @ 250µA
16.8 nC @ 10 V
650 pF @ 100 V
±25V
-
57W (Tc)
308mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6) HV
8-PowerVDFN
FDWS9509L-F085
onsemi

MOSFET P-CH 40V 65A 8DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tj)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5.1x6.3)
  • Package / Case: 8-PowerTDFN
paquet: -
Request a Quote
MOSFET (Metal Oxide)
40 V
65A (Tc)
4.5V, 10V
3V @ 250µA
67 nC @ 10 V
3360 pF @ 20 V
±16V
-
107W (Tj)
8mOhm @ 65A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-DFN (5.1x6.3)
8-PowerTDFN
TK28V65W5-LQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
paquet: -
Stock14 685
MOSFET (Metal Oxide)
650 V
27.6A (Ta)
10V
4.5V @ 1.6mA
90 nC @ 10 V
3000 pF @ 300 V
±30V
-
240W (Tc)
140mOhm @ 13.8A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
MCU50P06Y-TP
Micro Commercial Co

P-CHANNEL MOSFET,DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 30 V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 89W
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock10 083
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
3V @ 250µA
79 nC @ 10 V
4260 pF @ 30 V
±18V
-
89W
12mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
CPH3407-TL-E-ON
onsemi

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MTP5P25
onsemi

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SJ605-ZJ-E1-AZ
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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