Page 735 - Transistors - FET, MOSFET - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  735/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPI120N06S4H1AKSA1
Infineon Technologies

MOSFET N-CH 60V 120A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock4 832
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 200µA
270nC @ 10V
21900pF @ 25V
±20V
-
250W (Tc)
2.4 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2Pak, TO-262AA
hot 5LN01M-TL-E
ON Semiconductor

MOSFET N-CH 50V 0.1A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
paquet: SC-70, SOT-323
Stock642 900
MOSFET (Metal Oxide)
50V
100mA (Ta)
1.5V, 4V
-
1.57nC @ 10V
6.6pF @ 10V
±10V
-
150mW (Ta)
7.8 Ohm @ 50mA, 4V
150°C (TJ)
Surface Mount
3-MCP
SC-70, SOT-323
hot NDD03N60Z-1G
ON Semiconductor

MOSFET N-CH 600V IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock13 104
MOSFET (Metal Oxide)
600V
2.6A (Tc)
10V
4.5V @ 50µA
12nC @ 10V
312pF @ 25V
±30V
-
61W (Tc)
3.6 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
IPC90N04S53R6ATMA1
Infineon Technologies

MOSFET N-CH 20V 40V 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 23µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-34
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock3 600
MOSFET (Metal Oxide)
40V
90A (Tc)
7V, 10V
3.4V @ 23µA
32.6nC @ 10V
1950pF @ 25V
±20V
-
63W (Tc)
3.6 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
APTM50DAM19G
Microsemi Corporation

MOSFET N-CH 500V 163A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 163A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1136W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
paquet: SP6
Stock6 784
MOSFET (Metal Oxide)
500V
163A
10V
5V @ 10mA
492nC @ 10V
22400pF @ 25V
±30V
-
1136W (Tc)
22.5 mOhm @ 81.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
IXTE250N10
IXYS

MOSFET N-CH 100V 250A ISOPLUS227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 250A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock3 536
MOSFET (Metal Oxide)
100V
250A
-
-
-
-
-
-
-
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
hot IXFX420N10T
IXYS

MOSFET N-CH 100V 420A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 670nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 47000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1670W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock7 136
MOSFET (Metal Oxide)
100V
420A (Tc)
10V
5V @ 8mA
670nC @ 10V
47000pF @ 25V
±20V
-
1670W (Tc)
2.6 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
NVMFS5C670NLT1G
ON Semiconductor

MOSFET N-CH 60V 71A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock7 504
MOSFET (Metal Oxide)
60V
17A (Ta), 71A (Tc)
4.5V, 10V
2V @ 250µA
20nC @ 10V
1400pF @ 25V
±20V
-
3.6W (Ta), 61W (Tc)
6.1 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
DMP6023LFGQ-13
Diodes Incorporated

MOSFET PCH 60V 7.7A POWERDI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerVDFN
paquet: 8-PowerVDFN
Stock3 808
MOSFET (Metal Oxide)
60V
7.7A (Ta)
4.5V, 10V
3V @ 250µA
53.1nC @ 10V
2569pF @ 30V
±20V
-
1W (Ta)
25 mOhm @ 5A, 10V
-55°C ~ 155°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerVDFN
DMN2400UFDQ-13
Diodes Incorporated

MOSFET N-CH 20V 0.9A DFN1212-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 16V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN1212-3
  • Package / Case: 3-XDFN
paquet: 3-XDFN
Stock4 752
MOSFET (Metal Oxide)
20V
900mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.5nC @ 4.5V
37pF @ 16V
±12V
-
400mW (Ta)
600 mOhm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN1212-3
3-XDFN
STL13NM60N
STMicroelectronics

MOSFET N-CH 600V 10A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (8x8) HV
  • Package / Case: 4-PowerFlat? HV
paquet: 4-PowerFlat? HV
Stock3 488
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
4V @ 250µA
30nC @ 10V
790pF @ 50V
±30V
-
3W (Ta), 90W (Tc)
385 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
PowerFlat? (8x8) HV
4-PowerFlat? HV
RF4E100AJTCR
Rohm Semiconductor

NCH 30V 10A MIDDLE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 10A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HUML2020L8
  • Package / Case: 8-PowerUDFN
paquet: 8-PowerUDFN
Stock7 632
MOSFET (Metal Oxide)
30V
10A (Ta)
4.5V
1.5V @ 1mA
13nC @ 4.5V
1460pF @ 15V
±12V
-
2W (Tc)
12.4 mOhm @ 10A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
HUML2020L8
8-PowerUDFN
R6012FNX
Rohm Semiconductor

MOSFET N-CH 600V 12A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 510 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
paquet: TO-220-2 Full Pack
Stock19 896
MOSFET (Metal Oxide)
600V
12A (Tc)
10V
5V @ 1mA
35nC @ 10V
1300pF @ 25V
±30V
-
50W (Tc)
510 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
PSMN4R2-30MLDX
Nexperia USA Inc.

MOSFET N-CH 30V 70A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1795pF 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
paquet: SOT-1210, 8-LFPAK33 (5-Lead)
Stock4 640
MOSFET (Metal Oxide)
30V
70A (Tc)
4.5V, 10V
2.2V @ 1mA
29.3nC @ 10V
1795pF 15V
±20V
Schottky Diode (Body)
65W (Tc)
4.3 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
IRFB4115GPBF
Infineon Technologies

MOSFET N-CH 150V 104A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 62A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock12 804
MOSFET (Metal Oxide)
150V
104A (Tc)
10V
5V @ 250µA
120nC @ 10V
5270pF @ 50V
±20V
-
380W (Tc)
11 mOhm @ 62A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXTA200N055T2
IXYS

MOSFET N-CH 55V 200A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7 524
MOSFET (Metal Oxide)
55V
200A (Tc)
10V
4V @ 250µA
109nC @ 10V
6800pF @ 25V
±20V
-
360W (Tc)
4.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PJA3433_R1_00001
Panjit International Inc.

SOT-23, MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock114 300
MOSFET (Metal Oxide)
30 V
1.1A (Ta)
1.8V, 4.5V
1.3V @ 250µA
1.6 nC @ 4.5 V
125 pF @ 15 V
±8V
-
1.25W (Ta)
370mOhm @ 1.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
E3M0160120K
Wolfspeed, Inc.

SIC, MOSFET, 16M, 1200V, TO-247-

  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 115W
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
paquet: -
Stock1 350
SiC (Silicon Carbide Junction Transistor)
1200 V
-
-
-
-
-
-
-
115W
-
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
AUIRFSL4010-313
Infineon Technologies

MOSFET N-CH 100V 180A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
paquet: -
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MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
4V @ 250µA
215 nC @ 10 V
9575 pF @ 50 V
±20V
-
375W (Tc)
4.7mOhm @ 106A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF9233
International Rectifier

MOSFET P-CH 150V 5.5A TO204AE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 75W
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AE
  • Package / Case: TO-204AE
paquet: -
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MOSFET (Metal Oxide)
150 V
5.5A
-
-
-
-
-
-
75W
-
-
Through Hole
TO-204AE
TO-204AE
RD3G400GNTL
Rohm Semiconductor

MOSFET N-CH 40V 40A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock44 511
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
2.5V @ 1mA
19 nC @ 10 V
1410 pF @ 20 V
±20V
-
26W (Tc)
7.5mOhm @ 40A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK4078-ZK-E1-AY
Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PJD4NA70_L2_00001
Panjit International Inc.

700V N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
700 V
4A (Ta)
10V
4V @ 250µA
10.5 nC @ 10 V
514 pF @ 25 V
±30V
-
77W (Tc)
2.8Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
G7K2N20LLE
Goford Semiconductor

N-PH,200V, ESD,2A,RD<0.7@10V,VTH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6L
  • Package / Case: SOT-23-6
paquet: -
Stock8 394
MOSFET (Metal Oxide)
200 V
2A (Tc)
4.5V, 10V
2.5V @ 250µA
10.8 nC @ 10 V
577 pF @ 100 V
±20V
-
1.8W (Tc)
700mOhm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6L
SOT-23-6
FQPF18N50V2SDTU
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
paquet: -
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MOSFET (Metal Oxide)
500 V
18A (Tj)
10V
5V @ 250µA
55 nC @ 10 V
3290 pF @ 25 V
±30V
-
69W (Tc)
265mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
UPA1912TE-0-T1-AT
Renesas Electronics Corporation

MOSFET P-CH 12V 4.5A SC95

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-95
  • Package / Case: SC-95
paquet: -
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MOSFET (Metal Oxide)
12 V
4.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
5.6 nC @ 4 V
810 pF @ 10 V
±10V
-
200mW (Ta)
50mOhm @ 2.5A, 4.5V
150°C
Surface Mount
SC-95
SC-95
DMTH6009LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
paquet: -
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MOSFET (Metal Oxide)
60 V
11.76A (Ta), 89.5A (Tc)
4.5V, 10V
2V @ 250µA
33.5 nC @ 10 V
1925 pF @ 30 V
±16V
-
2.8W (Ta), 136W (Tc)
10mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
SSS10N60B
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
paquet: -
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MOSFET (Metal Oxide)
600 V
9A (Tj)
10V
4V @ 250µA
70 nC @ 10 V
2700 pF @ 25 V
±30V
-
50W (Tc)
800mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack