Page 629 - Transistors - FET, MOSFET - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  629/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSL307SPL6327HTSA1
Infineon Technologies

MOSFET P-CH 30V 5.5A TSOP6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSOP6-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
paquet: SOT-23-6 Thin, TSOT-23-6
Stock6 528
MOSFET (Metal Oxide)
30V
5.5A (Ta)
4.5V, 10V
2V @ 40µA
29nC @ 10V
805pF @ 25V
±20V
-
2W (Ta)
43 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSOP6-6
SOT-23-6 Thin, TSOT-23-6
hot IRFZ48NSTRRPBF
Infineon Technologies

MOSFET N-CH 55V 64A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock6 660
MOSFET (Metal Oxide)
55V
64A (Tc)
10V
4V @ 250µA
81nC @ 10V
1970pF @ 25V
±20V
-
3.8W (Ta), 130W (Tc)
14 mOhm @ 32A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRLR7833TRL
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock54 456
MOSFET (Metal Oxide)
30V
140A (Tc)
4.5V, 10V
2.3V @ 250µA
50nC @ 4.5V
4010pF @ 15V
±20V
-
140W (Tc)
4.5 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR13N20DTRL
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock6 464
MOSFET (Metal Oxide)
200V
13A (Tc)
10V
5.5V @ 250µA
38nC @ 10V
830pF @ 25V
±30V
-
110W (Tc)
235 mOhm @ 8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7523D1
Infineon Technologies

MOSFET N-CH 30V 2.7A MICRO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8?
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Stock7 792
MOSFET (Metal Oxide)
30V
2.7A (Ta)
4.5V, 10V
1V @ 250µA
12nC @ 10V
210pF @ 25V
±20V
Schottky Diode (Isolated)
1.25W (Ta)
130 mOhm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro8?
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
hot 2SK3816-DL-E
ON Semiconductor

MOSFET N-CH 60V 40A SMP-FD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMP-FD
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock17 520
MOSFET (Metal Oxide)
60V
40A (Ta)
4V, 10V
2.6V @ 1mA
40nC @ 10V
1780pF @ 20V
±20V
-
1.65W (Ta), 50W (Tc)
26 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
SMP-FD
TO-252-3, DPak (2 Leads + Tab), SC-63
hot HUFA75637S3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 44A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock130 440
MOSFET (Metal Oxide)
100V
44A (Tc)
10V
4V @ 250µA
108nC @ 20V
1700pF @ 25V
±20V
-
155W (Tc)
30 mOhm @ 44A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFR024TR
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock9 120
MOSFET (Metal Oxide)
60V
14A (Tc)
10V
4V @ 250µA
25nC @ 10V
640pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
100 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IXTH72N20
IXYS

MOSFET N-CH 200V 72A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock390 000
MOSFET (Metal Oxide)
200V
72A (Tc)
10V
4V @ 250µA
170nC @ 10V
4400pF @ 25V
±20V
-
400W (Tc)
33 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
hot STB20NM50-1
STMicroelectronics

MOSFET N-CH 550V 20A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock32 700
MOSFET (Metal Oxide)
550V
20A (Tc)
10V
5V @ 250µA
56nC @ 10V
1480pF @ 25V
±30V
-
192W (Tc)
250 mOhm @ 10A, 10V
-65°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot FQP55N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 55A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock85 500
MOSFET (Metal Oxide)
100V
55A (Tc)
10V
4V @ 250µA
98nC @ 10V
2730pF @ 25V
±25V
-
155W (Tc)
26 mOhm @ 27.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot AO6415
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 3.3A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
paquet: SC-74, SOT-457
Stock894 744
MOSFET (Metal Oxide)
20V
3.3A (Ta)
2.5V, 10V
1.4V @ 250µA
6nC @ 4.5V
620pF @ 10V
±12V
-
1.25W (Ta)
75 mOhm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
hot ZXMN2069FTA
Diodes Incorporated

MOSFET N-CH SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock144 000
MOSFET (Metal Oxide)
-
-
4.5V, 10V
-
-
-
±20V
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot FQD7N30TM
Fairchild/ON Semiconductor

MOSFET N-CH 300V 5.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock502 140
MOSFET (Metal Oxide)
300V
5.5A (Tc)
10V
5V @ 250µA
17nC @ 10V
610pF @ 25V
±30V
-
2.5W (Ta), 50W (Tc)
700 mOhm @ 2.75A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IPP200N25N3 G
Infineon Technologies

MOSFET N-CH 250V 64A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 64A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock18 942
MOSFET (Metal Oxide)
250V
64A (Tc)
10V
4V @ 270µA
86nC @ 10V
7100pF @ 100V
±20V
-
300W (Tc)
20 mOhm @ 64A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot SUP40N25-60-E3
Vishay Siliconix

MOSFET N-CH 250V 40A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock4 736
MOSFET (Metal Oxide)
250V
40A (Tc)
6V, 10V
4V @ 250µA
140nC @ 10V
5000pF @ 25V
±30V
-
3.75W (Ta), 300W (Tc)
60 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SI4386DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 11A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.47W (Ta)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock612 840
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
2.5V @ 250µA
18nC @ 4.5V
-
±20V
-
1.47W (Ta)
7 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
STP80N900K6
STMicroelectronics

Linear IC's

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
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MOSFET (Metal Oxide)
800 V
6A (Tc)
10V
4V @ 50µA
7 nC @ 10 V
362 pF @ 400 V
±30V
-
68W (Tc)
900mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
IPD50P04P4L11AUMA1
Infineon Technologies

MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.2V @ 85µA
59 nC @ 10 V
3900 pF @ 25 V
+5V, -16V
-
58W (Tc)
10.6mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFN90N170SK
IXYS

SICFET N-CH 1700V 90A SOT227B

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 36mA
  • Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
paquet: -
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SiCFET (Silicon Carbide)
1700 V
90A (Tc)
20V
4V @ 36mA
376 nC @ 20 V
7340 pF @ 1000 V
+20V, -5V
-
-
35mOhm @ 100A, 20V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
G3R160MT17J-TR
GeneSiC Semiconductor

1700V 160M TO-263-7 G3R SIC MOSF

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V
  • Vgs (Max): +15V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 145W (Tc)
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
paquet: -
Stock6 798
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
2.7V @ 5mA
29 nC @ 15 V
854 pF @ 1000 V
+15V, -5V
-
145W (Tc)
208mOhm @ 12A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
S2M0025120K
SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
paquet: -
Stock810
SiCFET (Silicon Carbide)
1200 V
63A (Tc)
20V
4V @ 15mA
130 nC @ 20 V
4402 pF @ 1000 V
+25V, -10V
-
446W (Tc)
34mOhm @ 50A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
SQS142ENW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 113W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK® 1212-8SLW
  • Package / Case: PowerPAK® 1212-8SLW
paquet: -
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MOSFET (Metal Oxide)
40 V
110A (Tc)
10V
3.3V @ 250µA
35 nC @ 10 V
1952 pF @ 25 V
±20V
-
113W (Tc)
4.5mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
GSGQ6988
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 7.4A, 65V,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 65 V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
  • Vgs (Max): +20V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 1.47W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: -
Stock17 745
MOSFET (Metal Oxide)
65 V
7.4A (Ta)
4.5V, 10V
2.5V @ 250µA
22 nC @ 10 V
1300 pF @ 30 V
+20V, -12V
-
1.47W (Tc)
16mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DMN601TKQ-13
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 343mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
paquet: -
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MOSFET (Metal Oxide)
60 V
343mA (Ta)
5V, 10V
2.5V @ 1mA
1.04 nC @ 10 V
41 pF @ 30 V
±20V
-
400mW (Ta)
2Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
XP2322GN
YAGEO XSEMI

MOSFET N-CH 20V 2.5A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 20 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 833mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 1.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock3 000
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
1.8V, 4.5V
1V @ 1mA
11 nC @ 4.5 V
560 pF @ 20 V
±8V
-
833mW (Ta)
90mOhm @ 1.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SIHF9640S-GE3
Vishay Siliconix

MOSFET P-CH 200V 11A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
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MOSFET (Metal Oxide)
200 V
11A (Tc)
10V
4V @ 250µA
44 nC @ 10 V
1200 pF @ 25 V
±20V
-
3W (Ta), 125W (Tc)
500mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMN4035LQ-13
Diodes Incorporated

MOSFET N-CH 40V 4.6A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 720mW
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock23 814
MOSFET (Metal Oxide)
40 V
4.6A (Ta)
4.5V, 10V
3V @ 250µA
12.5 nC @ 10 V
574 pF @ 20 V
±20V
-
720mW
42mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3