Transistors - FET, MOSFET - Simples

IPI80N06S3-05

Infineon Technologies

MOSFET N-CH 55V 80A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 165W (Tc)
• Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 63A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

RJK4518DPK-00#T0

Renesas Electronics America

MOSFET N-CH 450V 39A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

paquet: TO-3P-3, SC-65-3

AOL1414

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 85A 8ULTRASO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.08W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UltraSO-8?
• Package / Case: 3-PowerSMD, Flat Leads

paquet: 3-PowerSMD, Flat Leads

FQI7P06TU

Fairchild/ON Semiconductor

MOSFET P-CH 60V 7A I2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 410 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK (TO-262)
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

STI12NM50N

STMicroelectronics

MOSFET N-CH 500V 11A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

IPP60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 162W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

paquet: TO-220-3

IPP50R520CPXKSA1

Infineon Technologies

MOSFET N-CH 500V 7.1A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 66W (Tc)
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

paquet: TO-220-3

IRFS5615TRLPBF

Infineon Technologies

MOSFET N-CH 150V 33A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD70N12S3L12ATMA1

Infineon Technologies

MOSFET N-CHANNEL_100+

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

paquet: -

SIHB12N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 12A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AOT20C60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 463W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

paquet: TO-220-3

IRFU9210PBF

Vishay Siliconix

MOSFET P-CH 200V 1.9A I-PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251AA
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

paquet: TO-251-3 Short Leads, IPak, TO-251AA

NVTFS4C05NWFTAG

ON Semiconductor

MOSFET N-CH 30V 22A U8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 102A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

paquet: 8-PowerWDFN

AOD4T60P

Alpha & Omega Semiconductor Inc.

MOSFET N-CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 522pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6794MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 32A DIRECTFET-MX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

paquet: DirectFET? Isometric MX

FDS6682

Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

paquet: 8-SOIC (0.154", 3.90mm Width)

STP13NM60N

STMicroelectronics

MOSFET N-CH 600V 11A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

paquet: TO-220-3

SIHG33N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 33A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3454pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 278W (Tc)
• Rds On (Max) @ Id, Vgs: 98 mOhm @ 16.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

paquet: TO-247-3

AO4752

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

paquet: 8-SOIC (0.154", 3.90mm Width)

TPH3207WS

Transphorm

GAN FET 650V 50A TO247

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V
• Vgs(th) (Max) @ Id: 2.65V @ 700µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 2197pF @ 400V
• Vgs (Max): ±18V
• FET Feature: -
• Power Dissipation (Max): 178W (Tc)
• Rds On (Max) @ Id, Vgs: 41 mOhm @ 32A, 8V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

paquet: TO-247-3

XP3NA3R4MT

YAGEO XSEMI

MOSFET N-CH 30V 29.2A 73A PMPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 29.2A (Ta), 73A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 31.25W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PMPAK® 5 x 6
• Package / Case: 8-PowerLDFN

paquet: -

SQ3457EV-T1_GE3

Vishay Siliconix

MOSFET P-CHANNEL 30V 6.8A 6TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Tc)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

paquet: -

PJW7N04_R2_00001

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

paquet: -

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TSM2N7002AKCX-RFG

Taiwan Semiconductor Corporation

60V, 0.3A, SINGLE N-CHANNEL POWE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 357mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: -

IRFF223

Harris Corporation

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-205AF (TO-39)
• Package / Case: TO-205AF Metal Can

paquet: -

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R6006JNJGTL

Rohm Semiconductor

MOSFET N-CH 600V 6A LPTS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 7V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LPTS
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

NP90N04VLK-E1-AY

Renesas Electronics Corporation

MOSFET N-CH 40V 90A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (MP-3ZP)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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ISC073N12LM6ATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR,120V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

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