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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  564/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRLR3714ZTRL
Infineon Technologies

MOSFET N-CH 20V 37A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock4 400
MOSFET (Metal Oxide)
20V
37A (Tc)
4.5V, 10V
2.55V @ 250µA
7.1nC @ 4.5V
560pF @ 10V
±20V
-
35W (Tc)
15 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
BUK952R8-60E,127
NXP

MOSFET N-CH 60V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17450pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock5 408
MOSFET (Metal Oxide)
60V
120A (Tc)
5V, 10V
2.1V @ 1mA
120nC @ 5V
17450pF @ 25V
±10V
-
349W (Tc)
2.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK755R4-100E,127
Nexperia USA Inc.

MOSFET N-CH 100V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11810pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock3 200
MOSFET (Metal Oxide)
100V
120A (Tc)
10V
4V @ 1mA
180nC @ 10V
11810pF @ 25V
±20V
-
349W (Tc)
5.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
APT20M22B2VRG
Microsemi Corporation

MOSFET N-CH 200V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
paquet: TO-247-3 Variant
Stock7 216
MOSFET (Metal Oxide)
200V
100A (Tc)
10V
4V @ 2.5mA
435nC @ 10V
10200pF @ 25V
±30V
-
520W (Tc)
22 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
hot FDS4435
Fairchild/ON Semiconductor

MOSFET P-CH 30V 8.8A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1604pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock12 631 380
MOSFET (Metal Oxide)
30V
8.8A (Ta)
4.5V, 10V
3V @ 250µA
24nC @ 5V
1604pF @ 15V
±25V
-
2.5W (Ta)
20 mOhm @ 8.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRFU224
Vishay Siliconix

MOSFET N-CH 250V 3.8A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock17 652
MOSFET (Metal Oxide)
250V
3.8A (Tc)
10V
4V @ 250µA
14nC @ 10V
260pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
1.1 Ohm @ 2.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
hot STW80NF55-08
STMicroelectronics

MOSFET N-CH 55V 80A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock11 820
MOSFET (Metal Oxide)
55V
80A (Tc)
10V
4V @ 250µA
150nC @ 10V
3850pF @ 25V
±20V
-
300W (Tc)
8 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STP80NE06-10
STMicroelectronics

MOSFET N-CH 60V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock71 400
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 250µA
140nC @ 10V
10000pF @ 25V
±20V
-
150W (Tc)
10 mOhm @ 40A, 10V
175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPP60R520E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 8.1A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock2 960
MOSFET (Metal Oxide)
600V
8.1A (Tc)
10V
3.5V @ 230µA
23.4nC @ 10V
512pF @ 100V
±20V
-
66W (Tc)
520 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
APT60M60JLL
Microsemi Corporation

MOSFET N-CH 600V 70A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 289nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock4 304
MOSFET (Metal Oxide)
600V
70A
10V
5V @ 5mA
289nC @ 10V
12630pF @ 25V
±30V
-
694W (Tc)
60 mOhm @ 35A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT8020B2LLG
Microsemi Corporation

MOSFET N-CH 800V 38A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
paquet: TO-247-3 Variant
Stock7 376
MOSFET (Metal Oxide)
800V
38A (Tc)
10V
5V @ 2.5mA
195nC @ 10V
5200pF @ 25V
±30V
-
694W (Tc)
200 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
IXTT120N15P
IXYS

MOSFET N-CH 150V 120A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock7 840
MOSFET (Metal Oxide)
150V
120A (Tc)
10V
5V @ 250µA
150nC @ 10V
4900pF @ 25V
±20V
-
600W (Tc)
16 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot IXTH140P05T
IXYS

MOSFET P-CH 50V 140A TO-247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 298W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock5 744
MOSFET (Metal Oxide)
50V
140A (Tc)
10V
4V @ 250µA
200nC @ 10V
13500pF @ 25V
±15V
-
298W (Tc)
9 mOhm @ 70A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
AON6266
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 13A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
paquet: 8-PowerSMD, Flat Leads
Stock5 152
MOSFET (Metal Oxide)
60V
13A (Ta), 30A (Tc)
4.5V, 10V
2.5V @ 250µA
30nC @ 10V
1340pF @ 30V
±20V
-
5W (Ta), 38W (Tc)
15 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
PMN27UP,115
Nexperia USA Inc.

MOSFET P-CH 20V 5.7A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 2.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
paquet: SC-74, SOT-457
Stock2 864
MOSFET (Metal Oxide)
20V
5.7A (Ta)
1.8V, 4.5V
950mV @ 250µA
31nC @ 4.5V
2340pF @ 10V
±8V
-
540mW (Ta), 6.25W (Tc)
32 mOhm @ 2.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
TSM210N02CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock5 984
MOSFET (Metal Oxide)
20V
6.7A (Tc)
1.8V, 4.5V
800mV @ 250µA
4nC @ 4.5V
600pF @ 10V
±10V
-
1.56W (Tc)
25 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot STD95N04
STMicroelectronics

MOSFET N-CH 40V 80A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock180 360
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 250µA
54nC @ 10V
2200pF @ 25V
±20V
-
110W (Tc)
6.5 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
TK72A08N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 75V 80A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock11 208
MOSFET (Metal Oxide)
75V
80A (Ta)
10V
4V @ 1mA
175nC @ 10V
8200pF @ 10V
±20V
-
45W (Tc)
4.5 mOhm @ 40A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
IXTB62N50L
IXYS

MOSFET N-CH 500V 62A PLUS264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 550nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 800W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 31A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264?
  • Package / Case: TO-264-3, TO-264AA
paquet: TO-264-3, TO-264AA
Stock7 168
MOSFET (Metal Oxide)
500V
62A (Tc)
20V
5.5V @ 250µA
550nC @ 20V
11500pF @ 25V
±30V
-
800W (Tc)
100 mOhm @ 31A, 20V
-55°C ~ 150°C (TJ)
Through Hole
PLUS264?
TO-264-3, TO-264AA
FDD9411_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 15A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48.4W (Tj)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3 504
MOSFET (Metal Oxide)
40V
15A (Tc)
10V
4V @ 250µA
22.5nC @ 10V
1080pF @ 25V
±20V
-
48.4W (Tj)
7.8 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RQ1C075UNTR
Rohm Semiconductor

MOSFET N-CH 20V 7.5A TSMT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
paquet: 8-SMD, Flat Lead
Stock2 302 932
MOSFET (Metal Oxide)
20V
7.5A (Ta)
1.5V, 4.5V
1V @ 1mA
18nC @ 4.5V
1400pF @ 10V
±10V
-
700mW (Ta)
16 mOhm @ 7.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead
CEDM7004VL TR
Central Semiconductor Corp

MOSFET N-CH 30V 0.45A SOT883

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.79nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
  • Vgs (Max): 8V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883VL
  • Package / Case: SC-101, SOT-883
paquet: SC-101, SOT-883
Stock166 386
MOSFET (Metal Oxide)
30V
450mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.79nC @ 4.5V
43pF @ 25V
8V
-
100mW (Ta)
460 mOhm @ 200mA, 4.5V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-883VL
SC-101, SOT-883
IXFH26N100X
IXYS

MOSFET N-CH 1000V 26A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 860W (Tc)
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
26A (Tc)
10V
6V @ 4mA
113 nC @ 10 V
3290 pF @ 25 V
±30V
-
860W (Tc)
320mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
ISC800P06LMATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 724µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
paquet: -
Stock13 305
MOSFET (Metal Oxide)
60 V
19.6A (Tc)
4.5V, 10V
2V @ 724µA
14.8 nC @ 10 V
1400 pF @ 30 V
±20V
-
83W (Tc)
80mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
XP235N2001TR-G
Torex Semiconductor Ltd

MOSFET N-CH 30V 2A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock300
MOSFET (Metal Oxide)
30 V
2A (Ta)
4.5V, 10V
2.4V @ 250µA
3.6 nC @ 10 V
220 pF @ 10 V
±20V
-
400mW (Ta)
110mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
PJQ5449E-AU_R2_006A1
Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Stock9 000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUF76129P3
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 56A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: -
Request a Quote
MOSFET (Metal Oxide)
30 V
56A (Tc)
4.5V, 10V
3V @ 250µA
45 nC @ 10 V
1350 pF @ 25 V
±20V
-
105W (Tc)
16mOhm @ 56A, 10V
-40°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDP030N06B
Fairchild Semiconductor

1-ELEMENT, N-CHANNEL, MOS FET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-