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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  476/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF7220TRPBF
Infineon Technologies

MOSFET P-CH 14V 11A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 14V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock613 704
MOSFET (Metal Oxide)
14V
11A (Ta)
2.5V, 4.5V
600mV @ 250µA
125nC @ 5V
8075pF @ 10V
±12V
-
2.5W (Ta)
12 mOhm @ 11A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI1037X-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 0.77A SC89

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 170mW (Ta)
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89 (SOT-563F)
  • Package / Case: SOT-563, SOT-666
paquet: SOT-563, SOT-666
Stock36 000
MOSFET (Metal Oxide)
20V
770mA (Ta)
1.8V, 4.5V
450mV @ 250µA (Min)
5.5nC @ 4.5V
-
±8V
-
170mW (Ta)
195 mOhm @ 770mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89 (SOT-563F)
SOT-563, SOT-666
BUK7E11-55B,127
NXP

MOSFET N-CH 55V 75A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2604pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock4 448
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 1mA
37nC @ 10V
2604pF @ 25V
±20V
-
157W (Tc)
11 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
STW12NM60N
STMicroelectronics

MOSFET N-CH 600V 10A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock4 368
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
4V @ 250µA
30.5nC @ 10V
960pF @ 50V
±25V
-
90W (Tc)
410 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IPT210N25NFDATMA1
Infineon Technologies

MV POWER MOS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Stock2 512
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPD80R750P7ATMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 984
MOSFET (Metal Oxide)
800V
7A (Tc)
10V
3.5V @ 140µA
17nC @ 10V
460pF @ 500V
±20V
-
51W (Tc)
750 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS5C442NT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
paquet: 8-PowerTDFN, 5 Leads
Stock2 480
MOSFET (Metal Oxide)
40V
29A (Ta), 140A (Tc)
10V
4V @ 250µA
32nC @ 10V
2100pF @ 25V
±20V
-
3.7W (Ta), 83W (Tc)
2.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
STI300N4F6
STMicroelectronics

MOSFET N CH 40V 160A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock3 152
MOSFET (Metal Oxide)
40V
160A (Tc)
10V
4V @ 250µA
240nC @ 10V
13800pF @ 25V
±20V
-
300W (Tc)
2.2 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK7Y3R5-40E,115
Nexperia USA Inc.

MOSFET N-CH 40V LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 49.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3583pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
paquet: SC-100, SOT-669
Stock4 816
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
4V @ 1mA
49.4nC @ 10V
3583pF @ 25V
±20V
-
167W (Tc)
3.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
hot IPA50R520CPXKSA1
Infineon Technologies

MOSFET N-CH 500V 7.1A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220FP
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock24 000
MOSFET (Metal Oxide)
500V
7.1A (Tc)
10V
3.5V @ 250µA
17nC @ 10V
680pF @ 100V
±20V
-
66W (Tc)
520 mOhm @ 3.8A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220FP
TO-220-3 Full Pack
hot NTMFS4941NT1G
ON Semiconductor

MOSFET N-CH 30V 9A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta), 25.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
paquet: 8-PowerTDFN, 5 Leads
Stock26 508
MOSFET (Metal Oxide)
30V
9A (Ta), 47A (Tc)
4.5V, 10V
2.2V @ 250µA
25.5nC @ 10V
1650pF @ 15V
±20V
-
910mW (Ta), 25.5W (Tc)
6.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot IRFH5304TRPBF
Infineon Technologies

MOSFET N-CH 30V 22A 8VQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 47A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerVDFN
paquet: 8-PowerVDFN
Stock96 000
MOSFET (Metal Oxide)
30V
22A (Ta), 79A (Tc)
4.5V, 10V
2.35V @ 50µA
41nC @ 10V
2360pF @ 10V
±20V
-
3.6W (Ta), 46W (Tc)
4.5 mOhm @ 47A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerVDFN
hot STH270N8F7-6
STMicroelectronics

MOSFET N-CH 80V 180A H2PAK-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 315W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
paquet: TO-263-7, D2Pak (6 Leads + Tab)
Stock5 248
MOSFET (Metal Oxide)
80V
180A (Tc)
10V
4V @ 250µA
193nC @ 10V
13600pF @ 50V
±20V
-
315W (Tc)
2.1 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK
TO-263-7, D2Pak (6 Leads + Tab)
hot STW15NK50Z
STMicroelectronics

MOSFET N-CH 500V 14A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock5 696
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
4.5V @ 100µA
106nC @ 10V
2260pF @ 25V
±30V
-
160W (Tc)
340 mOhm @ 7A, 10V
-50°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
PSMN2R8-25MLC,115
Nexperia USA Inc.

MOSFET N-CH 25V 70A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2432pF@ 12.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
paquet: SOT-1210, 8-LFPAK33 (5-Lead)
Stock14 232
MOSFET (Metal Oxide)
25V
70A (Tc)
4.5V, 10V
2.15V @ 1mA
37.7nC @ 10V
2432pF@ 12.5V
±20V
-
88W (Tc)
2.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
C3M0280090D
Cree/Wolfspeed

MOSFET N-CH 900V 11.5A

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
  • Vgs (Max): +18V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock18 216
SiCFET (Silicon Carbide)
900V
11.5A (Tc)
15V
3.5V @ 1.2mA
9.5nC @ 15V
150pF @ 600V
+18V, -8V
-
54W (Tc)
360 mOhm @ 7.5A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIHP22N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: -
  • Package / Case: TO-220-3
paquet: -
Request a Quote
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
4V @ 250µA
86 nC @ 10 V
1920 pF @ 100 V
±30V
-
227W (Tc)
180mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
-
TO-220-3
SSM3J374R-LXHF
Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-30V VGSS:-20/+10

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: -
Stock26 097
MOSFET (Metal Oxide)
30 V
4A (Ta)
4V, 10V
2V @ 100µA
5.9 nC @ 10 V
280 pF @ 15 V
+10V, -20V
-
1W (Ta)
71mOhm @ 3A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
AOI21357
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 23A/70A TO251A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251A
  • Package / Case: TO-251-3 Stub Leads, IPAK
paquet: -
Stock300
MOSFET (Metal Oxide)
30 V
23A (Ta), 70A (Tc)
4.5V, 10V
2.3V @ 250µA
70 nC @ 10 V
2830 pF @ 15 V
±25V
-
6.2W (Ta), 78W (Tc)
8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251A
TO-251-3 Stub Leads, IPAK
RJK60S3DPP-E0-T2
Renesas Electronics Corporation

MOSFET N-CH 600V 12A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 27.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 440mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
paquet: -
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MOSFET (Metal Oxide)
600 V
12A (Ta)
-
-
13.6 nC @ 10 V
720 pF @ 25 V
-
-
27.7W (Tc)
440mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IXFA22N65X2-TRL
IXYS

MOSFET N-CH 650V 22A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
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MOSFET (Metal Oxide)
650 V
22A (Tc)
10V
5V @ 1.5mA
37 nC @ 10 V
2190 pF @ 25 V
±30V
-
390W (Tc)
145mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQD40081EL_GE3
Vishay Siliconix

MOSFET P-CH 40V 50A TO252AA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock6 063
MOSFET (Metal Oxide)
40 V
50A (Tc)
10V
2.5V @ 250µA
210 nC @ 10 V
9950 pF @ 25 V
±20V
-
71W (Tc)
8.5mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK0393DPA-00-J53
Renesas Electronics Corporation

MOSFET N-CH 30V 40A 8WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
paquet: -
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MOSFET (Metal Oxide)
30 V
40A (Ta)
-
-
21 nC @ 4.5 V
3270 pF @ 10 V
-
-
40W (Tc)
4.3mOhm @ 20A, 10V
-
Surface Mount
8-WPAK
8-PowerWDFN
TK25S06N1L-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock4 332
MOSFET (Metal Oxide)
60 V
25A (Ta)
4.5V, 10V
2.5V @ 100µA
15 nC @ 10 V
855 pF @ 10 V
±20V
-
57W (Tc)
18.5mOhm @ 12.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
GSFC0301
Good-Ark Semiconductor

MOSFETS, P-CH, SINGLE, -30V, -4.

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock18 000
MOSFET (Metal Oxide)
30 V
4.1A (Ta)
2.5V, 10V
-
11 nC @ 4.5 V
1175 pF @ 15 V
±12V
-
1.56W (Ta)
65mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TPCA8109-TE12L1-V
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 24A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
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MOSFET (Metal Oxide)
30 V
24A (Ta)
4.5V, 10V
2V @ 500µA
56 nC @ 10 V
2400 pF @ 10 V
+20V, -25V
-
1.6W (Ta), 30W (Tc)
9mOhm @ 12A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
NTB23N03RT4
onsemi

MOSFET N-CH 25V 23A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37.5W (Tj)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
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MOSFET (Metal Oxide)
25 V
23A (Ta)
-
-
-
-
±20V
-
37.5W (Tj)
45mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RS3E130ATTB1
Rohm Semiconductor

PCH -30V -13A POWER MOSFET : RS3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: -
Stock14 466
MOSFET (Metal Oxide)
30 V
13A (Ta)
4.5V, 10V
2.5V @ 2mA
83 nC @ 10 V
3730 pF @ 15 V
±20V
-
1.4W (Ta)
8.5mOhm @ 13A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)