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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  426/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF6720S2TRPBF
Infineon Technologies

MOSFET N-CH 30V 11A DIRECTFET-S1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET S1
  • Package / Case: DirectFET? Isometric S1
paquet: DirectFET? Isometric S1
Stock3 584
MOSFET (Metal Oxide)
30V
11A (Ta), 35A (Tc)
4.5V, 10V
2.35V @ 25µA
12nC @ 4.5V
1140pF @ 15V
±20V
-
1.7W (Ta), 17W (Tc)
8 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DIRECTFET S1
DirectFET? Isometric S1
NDT02N60ZT3G
ON Semiconductor

MOSFET N-CH 600V 300MA SOT223-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223 (TO-261)
  • Package / Case: TO-261-4, TO-261AA
paquet: TO-261-4, TO-261AA
Stock3 504
MOSFET (Metal Oxide)
600V
300mA (Tc)
10V
4.5V @ 50µA
7.4nC @ 10V
170pF @ 25V
±30V
-
2W (Tc)
8 Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
JANTX2N7225U
Microsemi Corporation

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 27.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-267AB
  • Package / Case: TO-267AB
paquet: TO-267AB
Stock6 544
MOSFET (Metal Oxide)
200V
27.4A (Tc)
10V
4V @ 250µA
115nC @ 10V
-
±20V
-
4W (Ta), 150W (Tc)
105 mOhm @ 27.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-267AB
TO-267AB
hot JANTX2N7225
Microsemi Corporation

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 27.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-254AA
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
paquet: TO-254-3, TO-254AA (Straight Leads)
Stock6 880
MOSFET (Metal Oxide)
200V
27.4A (Tc)
10V
4V @ 250µA
115nC @ 10V
-
±20V
-
4W (Ta), 150W (Tc)
105 mOhm @ 27.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-254AA
TO-254-3, TO-254AA (Straight Leads)
RP1L080SNTR
Rohm Semiconductor

MOSFET N-CH 60V 8A MPT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT6
  • Package / Case: 6-SMD, Flat Leads
paquet: 6-SMD, Flat Leads
Stock4 992
MOSFET (Metal Oxide)
60V
8A (Ta)
4V, 10V
3V @ 1mA
40nC @ 10V
1700pF @ 10V
±20V
-
2W (Ta)
24 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
MPT6
6-SMD, Flat Leads
NTD95N02R
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 408
MOSFET (Metal Oxide)
24V
12A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
21nC @ 4.5V
2400pF @ 20V
±20V
-
1.25W (Ta), 86W (Tc)
5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot HUF75645S3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 238nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3790pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock25 356
MOSFET (Metal Oxide)
100V
75A (Tc)
10V
4V @ 250µA
238nC @ 20V
3790pF @ 25V
±20V
-
310W (Tc)
14 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF300P227
Infineon Technologies

MOSFET IFX OPTIMOS TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4893pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock7 600
MOSFET (Metal Oxide)
300V
50A (Tc)
10V
4V @ 270µA
107nC @ 10V
4893pF @ 50V
±20V
-
313W (Tc)
40 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IXTT500N04T2
IXYS

MOSFET N-CH 40V 500A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1000W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock7 040
MOSFET (Metal Oxide)
40V
500A (Tc)
10V
3.5V @ 250µA
405nC @ 10V
25000pF @ 25V
±20V
-
1000W (Tc)
1.6 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT21N50Q
IXYS

MOSFET N-CH 500V 21A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock5 248
MOSFET (Metal Oxide)
500V
21A (Tc)
10V
4.5V @ 4mA
84nC @ 10V
3000pF @ 25V
±30V
-
280W (Tc)
250 mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
NTMFS4H01NFT3G
ON Semiconductor

MOSFET N-CH 25V 54A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 334A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5538pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock2 848
MOSFET (Metal Oxide)
25V
54A (Ta), 334A (Tc)
4.5V, 10V
2.1V @ 250µA
82nC @ 10V
5538pF @ 12V
±20V
-
3.2W (Ta), 125W (Tc)
0.7 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
2N7002TQ-7-F
Diodes Incorporated

MOSFET NCH 60V 115MA SOT523

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
paquet: SOT-523
Stock7 520
MOSFET (Metal Oxide)
60V
115mA (Ta)
5V, 10V
-
-
50pF @ 25V
±20V
-
150mW (Ta)
13.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
hot PCP1302-TD-H
ON Semiconductor

MOSFET P-CH 60V 3A SOT89

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 266 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89/PCP-1
  • Package / Case: TO-243AA
paquet: TO-243AA
Stock24 000
MOSFET (Metal Oxide)
60V
3A (Ta)
4V, 10V
2.6V @ 1mA
6.4nC @ 10V
262pF @ 20V
±20V
-
3.5W (Tc)
266 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
SOT-89/PCP-1
TO-243AA
hot FDPF18N20FT_G
Fairchild/ON Semiconductor

MOSFET N CH 200V 18A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock414 012
MOSFET (Metal Oxide)
200V
18A (Tc)
10V
5V @ 250µA
26nC @ 10V
1180pF @ 25V
±30V
-
35W (Tc)
140 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
hot MCH3476-TL-H
ON Semiconductor

MOSFET N-CH 20V 2A MCPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
paquet: 3-SMD, Flat Leads
Stock18 888
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4.5V
-
1.8nC @ 4.5V
128pF @ 10V
±12V
-
800mW (Ta)
125 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
BUK762R0-40C,118
Nexperia USA Inc.

MOSFET N-CH 40V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11323pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock15 036
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
4V @ 1mA
175nC @ 10V
11323pF @ 25V
±20V
-
333W (Tc)
2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF9321TRPBF
Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock750 684
MOSFET (Metal Oxide)
30V
15A (Ta)
4.5V, 10V
2.4V @ 50µA
98nC @ 10V
2590pF @ 25V
±20V
-
2.5W (Ta)
7.2 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
APT50M65JFLL
Microsemi Corporation

MOSFET N-CH 500V 58A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock6 432
MOSFET (Metal Oxide)
500V
58A
10V
5V @ 2.5mA
141nC @ 10V
7010pF @ 25V
±30V
-
520W (Tc)
65 mOhm @ 29A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
DN2625K4-G
Microchip Technology

MOSFET N-CH 250V 1.1A 3DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock45 660
MOSFET (Metal Oxide)
250V
1.1A (Tj)
0V
-
7.04nC @ 1.5V
1000pF @ 25V
±20V
Depletion Mode
-
3.5 Ohm @ 1A, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD036N04LGBTMA1
Infineon Technologies

MOSFET N-CH 40V 90A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Request a Quote
MOSFET (Metal Oxide)
40 V
90A (Tc)
4.5V, 10V
2V @ 45µA
78 nC @ 10 V
6300 pF @ 20 V
±20V
-
94W (Tc)
3.6mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
NTMFS5C612NT1G
onsemi

NTMFS5C612N - Single N Channel

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
paquet: -
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MOSFET (Metal Oxide)
60 V
35A (Ta), 230A (Tc)
10V
4V @ 250µA
60.2 nC @ 10 V
4830 pF @ 25 V
±20V
-
3.8W (Ta), 170W (Tc)
1.6mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
2SK3408-T1B-AT
Renesas Electronics Corporation

MOSFET N-CH 43V 1A SC96-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 43 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 500mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-96-3, Thin Mini Mold
  • Package / Case: SC-96
paquet: -
Request a Quote
MOSFET (Metal Oxide)
43 V
1A (Ta)
4V, 10V
2.5V @ 1mA
4 nC @ 10 V
230 pF @ 10 V
±20V
-
200mW (Ta)
195mOhm @ 500mA, 10V
150°C
Surface Mount
SC-96-3, Thin Mini Mold
SC-96
SCT4013DW7TL
Rohm Semiconductor

750V, 98A, 7-PIN SMD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 267W
  • Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7L
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
paquet: -
Stock2 241
SiCFET (Silicon Carbide)
750 V
98A (Tj)
18V
4.8V @ 30.8mA
170 nC @ 18 V
4580 pF @ 500 V
+21V, -4V
-
267W
16.9mOhm @ 58A, 18V
175°C (TJ)
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
JANSR2N7292
Harris Corporation

25A, 100V, 0.070 OHM, RAD HARD,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 552 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-254AA
  • Package / Case: TO-254-3, TO-254AA
paquet: -
Request a Quote
MOSFET (Metal Oxide)
100 V
25A (Tc)
10V
5V @ 1mA
552 nC @ 20 V
-
±20V
-
125W (Tc)
70mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-254AA
TO-254-3, TO-254AA
NVMFS6H864NLT1G
onsemi

MOSFET N-CH 80V 7A/22A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
paquet: -
Stock3 951
MOSFET (Metal Oxide)
80 V
7A (Ta), 22A (Tc)
4.5V, 10V
2V @ 20µA
9 nC @ 10 V
431 pF @ 40 V
±20V
-
3.5W (Ta), 33W (Tc)
29mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
FDD20AN06A0-F085
onsemi

MOSFET N-CH 60V 8A/45A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Request a Quote
MOSFET (Metal Oxide)
60 V
8A (Ta), 45A (Tc)
10V
4V @ 250µA
19 nC @ 10 V
950 pF @ 25 V
±20V
-
90W (Tc)
20mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
AO3453
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 2.6A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: 3-SMD, SOT-23-3 Variant
paquet: -
Request a Quote
MOSFET (Metal Oxide)
30 V
2.6A (Ta)
2.5V, 10V
1.4V @ 250µA
15 nC @ 10 V
260 pF @ 15 V
±12V
-
1.4W (Ta)
115mOhm @ 2.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
NTMFS1D3N04XMT1G
onsemi

40V T10M IN S08FL PACKAGE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2459 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
paquet: -
Request a Quote
MOSFET (Metal Oxide)
40 V
40A (Ta), 195A (Tc)
10V
3.5V @ 100µA
38.6 nC @ 10 V
2459 pF @ 25 V
±20V
-
90W (Tc)
1.3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads