Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock28 284 |
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MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 32 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 120 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 220W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Microsemi Corporation |
MOSFET N-CH 100V TO-3
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paquet: TO-204AA, TO-3 |
Stock4 672 |
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MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 210 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA | TO-204AA, TO-3 |
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IXYS |
MOSFET N-CH 500V 21A ISOPLUS220
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paquet: ISOPLUS220? |
Stock5 456 |
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MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 4V @ 4mA | 135nC @ 10V | 4200pF @ 25V | ±20V | - | 230W (Tc) | 230 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 6.7A TO-220F
|
paquet: TO-220-3 Full Pack |
Stock7 456 |
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MOSFET (Metal Oxide) | 250V | 6.7A (Tc) | 10V | 5V @ 250µA | 20nC @ 10V | 700pF @ 25V | ±30V | - | 45W (Tc) | 420 mOhm @ 3.35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 60V 80A TO-247
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paquet: TO-247-3 |
Stock18 852 |
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MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 250µA | 189nC @ 10V | 7600pF @ 25V | ±20V | - | 250W (Tc) | 10 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK
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paquet: 10-PolarPAK? (L) |
Stock2 032 |
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MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 160nC @ 10V | 7000pF @ 15V | ±20V | - | 5.2W (Ta), 125W (Tc) | 1.9 mOhm @ 23.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V 0.005A SOT-223
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paquet: TO-261-4, TO-261AA |
Stock5 120 |
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MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | - | - | 300pF @ 0V | ±20V | Depletion Mode | 2.5W (Ta) | 14 Ohm @ 50mA, 350mV | -40°C ~ 110°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 30V 25A ATPAK
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paquet: ATPAK (2 leads+tab) |
Stock173 724 |
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MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | - | 18.5nC @ 10V | 875pF @ 10V | ±20V | - | 30W (Tc) | 30 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 6.6A I2PAK
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2 000 |
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MOSFET (Metal Oxide) | 800V | 6.6A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1850pF @ 25V | ±30V | - | 3.13W (Ta), 167W (Tc) | 1.5 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 25V 30A 8-PQFN
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paquet: 8-PowerTDFN |
Stock6 672 |
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MOSFET (Metal Oxide) | 25V | 30A (Ta), 70A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 68nC @ 10V | 4350pF @ 13V | ±12V | - | 2.5W (Ta), 65W (Tc) | 1.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
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Microsemi Corporation |
MOSFET N-CH 600V 31A SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock5 760 |
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MOSFET (Metal Oxide) | 600V | 31A | 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | ±30V | - | 355W (Tc) | 150 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO-220F
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paquet: TO-220-3 Full Pack |
Stock8 316 |
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MOSFET (Metal Oxide) | 400V | 10.5A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 1090pF @ 25V | ±30V | - | 44W (Tc) | 530 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Texas Instruments |
MOSFET N-CH 100V 100A TO220-3
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paquet: TO-220-3 |
Stock213 912 |
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MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 3.3V @ 250µA | 38nC @ 10V | 3870pF @ 50V | ±20V | - | 214W (Tc) | 7.7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 12A POWERDI
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paquet: 8-PowerWDFN |
Stock4 896 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | ±20V | Schottky Diode (Body) | 890mW (Ta) | 10 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOT-523 PACKAG
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paquet: SOT-523 |
Stock4 160 |
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MOSFET (Metal Oxide) | 20V | 500mA | 4.5V | 1.2V @ 250µA | 750nC @ 4.5V | 100pF @ 16V | ±12V | - | 150mW | 850 mOhm @ 500mA, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Vishay Siliconix |
MOSFET N-CH 600V 80A TO247AC
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paquet: TO-247-3 |
Stock7 716 |
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MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 4V @ 250µA | 443nC @ 10V | 6900pF @ 100V | ±30V | - | 520W (Tc) | 30 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 28A
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paquet: TO-247-3 |
Stock19 776 |
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MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 5V @ 250µA | 54nC @ 10V | 2400pF @ 100V | ±25V | - | 210W (Tc) | 110 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 230MA DFN
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paquet: 3-XFDFN |
Stock648 240 |
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MOSFET (Metal Oxide) | 20V | 230mA (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | - | 14.1pF @ 15V | ±10V | - | 350mW (Ta) | 3 Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
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Nexperia USA Inc. |
MOSFET N-CH 60V SOT323
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paquet: SC-70, SOT-323 |
Stock49 464 |
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MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 5V, 10V | 2.1V @ 250µA | 0.43nC @ 4.5V | 17pF @ 10V | ±20V | - | 220mW (Ta), 1.06W (Tc) | 4.5 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET N-CH 30V .1A SOT416
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paquet: SC-75, SOT-416 |
Stock5 418 120 |
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MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 13pF @ 5V | ±20V | - | 150mW (Ta) | 8 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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onsemi |
40V T10M IN S08FL PACKAGE
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paquet: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 111A (Tc) | 10V | 3.5V @ 60µA | 22.1 nC @ 10 V | 1421 pF @ 20 V | ±20V | - | 53W (Tc) | 2.35mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Goford Semiconductor |
MOSFET N-CH 100V 33A TO-220F
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 33A (Tc) | 4.5V, 10V | 2.5V @ 250µA | - | - | ±20V | - | 20.8W (Tc) | 10.5mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Qorvo |
SICFET N-CH 1200V 34.5A TO247-3
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paquet: - |
Stock2 061 |
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SiCFET (Cascode SiCJFET) | 1200 V | 34.5A (Tc) | 12V | 6V @ 10mA | 46 nC @ 15 V | 1500 pF @ 100 V | ±25V | - | 254.2W (Tc) | 90mOhm @ 20A, 12V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON-34
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paquet: - |
Stock29 100 |
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MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.8V @ 63µA | 56 nC @ 10 V | 3860 pF @ 40 V | ±20V | - | 125W (Tc) | 4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Vishay Siliconix |
POWER MOSFET SUPER-247, 100 M @
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paquet: - |
Stock627 |
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MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 5V @ 250µA | 380 nC @ 10 V | 8110 pF @ 25 V | ±30V | - | 540W (Tc) | 100mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 40A DPAK
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paquet: - |
Stock12 039 |
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MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 6V, 10V | 3V @ 1mA | 83 nC @ 10 V | 4140 pF @ 10 V | +10V, -20V | - | 68W (Tc) | 9.1mOhm @ 20A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI333
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 5A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 14 nC @ 10 V | 740 pF @ 30 V | ±20V | - | 3W (Ta) | 50mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |