Page 1433 - Transistors - FET, MOSFET - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  1 433/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AUIRF7805Q
Infineon Technologies

MOSFET N CH 30V 13A 8-SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock5 808
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V
3V @ 250µA
31nC @ 5V
-
±12V
-
2.5W (Ta)
11 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7484TRPBF
Infineon Technologies

MOSFET N-CH 40V 14A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 7V
  • Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock4 272
MOSFET (Metal Oxide)
40V
14A (Ta)
7V
2V @ 250µA
100nC @ 7V
3520pF @ 25V
±8V
-
2.5W (Ta)
10 mOhm @ 14A, 7V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
NTB6448ANT4G
ON Semiconductor

MOSFET N-CH 100V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 912
MOSFET (Metal Oxide)
100V
80A (Tc)
10V
4V @ 250µA
120nC @ 10V
4500pF @ 25V
±20V
-
-
13 mOhm @ 76A, 10V
-
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTMFS4837NHT3G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3016pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 880mW (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
paquet: 8-PowerTDFN, 5 Leads
Stock36 000
MOSFET (Metal Oxide)
30V
10.2A (Ta), 75A (Tc)
4.5V, 11.5V
2.5V @ 250µA
23.8nC @ 4.5V
3016pF @ 12V
±20V
-
880mW (Ta), 48W (Tc)
5 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
IXTA180N085T
IXYS

MOSFET N-CH 85V 180A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 430W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7 040
MOSFET (Metal Oxide)
85V
180A (Tc)
10V
4V @ 250µA
170nC @ 10V
7500pF @ 25V
±20V
-
430W (Tc)
5.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFZ20
Vishay Siliconix

MOSFET N-CH 50V 15A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock16 428
MOSFET (Metal Oxide)
50V
15A (Tc)
10V
4V @ 250µA
17nC @ 10V
850pF @ 25V
±20V
-
40W (Tc)
100 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
PMZ250UN,315
Nexperia USA Inc.

MOSFET N-CH 20V 2.28A SOT883

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006-3
  • Package / Case: SC-101, SOT-883
paquet: SC-101, SOT-883
Stock5 152
MOSFET (Metal Oxide)
20V
2.28A (Tc)
1.5V, 4.5V
950mV @ 250µA
0.89nC @ 4.5V
45pF @ 20V
±8V
-
2.5W (Tc)
300 mOhm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006-3
SC-101, SOT-883
hot STP4NB50
STMicroelectronics

MOSFET N-CH 500V 3.8A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock95 460
MOSFET (Metal Oxide)
500V
3.8A (Tc)
10V
4V @ 250µA
21nC @ 10V
400pF @ 25V
±30V
-
80W (Tc)
2.8 Ohm @ 1.9A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
FCP380N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1665pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock6 544
MOSFET (Metal Oxide)
600V
10.2A (Tc)
10V
3.5V @ 250µA
40nC @ 10V
1665pF @ 25V
±20V
-
106W (Tc)
380 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot AOT500
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 33V 80A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 33V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock168 600
MOSFET (Metal Oxide)
33V
80A (Tc)
10V
3V @ 250µA
89nC @ 10V
5500pF @ 15V
-
-
115W (Tc)
5.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
NVMFS5C682NLWFT1G
ON Semiconductor

MOSFET N-CH 60V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock3 456
MOSFET (Metal Oxide)
60V
-
4.5V, 10V
2V @ 16µA
5nC @ 10V
410pF @ 25V
±20V
-
3.5W (Ta), 28W (Tc)
21 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
IPU80R1K4P7AKMA1
Infineon Technologies

MOSFET N-CH 800V 4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.05nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock9 516
MOSFET (Metal Oxide)
800V
4A (Tc)
10V
3.5V @ 700µA
10.05nC @ 10V
250pF @ 500V
±20V
Super Junction
32W (Tc)
1.4 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPU50R950CEAKMA1
Infineon Technologies

MOSFET N-CH 500V 4.3A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock19 260
MOSFET (Metal Oxide)
500V
4.3A (Tc)
13V
3.5V @ 100µA
10.5nC @ 10V
231pF @ 100V
±20V
-
53W (Tc)
950 mOhm @ 1.2A, 13V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
hot FDMC8588DC
Fairchild/ON Semiconductor

MOSFET N CH 25V 40A POWER33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 13V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool ? 33
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock13 200
MOSFET (Metal Oxide)
25V
40A (Tc)
4.5V, 10V
1.8V @ 250µA
12nC @ 10V
1695pF @ 13V
±12V
-
3W (Ta), 41W (Tc)
5 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool ? 33
8-PowerTDFN
CSD18563Q5AT
Texas Instruments

MOSFET N-CH 60V 100A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON (5x6)
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock19 440
MOSFET (Metal Oxide)
60V
100A (Ta)
4.5V, 10V
2.4V @ 250µA
20nC @ 10V
1500pF @ 30V
±20V
-
3.2W (Ta), 116W (Tc)
6.8 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON (5x6)
8-PowerTDFN
SQJA86EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 80V 30A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
paquet: PowerPAK? SO-8
Stock5 328
MOSFET (Metal Oxide)
80V
30A (Tc)
4.5V, 10V
2.5V @ 250µA
32nC @ 10V
1400pF @ 25V
±20V
-
48W (Tc)
19 mOhm @ 8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
BSZ105N04NS G
Infineon Technologies

MOSFET N-CH 40V 40A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 14µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock274 830
MOSFET (Metal Oxide)
40V
11A (Ta), 40A (Tc)
10V
4V @ 14µA
17nC @ 10V
1300pF @ 20V
±20V
-
2.1W (Ta), 35W (Tc)
10.5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
PMV15UNEAR
Nexperia USA Inc.

MOSFET N-CH 20V 7A TO236AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock35 055
MOSFET (Metal Oxide)
20 V
7A (Ta)
1.8V, 4.5V
900mV @ 250µA
17 nC @ 4.5 V
1220 pF @ 10 V
±8V
-
610mW (Ta), 8.3W (Tc)
19mOhm @ 7A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
DMP3007LK3-13
Diodes Incorporated

MOSFET P-CH 30V 18.5A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock18 258
MOSFET (Metal Oxide)
30 V
18.5A (Ta)
4.5V, 10V
2.8V @ 250µA
64.2 nC @ 10 V
2826 pF @ 15 V
±25V
-
1.5W (Ta)
7mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
2SJ583LS
onsemi

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CC-C2-B15-0322
CoolCAD

SiC Power MOSFET 1200V 12A

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V
  • Vgs (Max): +15V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-4
paquet: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
12A (Ta)
15V
3.2V @ 5mA
40 nC @ 15 V
1810 pF @ 200 V
+15V, -5V
-
100W (Tc)
135mOhm @ 10A, 15V
-40°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-4
IAUCN04S7N015ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-34
  • Package / Case: 8-PowerTDFN
paquet: -
Stock2 985
MOSFET (Metal Oxide)
40 V
120A
10V
-
-
-
-
-
-
-
-55°C ~ 175°C
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
SISH108DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 14A PPAK1212-8SH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8SH
  • Package / Case: PowerPAK® 1212-8SH
paquet: -
Stock17 949
MOSFET (Metal Oxide)
20 V
14A (Ta)
4.5V, 10V
2V @ 250µA
30 nC @ 4.5 V
-
±16V
-
1.5W (Ta)
4.9mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
PMH400UNEH
Nexperia USA Inc.

MOSFET N-CH 30V 900MA DFN0606-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 700mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN0606-3
  • Package / Case: 3-XFDFN
paquet: -
Stock58 818
MOSFET (Metal Oxide)
30 V
900mA (Ta)
1.5V, 4.5V
950mV @ 250µA
0.93 nC @ 4.5 V
4540 pF @ 15 V
±8V
-
360mW (Ta), 2.23W (Tc)
460mOhm @ 700mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
SIR4604LDP-T1-GE3
Vishay Siliconix

N-CHANNEL 60 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
paquet: -
Stock17 808
MOSFET (Metal Oxide)
60 V
15.6A (Ta), 51A (Tc)
4.5V, 10V
3V @ 250µA
28 nC @ 10 V
1180 pF @ 30 V
±20V
-
3.9W (Ta), 41.6W (Tc)
8.9mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
NX2020P1X
NXP

NX2020P1X

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
XP4024GEMT
YAGEO XSEMI

MOSFET N-CH 30V 26.1A 60A PMPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 26.1A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 36.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PMPAK® 5 x 6
  • Package / Case: 8-PowerLDFN
paquet: -
Stock3 000
MOSFET (Metal Oxide)
30 V
26.1A (Ta), 60A (Tc)
4.5V, 10V
2.5V @ 250µA
24 nC @ 4.5 V
2400 pF @ 15 V
±20V
-
5W (Ta), 36.7W (Tc)
4.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PMPAK® 5 x 6
8-PowerLDFN
CZDM1003N-BK
Central Semiconductor Corp

MOSFET N-CH 100V 3A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
paquet: -
Request a Quote
MOSFET (Metal Oxide)
100 V
3A (Ta)
10V
4V @ 250µA
15 nC @ 10 V
975 pF @ 25 V
20V
-
2W (Ta)
150mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA