Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 60V DIE ON WAFER
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paquet: - |
Stock7 728 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2 384 |
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MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 2V @ 50µA | 25nC @ 5V | 3110pF @ 15V | ±20V | - | 94W (Tc) | 4.6 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 21A D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock780 000 |
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MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | ±20V | - | 90W (Tc) | 80 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V TO252
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 784 |
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MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 3V @ 250µA | 13nC @ 4.5V | 1150pF @ 25V | ±20V | - | 6.5W (Ta), 40.8W (Tc) | 16 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20A 8-DFN
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paquet: 8-PowerSMD, Flat Leads |
Stock4 848 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta), 26A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28nC @ 10V | 1452pF @ 15V | ±12V | - | 3.1W (Ta), 35W (Tc) | 12.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 6A TO-220F
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paquet: TO-220-3 Full Pack |
Stock24 000 |
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MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 625pF @ 25V | ±30V | - | 38W (Tc) | 1 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 720 |
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MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | ±30V | - | 170W (Tc) | 750 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock121 788 |
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MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 270pF @ 25V | ±20V | - | 50W (Tc) | 7 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 110A D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock10 728 |
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MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | ±20V | - | 200W (Tc) | 8 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 550A DE475
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paquet: DE475 |
Stock3 120 |
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MOSFET (Metal Oxide) | 55V | 550A (Tc) | 10V | 4V @ 250µA | 595nC @ 10V | 40000pF @ 25V | ±20V | - | 600W (Tc) | 1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DE475 | DE475 |
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IXYS |
MOSFET N-CH 600V 15A I4-PAC
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paquet: i4-Pac?-5 |
Stock4 048 |
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MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | ±20V | - | - | 165 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 |
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IXYS |
MOSFET N-CH 200V 88A TO-264
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paquet: TO-264-3, TO-264AA |
Stock7 280 |
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MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 4V @ 4mA | 146nC @ 10V | 4150pF @ 25V | ±30V | - | 500W (Tc) | 30 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 24A SOP
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paquet: 8-PowerVDFN |
Stock6 416 |
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MOSFET (Metal Oxide) | 80V | 24A (Tc) | 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 40V | ±20V | - | 1.6W (Ta), 48W (Tc) | 12.3 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 0.2A X2-DFN1006
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paquet: 3-XFDFN |
Stock232 752 |
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MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 4.5V | 1V @ 250µA | - | 175pF @ 15V | ±10V | - | 350mW (Ta) | 5 Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
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paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3 008 |
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MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 4.5V @ 250µA | 6.1nC @ 10V | 138pF @ 25V | ±30V | - | 2.5W (Tc) | 10 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 27A TO263
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 704 |
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MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 1294pF @ 100V | ±30V | - | 357W (Tc) | 160 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM
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paquet: 3-SMD, Flat Leads |
Stock2 912 |
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MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | ±8V | - | 500mW (Ta) | 149 mOhm @ 600mA, 4V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Infineon Technologies |
MOSFET N CH 25V 16A S1
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paquet: DirectFET? Isometric S1 |
Stock49 572 |
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MOSFET (Metal Oxide) | 25V | 16A (Ta), 50A (Tc) | 4.5V, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | ±16V | - | 2.1W (Ta), 20W (Tc) | 5.2 mOhm @ 16A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET? Isometric S1 |
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Vishay Siliconix |
MOSFET P-CH 20V 16A MICROFOOT
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paquet: 6-MICRO FOOT? |
Stock4 453 260 |
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MOSFET (Metal Oxide) | 20V | 16A (Tc) | 1.8V, 4.5V | 1.3V @ 250µA | 30nC @ 5V | 1300pF @ 10V | ±12V | - | 2.77W (Ta), 13W (Tc) | 32 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-Micro Foot? | 6-MICRO FOOT? |
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Infineon Technologies |
MOSFET N-CH 30V 1.4A SOT23
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock298 170 |
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MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4.5V, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 94pF @ 15V | ±20V | - | 500mW (Ta) | 160 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V 95A LFPAK
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paquet: SC-100, SOT-669 |
Stock151 032 |
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MOSFET (Metal Oxide) | 30V | 95A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 19.4nC @ 10V | 1272pF @ 15V | ±20V | - | 64W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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IXYS |
MOSFET N-CH 300V 72A TO263AA
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paquet: - |
Stock57 |
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MOSFET (Metal Oxide) | 300 V | 72A (Tc) | 10V | 4.5V @ 1.5mA | 82 nC @ 10 V | 5400 pF @ 25 V | ±20V | - | 390W (Tc) | 19mOhm @ 36A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA (IXFA) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V
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paquet: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
MOSFET
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paquet: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 79 nC @ 10 V | 4600 pF @ 25 V | ±20V | - | 89W (Tj) | 12mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
HIGH POWER_NEW
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paquet: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
MOSFET N-CH 150V 35A D2PAK
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paquet: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 35A (Tc) | 10V | 4V @ 250µA | 36 nC @ 10 V | 2040 pF @ 25 V | ±20V | - | 150W (Tc) | 42mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
DIODE
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paquet: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 170mA (Ta) | 5V, 10V | 2.5V @ 250µA | 0.23 nC @ 4.5 V | 50 pF @ 25 V | ±20V | - | 370mW (Ta) | 5Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
PROTOTYPE
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paquet: - |
Request a Quote |
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MOSFET (Metal Oxide) | 25 V | 21A (Ta), 100A (Tc) | 2.5V, 8V | 1.1V @ 250µA | 7.1 nC @ 4.5 V | 1350 pF @ 12.5 V | +10V, -8V | - | 3W (Ta) | 4.7mOhm @ 20A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |