Page 1259 - Transistors - FET, MOSFET - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  1 259/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRFB3004GPBF
Infineon Technologies

MOSFET N-CH 40V 195A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock73 584
MOSFET (Metal Oxide)
40V
195A (Tc)
10V
4V @ 250µA
240nC @ 10V
9200pF @ 25V
±20V
-
380W (Tc)
1.75 mOhm @ 195A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF7700GTRPBF
Infineon Technologies

MOSFET P-CH 20V 8.6A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
paquet: 8-TSSOP (0.173", 4.40mm Width)
Stock4 640
MOSFET (Metal Oxide)
20V
8.6A (Ta)
2.5V, 4.5V
1.2V @ 250µA
89nC @ 5V
4300pF @ 15V
±12V
-
1.5W (Ta)
15 mOhm @ 8.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
BUK9C2R2-60EJ
NXP

MOSFET N-CH 60V D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
paquet: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Stock3 936
MOSFET (Metal Oxide)
60V
-
-
-
-
-
-
-
-
-
-
Surface Mount
D2PAK-7
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
hot SI7601DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 16A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
paquet: PowerPAK? 1212-8
Stock5 760
MOSFET (Metal Oxide)
20V
16A (Tc)
2.5V, 4.5V
1.6V @ 250µA
27nC @ 5V
1870pF @ 10V
±12V
-
3.8W (Ta), 52W (Tc)
19.2 mOhm @ 11A, 4.5V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
FQU5N50TU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock3 312
MOSFET (Metal Oxide)
500V
3.5A (Tc)
10V
5V @ 250µA
17nC @ 10V
610pF @ 25V
±30V
-
2.5W (Ta), 50W (Tc)
1.8 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot FQD2N50TF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock12 252
MOSFET (Metal Oxide)
500V
1.6A (Tc)
10V
5V @ 250µA
8nC @ 10V
230pF @ 25V
±30V
-
2.5W (Ta), 30W (Tc)
5.3 Ohm @ 800mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
ZVP0545GTC
Diodes Incorporated

MOSFET P-CH 450V 0.075A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 150 Ohm @ 50mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
paquet: TO-261-4, TO-261AA
Stock2 208
MOSFET (Metal Oxide)
450V
75mA (Ta)
10V
4.5V @ 1mA
-
120pF @ 25V
±20V
-
2W (Ta)
150 Ohm @ 50mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot NTGS3441T1
ON Semiconductor

MOSFET P-CH 20V 1.65A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 5V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
paquet: SOT-23-6
Stock1 112 160
MOSFET (Metal Oxide)
20V
1.65A (Ta)
2.5V, 4.5V
1.5V @ 250µA
14nC @ 4.5V
480pF @ 5V
±8V
-
500mW (Ta)
90 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
IPI60R099CPXKSA1
Infineon Technologies

MOSFET N-CH 60V 31A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock3 312
MOSFET (Metal Oxide)
600V
31A (Tc)
10V
3.5V @ 1.2mA
80nC @ 10V
2800pF @ 100V
±20V
-
255W (Tc)
99 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRF1404
Infineon Technologies

MOSFET N-CH 40V 202A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5669pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 121A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock6 672
MOSFET (Metal Oxide)
40V
160A (Tc)
10V
4V @ 250µA
196nC @ 10V
5669pF @ 25V
±20V
-
333W (Tc)
4 mOhm @ 121A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TK15A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 370 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock4 832
MOSFET (Metal Oxide)
600V
15A (Ta)
10V
4V @ 1mA
45nC @ 10V
2600pF @ 25V
±30V
-
50W (Tc)
370 mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
PMPB10XNEZ
Nexperia USA Inc.

MOSFET N-CH 20V SOT1220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2175pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
paquet: 6-UDFN Exposed Pad
Stock4 736
MOSFET (Metal Oxide)
20V
9A (Ta)
1.8V, 4.5V
900mV @ 250µA
34nC @ 4.5V
2175pF @ 10V
±12V
-
1.7W (Ta), 12.5W (Tc)
14 mOhm @ 9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN2020MD (2x2)
6-UDFN Exposed Pad
STF7LN80K5
STMicroelectronics

MOSFET N-CH 800V 5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock21 360
MOSFET (Metal Oxide)
800V
5A (Tc)
10V
5V @ 100µA
12nC @ 10V
270pF @ 100V
±30V
-
25W (Tc)
1.15 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
2SK3745LS-1E
ON Semiconductor

MOSFET N-CH 1500V 2A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3FS
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock5 472
MOSFET (Metal Oxide)
1500V
2A (Ta)
10V
-
37.5nC @ 10V
380pF @ 30V
±20V
-
2W (Ta), 35W (Tc)
13 Ohm @ 1A, 10V
150°C (TJ)
Through Hole
TO-220F-3FS
TO-220-3 Full Pack
PMV25ENEAR
Nexperia USA Inc.

MOSFET N-CH 30V TO-236AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 597pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 460mW (Ta), 6.94W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock5 984
MOSFET (Metal Oxide)
30V
5.5A (Ta)
4.5V, 10V
2.5V @ 250µA
18nC @ 10V
597pF @ 15V
±20V
-
460mW (Ta), 6.94W (Tc)
24 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
BUK965R8-100E,118
Nexperia USA Inc.

MOSFET N-CH 100V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17460pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock31 302
MOSFET (Metal Oxide)
100V
120A (Tc)
5V
2.1V @ 1mA
133nC @ 5V
17460pF @ 25V
±10V
-
357W (Tc)
5.8 mOhm @ 25A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK765R3-40E,118
Nexperia USA Inc.

MOSFET N-CH 40V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2772pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 137W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock34 548
MOSFET (Metal Oxide)
40V
75A (Tc)
10V
4V @ 1mA
35.5nC @ 10V
2772pF @ 25V
±20V
-
137W (Tc)
4.9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDP038AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock108 552
MOSFET (Metal Oxide)
60V
17A (Ta), 80A (Tc)
6V, 10V
4V @ 250µA
124nC @ 10V
6400pF @ 25V
±20V
-
310W (Tc)
3.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot DMG3402L-7
Diodes Incorporated

MOSFET N-CH 30V 4A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 464pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock6 928
MOSFET (Metal Oxide)
30V
4A (Ta)
2.5V, 10V
1.4V @ 250µA
11.7nC @ 10V
464pF @ 15V
±12V
-
1.4W (Ta)
52 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
UPA1716G-E1-A
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
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APT14M120S
Microchip Technology

MOSFET N-CH 1200V 14A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
paquet: -
Stock150
MOSFET (Metal Oxide)
1200 V
14A (Tc)
10V
5V @ 1mA
145 nC @ 10 V
4765 pF @ 25 V
±30V
-
625W (Tc)
1.1Ohm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
SI3139KEA-TP
Micro Commercial Co

P-CHANNEL MOSFET,SOT-523

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 150mW
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
paquet: -
Request a Quote
MOSFET (Metal Oxide)
20 V
600mA
1.8V, 4.5V
1.1V @ 250µA
0.86 nC @ 4.5 V
40 pF @ 16 V
±12V
-
150mW
850mOhm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
30N03A
UMW

TO-252 MOSFETS ROHS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock6 102
MOSFET (Metal Oxide)
30 V
90A (Tc)
4.5V, 10V
2.5V @ 250µA
41 nC @ 10 V
1963 pF @ 15 V
±20V
-
105W (Tc)
5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK1430
Sanyo

2SK1430 - 10A, 100V, 0.16OHM, N-

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
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NTMYS4D5N04CTWG
onsemi

MOSFET N-CH 40V 20A/80A 4LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK4 (5x6)
  • Package / Case: SOT-1023, 4-LFPAK
paquet: -
Stock9 000
MOSFET (Metal Oxide)
40 V
20A (Ta), 80A (Tc)
10V
3.5V @ 50µA
18 nC @ 10 V
1150 pF @ 25 V
20V
-
3.6W (Ta), 55W (Tc)
4.5mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
NVMTS001N06CLTXG
onsemi

T6 60V LL PQFN8*8 EXPANSI

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 56.9A (Ta), 398.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFNW (8.3x8.4)
  • Package / Case: 8-PowerTDFN
paquet: -
Stock16 929
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56.9A (Ta), 398.2A (Tc)
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Surface Mount
8-DFNW (8.3x8.4)
8-PowerTDFN
DMT3006LFVQ-7
Diodes Incorporated

MOSFET N-CH 30V 60A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock8 061
MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
3V @ 250µA
16.7 nC @ 10 V
1155 pF @ 15 V
±20V
-
1W (Ta)
7mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
2SK3436-TL-E-ON
onsemi

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
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