Page 125 - Transistors - FET, MOSFET - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  125/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AO4202_120
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock2 880
MOSFET (Metal Oxide)
30V
19A (Ta)
4.5V, 10V
2.3V @ 250µA
35nC @ 10V
2200pF @ 15V
±20V
Schottky Diode (Body)
3.1W (Ta)
5.3 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot IRLR130ATM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 13A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 6.5A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock60 000
MOSFET (Metal Oxide)
100V
13A (Tc)
5V
2V @ 250µA
24nC @ 5V
755pF @ 25V
±20V
-
2.5W (Ta), 46W (Tc)
120 mOhm @ 6.5A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4863N-1G
ON Semiconductor

MOSFET N-CH 25V 9.2A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock5 424
MOSFET (Metal Oxide)
25V
9.2A (Ta), 49A (Tc)
4.5V, 10V
2.5V @ 250µA
13.5nC @ 4.5V
990pF @ 12V
±20V
-
1.27W (Ta), 36.6W (Tc)
9.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot AUIRF3315STRL
Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock13 020
MOSFET (Metal Oxide)
150V
21A (Tc)
10V
4V @ 250µA
95nC @ 10V
1300pF @ 25V
±20V
-
3.8W (Ta), 94W (Tc)
82 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFX40N90P
IXYS

MOSFET N-CH PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock3 040
MOSFET (Metal Oxide)
900V
40A (Tc)
10V
6.5V @ 1mA
230nC @ 10V
14000pF @ 25V
±30V
-
960W (Tc)
230 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
AOB280L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 20.5A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11135pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock4 528
MOSFET (Metal Oxide)
80V
20.5A (Ta), 140A (Tc)
6V, 10V
3.4V @ 250µA
224nC @ 10V
11135pF @ 40V
±20V
-
2.1W (Ta), 333W (Tc)
2.2 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot AOTF7N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock107 064
MOSFET (Metal Oxide)
600V
7A (Tc)
10V
4.5V @ 250µA
28nC @ 10V
1035pF @ 25V
±30V
-
38.5W (Tc)
1.2 Ohm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
hot DMN3300U-7
Diodes Incorporated

MOSFET N-CH 30V 2A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock678 072
MOSFET (Metal Oxide)
30V
2A (Ta)
1.5V, 4.5V
1V @ 250µA
-
193pF @ 10V
±12V
-
700mW (Ta)
150 mOhm @ 4.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot MTD3055VL
Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock56 472
MOSFET (Metal Oxide)
60V
12A (Tc)
5V
2V @ 250µA
10nC @ 5V
570pF @ 25V
±20V
-
3.9W (Ta), 48W (Tc)
180 mOhm @ 6A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STP14NK50Z
STMicroelectronics

MOSFET N-CH 500V 14A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock17 172
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
4.5V @ 100µA
92nC @ 10V
2000pF @ 25V
±30V
-
150W (Tc)
380 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STF20N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock5 824
MOSFET (Metal Oxide)
950V
17.5A (Tc)
10V
5V @ 100µA
40nC @ 10V
1500pF @ 100V
±30V
-
40W (Tc)
330 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
R6020ENZC8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
paquet: TO-3P-3 Full Pack
Stock15 918
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4V @ 1mA
60nC @ 10V
1400pF @ 25V
±20V
-
120W (Tc)
196 mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
hot RSD100N10TL
Rohm Semiconductor

MOSFET N-CH 100V 10A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 133 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock111 792
MOSFET (Metal Oxide)
100V
10A (Ta)
4V, 10V
2.5V @ 1mA
18nC @ 10V
700pF @ 25V
±20V
-
20W (Tc)
133 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI1050X-T1-GE3
Vishay Siliconix

MOSFET N-CH 8V 1.34A SC-89-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 86 mOhm @ 1.34A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
paquet: SOT-563, SOT-666
Stock120 576
MOSFET (Metal Oxide)
8V
1.34A (Ta)
1.5V, 4.5V
900mV @ 250µA
11.6nC @ 5V
585pF @ 4V
±5V
-
236mW (Ta)
86 mOhm @ 1.34A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
AOW66412
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 260W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
paquet: -
Request a Quote
MOSFET (Metal Oxide)
40 V
45A (Ta), 120A (Tc)
4.5V, 10V
2.3V @ 250µA
100 nC @ 10 V
8320 pF @ 20 V
±20V
-
6.2W (Ta), 260W (Tc)
1.9mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
DMN3032LQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Request a Quote
MOSFET (Metal Oxide)
30 V
5.4A (Ta)
4.5V, 10V
2V @ 250µA
10.1 nC @ 10 V
481 pF @ 15 V
±20V
-
800mW
31mOhm @ 5.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
NSF040120L3A0Q
Nexperia USA Inc.

SIC MOSFET / 40MOHM / 1200V / TO

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Stock1 236
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SI2305CHE3-TP
Micro Commercial Co

MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 1.8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
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MOSFET (Metal Oxide)
8 V
5.4A (Ta)
2.5V, 4.5V
900mV @ 250µA
15 nC @ 4.5 V
740 pF @ 4 V
±8V
-
1.3W
90mOhm @ 2A, 1.8V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DI022P06D1
Diotec Semiconductor

IC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2098 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
60 V
22A (Tc)
4.5V, 10V
2.5V @ 250µA
35 nC @ 10 V
2098 pF @ 30 V
±20V
-
43W (Tc)
45mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SISS30ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 15.9A/54.7A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
paquet: -
Stock7 980
MOSFET (Metal Oxide)
80 V
15.9A (Ta), 54.7A (Tc)
7.5V, 10V
3.5V @ 250µA
30 nC @ 10 V
1295 pF @ 40 V
±20V
-
4.8W (Ta), 57W (Tc)
8.9mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SIR5607DP-T1-RE3
Vishay Siliconix

P-CHANNEL 60 V (D-S) MOSFET POWE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 22.2A (Ta), 90.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
paquet: -
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MOSFET (Metal Oxide)
60 V
22.2A (Ta), 90.9A (Tc)
4.5V, 10V
2.6V @ 250µA
112 nC @ 10 V
5020 pF @ 30 V
±20V
-
6.25W (Ta), 104W (Tc)
7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IPW65R280E6FKSA1
Infineon Technologies

MOSFET N-CH 650V 13.8A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
paquet: -
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MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
3.5V @ 440µA
45 nC @ 10 V
950 pF @ 100 V
±20V
-
104W (Tc)
280mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
2SK2624LS
onsemi

N-CHANNEL SILICON MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMTH61M8SPSQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
paquet: -
Stock7 500
MOSFET (Metal Oxide)
60 V
215A (Tc)
10V
4V @ 250µA
130.6 nC @ 10 V
8306 pF @ 30 V
±20V
-
3.2W (Ta), 167W (Tc)
1.6mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
IPC60R070CFD7X7SA1
Infineon Technologies

MOSFET N-CH HI POWER WAFER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RSJ400N06FRATL
Rohm Semiconductor

MOSFET N-CH 60V 40A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Stock3 654
MOSFET (Metal Oxide)
60 V
40A (Ta)
10V
3V @ 1mA
52 nC @ 10 V
2400 pF @ 10 V
±20V
-
50W (Ta)
16mOhm @ 40A, 10V
150°C
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVD3055L170T4G
onsemi

MOSFET N-CH 60V 9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
60 V
9A (Ta)
5V
2V @ 250µA
10 nC @ 5 V
275 pF @ 25 V
±15V
-
1.5W (Ta), 28.5W (Tj)
170mOhm @ 4.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
UJ3C120040K3S
Qorvo

SICFET N-CH 1200V 65A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 429W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
paquet: -
Stock2 133
SiCFET (Cascode SiCJFET)
1200 V
65A (Tc)
12V
6V @ 10mA
51 nC @ 15 V
1500 pF @ 100 V
±25V
-
429W (Tc)
45mOhm @ 40A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3