Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 12V 11.5A 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock6 448 |
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MOSFET (Metal Oxide) | 12V | 11.5A (Tc) | 1.8V, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | 3529pF @ 10V | ±8V | - | 2.5W (Ta) | 14 mOhm @ 11.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock15 948 |
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MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | ±20V | - | 200W (Tc) | 23 mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 8A 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock272 160 |
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MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 20nC @ 10V | 985pF @ 15V | ±20V | - | 2.5W (Ta) | 21 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET N-CH 500V 30A TO-247AD
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paquet: TO-247-3 |
Stock432 456 |
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MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 4.5V @ 4mA | 190nC @ 10V | 4925pF @ 25V | ±20V | - | 360W (Tc) | 160 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 11.4A I2PAK
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2 672 |
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MOSFET (Metal Oxide) | 400V | 11.4A (Tc) | 10V | 5V @ 250µA | 35nC @ 10V | 1400pF @ 25V | ±30V | - | 3.13W (Ta), 147W (Tc) | 480 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Diodes Incorporated |
MOSFET N-CH 200V 0.1A TO92-3
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paquet: E-Line-3 |
Stock6 960 |
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MOSFET (Metal Oxide) | 200V | 100mA (Ta) | 10V | 3V @ 1mA | - | 45pF @ 25V | ±20V | - | 625mW (Ta) | 25 Ohm @ 100mA, 10V | - | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.27A TO92-3
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paquet: E-Line-3 |
Stock2 592 |
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MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 625mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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IXYS |
MOSFET N-CH 150V 235A
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paquet: 24-PowerSMD, 21 Leads |
Stock4 080 |
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MOSFET (Metal Oxide) | 150V | 235A (Tc) | 10V | 5V @ 8mA | 715nC @ 10V | 47500pF @ 25V | ±20V | - | 680W (Tc) | 4.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 24-SMPD | 24-PowerSMD, 21 Leads |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 140A TO263
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3 600 |
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MOSFET (Metal Oxide) | 75V | 21.5A (Ta), 140A (Tc) | 6V, 10V | 3V @ 250µA | 215nC @ 10V | 10350pF @ 37.5V | ±20V | - | 2.1W (Ta), 500W (Tc) | 2.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 16V 17A 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock7 136 |
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MOSFET (Metal Oxide) | 16V | 17A (Ta) | 2.5V, 4.5V | 600mV @ 250µA (Min) | 70nC @ 4.5V | - | ±8V | - | 1.6W (Ta) | 3.3 mOhm @ 25A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 20A U8FL
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paquet: 8-PowerWDFN |
Stock6 000 |
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MOSFET (Metal Oxide) | 60V | 7.6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 16nC @ 10V | 850pF @ 25V | ±20V | - | 3.2W (Ta), 22W (Tc) | 24 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Nexperia USA Inc. |
MOSFET N-CH 20V 2.8A TO236AB
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock3 552 |
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MOSFET (Metal Oxide) | 20V | 2.8A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 291pF @ 10V | ±8V | - | 940mW (Ta) | 73 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 600V 24A TO-247
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paquet: TO-247-3 |
Stock540 000 |
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MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 4V @ 250µA | 37nC @ 10V | 1370pF @ 100V | ±25V | - | 170W (Tc) | 150 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6 112 |
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MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 516pF @ 100V | ±30V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
850V/65A ULTRA JUNCTION X-CLASS
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paquet: SOT-227-4, miniBLOC |
Stock4 688 |
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MOSFET (Metal Oxide) | 850V | 65A (Tc) | 10V | 5.5V @ 8mA | 230nC @ 10V | 8900pF @ 25V | ±30V | - | 830W (Tc) | 65 mOhm @ 33A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 1.8A 6MICROFET
|
paquet: 6-UFDFN Exposed Pad |
Stock307 464 |
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MOSFET (Metal Oxide) | 30V | 1.8A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | 75pF @ 15V | ±12V | Schottky Diode (Isolated) | 1.4W (Ta) | 299 mOhm @ 1.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (1.6x1.6) | 6-UFDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 30V 8.5A POWERDI
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paquet: 8-PowerWDFN |
Stock7 952 |
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MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 13.2nC @ 10V | 697pF @ 15V | ±25V | - | 1W (Ta) | 21 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4A TO220F
|
paquet: TO-220-3 Full Pack |
Stock23 550 |
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MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.5V @ 250µA | 18nC @ 10V | 615pF @ 25V | ±30V | - | 35W (Tc) | 2.2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 30V 44A LL LFPAK
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paquet: SC-100, SOT-669 |
Stock4 144 |
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MOSFET (Metal Oxide) | 30V | 44A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 10.4nC @ 10V | 681pF @ 15V | ±20V | - | 34W (Tc) | 9.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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IXYS |
MOSFET P-CH 200V 90A PLUS247
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paquet: TO-247-3 |
Stock5 984 |
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MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 4V @ 1mA | 205nC @ 10V | 12000pF @ 25V | ±20V | - | 890W (Tc) | 44 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 950V 9A TO220
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paquet: - |
Request a Quote |
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MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 3.5V @ 220µA | 23 nC @ 10 V | 712 pF @ 400 V | ±20V | - | 28W (Tc) | 750mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Comchip Technology |
MOSFET P-CH 30V SOT23
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paquet: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO220
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paquet: - |
Stock1 488 |
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MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 32W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
SICFET N-CH 1200V 24A TO247N
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paquet: - |
Stock453 |
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SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | 574 pF @ 800 V | +22V, -4V | - | 134W | 137mOhm @ 7.6A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 30V 32A 8SOIC
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paquet: - |
Stock24 549 |
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MOSFET (Metal Oxide) | 30 V | 32A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 110 nC @ 10 V | 5400 pF @ 15 V | ±20V | - | 7.1W (Tc) | 3.8mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 6.80A, 60V
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paquet: - |
Stock17 979 |
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MOSFET (Metal Oxide) | 60 V | 6.8A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 21 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 5.4W (Tc) | 60mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Renesas Electronics Corporation |
POWER FIELD-EFFECT TRANSISTOR
|
paquet: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
MOSFET N-CH 600V 10.2A TO220F-3
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 10.2A (Tc) | - | 3.5V @ 250µA | 45 nC @ 10 V | 1770 pF @ 25 V | - | - | 31W (Tc) | 380mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |