Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix |
MOSFET N-CH 20V 13A PPAK SO-8
|
paquet: PowerPAK? SO-8 |
Stock15 720 |
|
MOSFET (Metal Oxide) | 20V | 13A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 25nC @ 4.5V | - | ±16V | - | 1.7W (Ta) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
|
paquet: SC-100, SOT-669 |
Stock7 904 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | - | 2.15V @ 1mA | 64nC @ 10V | 3980pF @ 12V | - | - | - | 2 mOhm @ 15A, 10V | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 200V 12.6A TO-3P
|
paquet: TO-3P-3, SC-65-3 |
Stock103 464 |
|
MOSFET (Metal Oxide) | 200V | 12.6A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1200pF @ 25V | ±30V | - | 150W (Tc) | 470 mOhm @ 6.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 36A TO-3P
|
paquet: TO-3P-3, SC-65-3 |
Stock108 108 |
|
MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 4V @ 250µA | 51nC @ 10V | 1500pF @ 25V | ±25V | - | 163W (Tc) | 52 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3
|
paquet: E-Line-3 |
Stock3 344 |
|
MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 2V @ 1mA | - | 200pF @ 25V | ±40V | - | 750mW (Ta) | 9 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Vishay Siliconix |
MOSFET N-CH 250V 790MA SOT223
|
paquet: TO-261-4, TO-261AA |
Stock644 976 |
|
MOSFET (Metal Oxide) | 250V | 790mA (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 2W (Ta), 3.1W (Tc) | 2 Ohm @ 470mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 40V 70A TO263-3-2
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 000 |
|
MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 4V @ 26µA | 32nC @ 10V | 2550pF @ 25V | ±20V | - | 58W (Tc) | 6.2 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 800V 48A T-MAX
|
paquet: TO-247-3 Variant |
Stock5 344 |
|
MOSFET (Metal Oxide) | 800V | 49A (Tc) | 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | ±30V | - | 1135W (Tc) | 190 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
IXYS |
MOSFET N-CH 200V 96A TO-268
|
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock5 760 |
|
MOSFET (Metal Oxide) | 200V | 96A (Tc) | 10V | 5V @ 4mA | 145nC @ 10V | 4800pF @ 25V | ±20V | - | 600W (Tc) | 24 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 120V POWER56
|
paquet: 8-PowerTDFN |
Stock3 712 |
|
MOSFET (Metal Oxide) | 120V | 13.5A (Ta), 102A (Tc) | 6V, 10V | 4V @ 250µA | 64nC @ 10V | 4585pF @ 60V | ±20V | - | 3.3W (Ta), 187W (Tc) | 7.2 mOhm @ 13.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 250V 450MA 4-DIP
|
paquet: 4-DIP (0.300", 7.62mm) |
Stock53 700 |
|
MOSFET (Metal Oxide) | 250V | 450mA (Ta) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 1W (Ta) | 2 Ohm @ 270mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
ON Semiconductor |
MOSFET N-CH 40V 172A SO8FL
|
paquet: 8-PowerTDFN |
Stock3 824 |
|
MOSFET (Metal Oxide) | 40V | 29A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 113nC @ 10V | 5880pF @ 25V | ±20V | - | 3.8W (Ta), 158W (Tc) | 2.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Sanken |
MOSFET N-CH 40V 85A TO-263
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4 640 |
|
MOSFET (Metal Oxide) | 40V | 85A (Tc) | 4.5V, 10V | 2.5V @ 1.5mA | 97.6nC @ 10V | 6200pF @ 25V | ±20V | - | 135W (Tc) | 3 mOhm @ 82.5A, 10V | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
paquet: TO-220-3 Full Pack, Isolated Tab |
Stock7 088 |
|
MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 4V @ 250µA | 49nC @ 10V | 1969pF @ 25V | ±30V | - | 40.3W (Tc) | 1.9 Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
STMicroelectronics |
MOSFET N-CH 650V 2.3A POWERFLAT
|
paquet: 8-PowerVDFN |
Stock3 632 |
|
MOSFET (Metal Oxide) | 650V | 2.3A (Tc) | 10V | 4V @ 250µA | 5nC @ 10V | 155pF @ 100V | ±25V | - | 22W (Tc) | 1.8 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (3.3x3.3) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 8V 24V U-DFN2020-6
|
paquet: 6-UDFN Exposed Pad |
Stock6 512 |
|
MOSFET (Metal Oxide) | 20V | 8.1A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 20.5nC @ 4.5V | 1808pF @ 15V | ±8V | - | 2.03W (Ta) | 29 mOhm @ 6.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
Nexperia USA Inc. |
MOSFET N-CH 200V 39A D2PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4 336 |
|
MOSFET (Metal Oxide) | 200V | 39A (Tc) | 10V | 4V @ 1mA | 96nC @ 10V | 3750pF @ 25V | ±20V | - | 250W (Tc) | 57 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 650V 4.5A TO-220FP
|
paquet: TO-220-3 Full Pack |
Stock362 616 |
|
MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 4.5V @ 50µA | 35nC @ 10V | 680pF @ 25V | ±30V | - | 25W (Tc) | 1.8 Ohm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2 416 |
|
MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | ±30V | - | 60W (Tc) | 1.05 Ohm @ 2.9A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 75V 209A TO247AC
|
paquet: TO-247-3 |
Stock13 392 |
|
MOSFET (Metal Oxide) | 75V | 209A (Tc) | 10V | 4V @ 250µA | 620nC @ 10V | 13000pF @ 25V | ±20V | - | 470W (Tc) | 4.5 mOhm @ 125A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB
|
paquet: TO-220-3 |
Stock5 792 |
|
MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | ±20V | - | 150W (Tc) | 77 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220-FP
|
paquet: - |
Stock552 |
|
MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 4.5V @ 630µ | 37 nC @ 10 V | 1750 pF @ 100 V | ±20V | - | 34W (Tc) | 190mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
E SERIES POWER MOSFET D2PAK (TO-
|
paquet: - |
Stock5 196 |
|
MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 5V @ 250µA | 63 nC @ 10 V | 2557 pF @ 100 V | ±30V | - | 227W (Tc) | 80mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
HIGH POWER_NEW
|
paquet: - |
Stock360 |
|
MOSFET (Metal Oxide) | 950 V | 36.5A | 10V | - | 141 nC @ 10 V | - | ±20V | - | 227W | - | -55°C ~ 150°C | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
Fairchild Semiconductor |
SMALL SIGNAL N-CHANNEL MOSFET
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 63 nC @ 5 V | 5103 pF @ 15 V | ±16V | - | 1W (Ta) | 7mOhm @ 14.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 31A (Ta) | 4.5V, 10V | 2V @ 250µA | 63 nC @ 10 V | 4860 pF @ 30 V | ±20V | - | 3.9W (Ta) | 1.8mOhm @ 49A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
MOSFET P-CHANNEL 400V
|
paquet: - |
Stock12 249 |
|
MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 4V @ 250µA | 13 nC @ 10 V | 270 pF @ 25 V | ±20V | - | 50W (Tc) | 7Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 60V 15.5A/80A PWRDI
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 15.5A (Ta), 80A (Tc) | 4.5V, 10V | 3V @ 250µA | 41.3 nC @ 10 V | 2090 pF @ 30 V | ±20V | - | 2.9W (Ta), 75W (Tc) | 8mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type Q) | 8-PowerTDFN |