Page 126 - Transistors - FET, MOSFET - RF | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - RF

Dossiers 3 855
Page  126/138
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA212401E V4
Infineon Technologies

FET RF 65V 2.14GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
paquet: 2-Flatpack, Fin Leads
Stock5 488
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads
H-36260-2
PTFA192401EV4R250FTMA1
Infineon Technologies

FET RF 65V 1.96GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 16dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
paquet: 2-Flatpack, Fin Leads
Stock7 984
1.96GHz
16dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads
H-36260-2
MRF8S21100HR3
NXP

FET RF 65V 2.17GHZ NI780H

  • Transistor Type: N-Channel
  • Frequency: 2.17GHz
  • Gain: 18.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
paquet: NI-780
Stock2 720
2.17GHz
18.3dB
28V
-
-
700mA
24W
65V
NI-780
NI-780
MRF21085LSR5
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 19W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
paquet: NI-780S
Stock7 008
2.11GHz ~ 2.17GHz
13.6dB
28V
-
-
1A
19W
65V
NI-780S
NI-780S
hot MRF6S19100HR3
NXP

FET RF 68V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 16.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
paquet: NI-780
Stock4 624
1.99GHz
16.1dB
28V
-
-
900mA
22W
68V
NI-780
NI-780
MRF5S9101MBR1
NXP

FET RF 68V 960MHZ TO2724

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 100W
  • Voltage - Rated: 68V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
paquet: TO-272BB
Stock4 176
960MHz
17.5dB
26V
-
-
700mA
100W
68V
TO-272BB
TO-272 WB-4
MRFG35010NR5
NXP

FET RF 15V 3.55GHZ

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 9W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
paquet: PLD-1.5
Stock6 640
3.55GHz
10dB
12V
-
-
180mA
9W
15V
PLD-1.5
PLD-1.5
2N5953
Fairchild/ON Semiconductor

JFET N-CH 30V 5MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 5mA
  • Noise Figure: 2dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock2 880
1kHz
-
15V
5mA
2dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot J310
ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: 16dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock3 696
100MHz
16dB
10V
60mA
-
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PTFB211501FV1R250XTMA1
Infineon Technologies

FET RF 65V 2.17GHZ H37248-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
paquet: 2-Flatpack, Fin Leads, Flanged
Stock5 424
2.17GHz
18dB
30V
-
-
1.2A
40W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
3135GN-100M
Microsemi Corporation

TRANSISTOR GAN 55-QP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock7 696
-
-
-
-
-
-
-
-
-
-
MRF8P8300HSR6
NXP

FET RF 2CH 70V 820MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 820MHz
  • Gain: 20.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 96W
  • Voltage - Rated: 70V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
paquet: NI-1230S
Stock2 704
820MHz
20.9dB
28V
-
-
2A
96W
70V
NI-1230S
NI-1230S
BLF10M6LS200U
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
paquet: SOT-502B
Stock5 056
871.5MHz ~ 891.5MHz
20dB
28V
-
-
1.4A
40W
65V
SOT-502B
SOT502B
BLF6G27L-50BN,112
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT1112A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 430mA
  • Power - Output: 3W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112A
  • Supplier Device Package: CDFM6
paquet: SOT-1112A
Stock3 232
2.5GHz ~ 2.7GHz
16.5dB
28V
-
-
430mA
3W
65V
SOT-1112A
CDFM6
BLF6G38S-25,118
Ampleon USA Inc.

RF FET LDMOS 65V 15DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 8.2A
  • Noise Figure: -
  • Current - Test: 225mA
  • Power - Output: 4.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: CDFM2
paquet: SOT-608B
Stock4 992
3.4GHz ~ 3.6GHz
15dB
28V
8.2A
-
225mA
4.5W
65V
SOT-608B
CDFM2
BLP8G20S-80PY
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT12231

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.88GHz ~ 1.92GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1223-1
  • Supplier Device Package: 4-HSOPF
paquet: SOT-1223-1
Stock6 144
1.88GHz ~ 1.92GHz
17.5dB
28V
-
-
300mA
10W
65V
SOT-1223-1
4-HSOPF
PD85015-E
STMicroelectronics

FET RF 40V 870MHZ

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16dB
  • Voltage - Test: 13.6V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
paquet: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Stock4 144
870MHz
16dB
13.6V
5A
-
150mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
hot ATF-551M4-TR1
Broadcom Limited

IC TRANS E-PHEMT GAAS MINIPAK

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 2.7V
  • Current Rating: 100mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: 14.6dBm
  • Voltage - Rated: 5V
  • Package / Case: 0505 (1412 Metric)
  • Supplier Device Package: MiniPak 1412
paquet: 0505 (1412 Metric)
Stock1 305 216
2GHz
17.5dB
2.7V
100mA
0.5dB
10mA
14.6dBm
5V
0505 (1412 Metric)
MiniPak 1412
ATF-38143-TR2G
Broadcom Limited

FET RF 4.5V 2GHZ SOT343

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 16dB
  • Voltage - Test: 2V
  • Current Rating: 145mA
  • Noise Figure: 0.4dB
  • Current - Test: 10mA
  • Power - Output: 12dBm
  • Voltage - Rated: 4.5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
paquet: SC-82A, SOT-343
Stock7 168
2GHz
16dB
2V
145mA
0.4dB
10mA
12dBm
4.5V
SC-82A, SOT-343
SOT-343
NPT1010B
M/A-Com Technology Solutions

HEMT N-CH 28V 100W DC-2000MHZ

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 2GHz
  • Gain: 19.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: -
  • Voltage - Rated: 100V
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock6 448
0Hz ~ 2GHz
19.7dB
28V
-
-
700mA
-
100V
-
-
PD55025TR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 14.5dB
  • Voltage - Test: 12.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 25W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
paquet: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Stock5 520
500MHz
14.5dB
12.5V
7A
-
200mA
25W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
BLC8G22LS-450AVY
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT12583

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 85W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-3
  • Supplier Device Package: DFM6
paquet: SOT-1258-3
Stock5 328
2.11GHz ~ 2.17GHz
14dB
28V
-
-
1A
85W
65V
SOT-1258-3
DFM6
CGH60008D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 8W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: Die
Stock6 012
6GHz
15dB
28V
-
-
100mA
8W
84V
Die
Die
BLC10G19XS-551AVY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-5

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 2GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 370 mA
  • Power - Output: 550W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-5
  • Supplier Device Package: SOT1258-5
paquet: -
Request a Quote
1.93GHz ~ 2GHz
15dB
30 V
2.8µA
-
370 mA
550W
65 V
SOT-1258-5
SOT1258-5
PXAC201602FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.02GHz
  • Gain: 17.7dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360 mA
  • Power - Output: 22.5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
paquet: -
Request a Quote
2.02GHz
17.7dB
28 V
-
-
360 mA
22.5W
65 V
H-37248-4
H-37248-4
TAV1-541
Mini-Circuits

RF MOSFET E-PHEMT 3V TE2769

  • Transistor Type: E-pHEMT
  • Frequency: 45MHz ~ 6GHz
  • Gain: 18.6dB
  • Voltage - Test: 3 V
  • Current Rating: -
  • Noise Figure: 1.4dB
  • Current - Test: 60 mA
  • Power - Output: 18.6dBm
  • Voltage - Rated: 5 V
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: TE2769
paquet: -
Stock2 790
45MHz ~ 6GHz
18.6dB
3 V
-
1.4dB
60 mA
18.6dBm
5 V
4-SMD, No Lead
TE2769
BLP15M9S30GXY
Ampleon USA Inc.

RF MOSFET LDMOS 32V TO270

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 19.3dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 30W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2G-1
paquet: -
Request a Quote
2GHz
19.3dB
32 V
1.4µA
-
200 mA
30W
65 V
TO-270BA
TO-270-2G-1
UPA608T-0-T1-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
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