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Transistors - FET, MOSFET - Matrices

Dossiers 5 684
Page  87/203
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF5810TR
Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
  • Power - Max: 960mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
paquet: SOT-23-6 Thin, TSOT-23-6
Stock3 328
Logic Level Gate
20V
2.9A
90 mOhm @ 2.9A, 4.5V
1.2V @ 250µA
9.6nC @ 4.5V
650pF @ 16V
960mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot SQJ962EP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 8A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
  • Power - Max: 25W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
paquet: PowerPAK? SO-8 Dual
Stock32 892
Logic Level Gate
60V
8A
60 mOhm @ 4.3A, 10V
2.5V @ 250µA
14nC @ 10V
475pF @ 25V
25W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
SI5903DC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
paquet: 8-SMD, Flat Lead
Stock5 504
Logic Level Gate
20V
2.1A
155 mOhm @ 2.1A, 4.5V
600mV @ 250µA (Min)
6nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
GWM160-0055X1-SL
IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
paquet: 17-SMD, Flat Leads
Stock4 432
Standard
55V
150A
3.3 mOhm @ 100A, 10V
4.5V @ 1mA
105nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Flat Leads
ISOPLUS-DIL?
SI6928DQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: 8-TSSOP (0.173", 4.40mm Width)
Stock3 984
Logic Level Gate
30V
4A
35 mOhm @ 4A, 10V
1V @ 250µA
14nC @ 5V
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI1033X-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 0.145A SOT563F

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 145mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
paquet: SOT-563, SOT-666
Stock324 000
Logic Level Gate
20V
145mA
8 Ohm @ 150mA, 4.5V
1.2V @ 250µA
1.5nC @ 4.5V
-
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
FDR8305N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4.5A SSOT-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: SuperSOT?-8
paquet: 8-SMD, Gull Wing
Stock3 216
Logic Level Gate
20V
4.5A
22 mOhm @ 4.5A, 4.5V
1.5V @ 250µA
23nC @ 4.5V
1600pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Gull Wing
SuperSOT?-8
APTC60DSKM45T1G
Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

  • FET Type: 2 N Channel (Dual Buck Chopper)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
paquet: SP1
Stock3 072
Super Junction
600V
49A
45 mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
hot DMP3056LSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 6.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock634 416
Logic Level Gate
30V
6.9A
45 mOhm @ 6A, 10V
2.1V @ 250µA
13.7nC @ 10V
722pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ECH8657-TL-H
ON Semiconductor

MOSFET 2N-CH 35V 4.5A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
paquet: 8-SMD, Flat Lead
Stock36 000
Logic Level Gate
35V
4.5A
59 mOhm @ 2A, 10V
-
4.5nC @ 10V
230pF @ 20V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
QS8M11TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A TSMT8

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
paquet: 8-SMD, Flat Lead
Stock2 896
-
30V
3.5A
-
-
-
-
-
-
Surface Mount
8-SMD, Flat Lead
TSMT8
hot AO4803A
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock895 164
Logic Level Gate
30V
5A
46 mOhm @ 5A, 10V
2.5V @ 250µA
11nC @ 10V
520pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot NTJD4158CT1G
ON Semiconductor

MOSFET N/P-CH 30V/20V SOT-363

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock3 710 988
Logic Level Gate
30V, 20V
250mA, 880mA
1.5 Ohm @ 10mA, 4.5V
1.5V @ 100µA
1.5nC @ 5V
33pF @ 5V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot SI4948BEY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock157 068
Logic Level Gate
60V
2.4A
120 mOhm @ 3.1A, 10V
3V @ 250µA
22nC @ 10V
-
1.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC2041UFDB-7
Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
paquet: 6-UDFN Exposed Pad
Stock5 920
Standard
20V
4.7A, 3.2A
40 mOhm @ 4.2A, 4.5V
1.4V @ 250µA
15nC @ 8V
713pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot IRF8915TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 8.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.9A
  • Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock436 596
Logic Level Gate
20V
8.9A
18.3 mOhm @ 8.9A, 10V
2.5V @ 250µA
7.4nC @ 4.5V
540pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot CSD87330Q3D
Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-LSON (3.3x3.3)
paquet: 8-PowerLDFN
Stock203 400
Logic Level Gate
30V
20A
-
2.1V @ 250µA
5.8nC @ 4.5V
900pF @ 15V
6W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
8-LSON (3.3x3.3)
DMN62D2UDW-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: -
Request a Quote
-
60V
340mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
GSFK0300
Good-Ark Semiconductor

MOSFET 2N-CH 30V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V
  • Power - Max: 275mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: -
Stock8 034
-
30V
800mA (Tc)
450mOhm @ 300mA, 4.5V
1.2V @ 250µA
5.2nC @ 4.5V
146pF @ 15V
275mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SIA938DJT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
  • Power - Max: 1.9W (Ta), 7.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
paquet: -
Stock35 379
-
20V
4.5A (Ta), 4.5A (Tc)
21.5mOhm @ 5A, 10V
1.5V @ 250µA
11.5nC @ 10V
425pF @ 10V
1.9W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
IRF7313TRPBFXTMA1
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8DSO-902

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-902
paquet: -
Stock22 074
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30V
6.5A (Ta)
29mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-902
FF6MR12W2M1HPB11BPSA1
Infineon Technologies

SIC 2N-CH 1200V 200A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
paquet: -
Stock54
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1200V (1.2kV)
200A (Tj)
5.63mOhm @ 200A, 15V
5.55V @ 80mA
496nC @ 15V
14700pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MTC120WX55GD-SMD
IXYS

MOSFET 6N-CH 55V 150A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
55V
150A (Tc)
3.1mOhm @ 100A, 10V
4V @ 1mA
100nC @ 10V
6970pF @ 25V
-
-55°C ~ 175°C (TJ)
-
-
-
DF419MR20W3M1HFB11BPSA1
Infineon Technologies

MOSFET 4N-CH 2000V 50A AG-EASY3B

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 2000V (2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
  • Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 34mA
  • Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY3B
paquet: -
Stock3
-
2000V (2kV)
50A (Tj)
26.5mOhm @ 60A, 18V
5.15V @ 34mA
234nC @ 18V
7240pF @ 1.2kV
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY3B
FF3MR12KM1HPHPSA1
Infineon Technologies

FF3MR12KM1HPHPSA1

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 220A
  • Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
  • Vgs(th) (Max) @ Id: 5.1V @ 112mA
  • Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MMHB
paquet: -
Request a Quote
-
1200V (1.2kV)
220A
4.44mOhm @ 280A, 18V
5.1V @ 112mA
800nC @ 18V
24200pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-62MMHB
EPC2104
EPC

GANFET 2N-CH 100V 23A DIE

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Stock13 416
-
100V
23A
6.3mOhm @ 20A, 5V
2.5V @ 5.5mA
7nC @ 5V
800pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
DMC3732UVTQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
  • Power - Max: 540mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
paquet: -
Request a Quote
-
30V
1.1A (Ta), 700mA (Ta)
460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
0.95V @ 250µA, 1.1V @ 250µA
0.9nC @ 4.5V, 1.6nC @ 8V
40.8pF @ 25V, 54pF @ 15V
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
LP8M3FP8TB1
Rohm Semiconductor

MOSFET N-CH SOP8G

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
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