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Transistors - FET, MOSFET - Matrices

Dossiers 5 684
Page  79/203
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRFHE4250DTRPBF
Infineon Technologies

MOSFET 2N-CH 25V 86A/303A PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 86A, 303A
  • Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V
  • Power - Max: 156W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 32-PowerWFQFN
  • Supplier Device Package: 32-PQFN (6x6)
paquet: 32-PowerWFQFN
Stock4 400
Logic Level Gate
25V
86A, 303A
2.75 mOhm @ 27A, 10V
2.1V @ 35µA
20nC @ 4.5V
1735pF @ 13V
156W
-55°C ~ 150°C (TJ)
Surface Mount
32-PowerWFQFN
32-PQFN (6x6)
APTC60DDAM45CT1G
Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
paquet: SP1
Stock2 096
Standard
600V
49A
45 mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM10DHM09T3G
Microsemi Corporation

MOSFET 2N-CH 100V 139A SP3

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 139A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
paquet: SP3
Stock7 984
Standard
100V
139A
10 mOhm @ 69.5A, 10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
NVMD6N03R2G
ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
  • Power - Max: 1.29W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock3 472
Logic Level Gate
30V
6A
32 mOhm @ 6A, 10V
2.5V @ 250µA
30nC @ 10V
950pF @ 24V
1.29W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4973DY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 5.8A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock6 352
Logic Level Gate
30V
5.8A
23 mOhm @ 7.6A, 10V
3V @ 250µA
56nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO4619
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.4A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock302 916
Logic Level Gate
30V
-
24 mOhm @ 7.4A, 10V
2.6V @ 250µA
7.2nC @ 10V
448pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI5509DC-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 6.1A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
  • Power - Max: 4.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
paquet: 8-SMD, Flat Lead
Stock13 512
Logic Level Gate
20V
6.1A, 4.8A
52 mOhm @ 5A, 4.5V
2V @ 250µA
6.6nC @ 5V
455pF @ 10V
4.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI4974DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock466 512
Logic Level Gate
30V
6A, 4.4A
19 mOhm @ 8A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTHD4401PT1
ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
paquet: 8-SMD, Flat Lead
Stock2 000
Logic Level Gate
20V
2.1A
155 mOhm @ 2.1A, 4.5V
1.2V @ 250µA
6nC @ 4.5V
300pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
PMWD20XN,118
NXP

MOSFET 2N-CH 20V 10.4A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 16V
  • Power - Max: 4.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: 8-TSSOP (0.173", 4.40mm Width)
Stock3 552
Logic Level Gate
20V
10.4A
22 mOhm @ 4.2A, 10V
1.5V @ 1mA
11.6nC @ 4.5V
740pF @ 16V
4.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
APTC60HM70BT3G
Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
paquet: SP3
Stock4 304
Logic Level Gate
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
700pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
SP8J1FU6TB
Rohm Semiconductor

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock3 280
Logic Level Gate
30V
5A
42 mOhm @ 5A, 10V
2.5V @ 1mA
16nC @ 5V
1400pF @ 10V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
PMDPB95XNE2X
Nexperia USA Inc.

MOSFET ARRAY 2NCH 30V DFN2020-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V
  • Power - Max: 510mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
paquet: 6-UDFN Exposed Pad
Stock4 880
Standard
30V
2.7A (Ta)
99 mOhm @ 2.8A, 4.5V
1.25V @ 250µA
4.5nC @ 4.5V
258pF @ 15V
510mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
6-HUSON (2x2)
hot DMP2066LSD-13
Diodes Incorporated

MOSFET 2P-CH 20V 5.8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock42 012
Logic Level Gate
20V
5.8A
40 mOhm @ 4.6A, 4.5V
1.2V @ 250µA
10.1nC @ 4.5V
820pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FC6946010R
Panasonic Electronic Components

MOSFET 2N-CH 60V 0.1A SSMINI6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Power - Max: 125mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
paquet: SOT-563, SOT-666
Stock302 994
Logic Level Gate
60V
100mA
12 Ohm @ 10mA, 4V
1.5V @ 1µA
-
12pF @ 3V
125mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMini6-F3-B
PJX8601_R1_00001
Panjit International Inc.

MOSFET N/P-CH 20V 0.5A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
paquet: -
Stock10 878
-
20V
500mA (Ta)
400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
900mV @ 250µA, 1V @ 250µA
1.4nC @ 4.5V
67pF @ 10V, 38pF @ 10V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
MCQD08P06YA-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
  • Power - Max: 1.6W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Request a Quote
-
60V
8A (Ta)
75mOhm @ 4.3A, 10V
2.5V @ 250µA
10nC @ 10V
500pF @ 30V
1.6W (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SI4511DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: -
Request a Quote
Logic Level Gate
20V
7.2A, 4.6A
14.5mOhm @ 9.6A, 10V
1.8V @ 250µA
18nC @ 4.5V
-
1.1W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMN2710UV-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.92A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
paquet: -
Stock4 629
-
20V
920mA (Ta)
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V
42pF @ 16V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SIS932EDN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK 1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Power - Max: 2.6W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
paquet: -
Stock8 529
-
30V
6A (Tc)
22mOhm @ 10A, 4.5V
1.4V @ 250µA
14nC @ 4.5V
1000pF @ 15V
2.6W (Ta), 23W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
FW256-TL-E-ON
onsemi

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
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DMN6066SSDQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 3.3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
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-
60V
3.3A (Ta)
66mOhm @ 4.5A, 10V
3V @ 250µA
10.3nC @ 10V
502pF @ 30V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
PJQ5846_R2_00001
Panjit International Inc.

MOSFET 2N-CH 40V 9.5A/40A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
  • Power - Max: 1.7W (Ta), 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
paquet: -
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40V
9.5A (Ta), 40A (Tc)
10.5mOhm @ 8A, 10V
2.5V @ 250µA
22nC @ 10V
1258pF @ 25V
1.7W (Ta), 32W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
SSM6N16FE-L3F
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: -
Stock23 130
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20V
100mA (Ta)
3Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
150mW (Ta)
150°C
Surface Mount
SOT-563, SOT-666
ES6
DMC3732UVT-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
  • Power - Max: 540mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
paquet: -
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30V
1.1A (Ta), 700mA (Ta)
460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
0.95V @ 250µA, 1.1V @ 250µA
0.9nC @ 4.5V, 1.6nC @ 8V
40.8pF @ 25V, 54pF @ 15V
540mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
CAB008A12GM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 182A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 46mA
  • Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
paquet: -
Stock132
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1200V (1.2kV)
182A (Tj)
10.4mOhm @ 150A, 15V
3.6V @ 46mA
472nC @ 15V
13600pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
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MSCSM170DUM039AG
Microchip Technology

SIC 2N-CH 1700V 523A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
  • Power - Max: 2400W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
paquet: -
Stock9
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1700V (1.7kV)
523A (Tc)
5mOhm @ 270A, 20V
3.3V @ 22.5mA
1602nC @ 20V
29700pF @ 1000V
2400W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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MMFTP6312D
Diotec Semiconductor

MOSFET SOT26 P -20V 0.115OHM

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: SOT-26
paquet: -
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2.3A
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-
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Surface Mount
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SOT-26