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Transistors - FET, MOSFET - Matrices

Dossiers 5 684
Page  197/203
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SI4834BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock364 128
Logic Level Gate
30V
5.7A
22 mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM100TDU35PG
Microsemi Corporation

MOSFET 6N-CH 1000V 22A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
paquet: SP6
Stock3 408
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
hot SIF902EDZ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 7A 6-POWERPAK

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 2x5
  • Supplier Device Package: PowerPAK? (2x5)
paquet: PowerPAK? 2x5
Stock65 580
Logic Level Gate
20V
7A
22 mOhm @ 7A, 4.5V
1.5V @ 250µA
14nC @ 4.5V
-
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 2x5
PowerPAK? (2x5)
NTJD4105CT4
ON Semiconductor

MOSFET N/P-CH 20V/8V SOT-363

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
  • Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock5 840
Logic Level Gate
20V, 8V
630mA, 775mA
375 mOhm @ 630mA, 4.5V
1.5V @ 250µA
3nC @ 4.5V
46pF @ 20V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot NDS8958
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 5.3A/4A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A, 4A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock152 184
Logic Level Gate
30V
5.3A, 4A
35 mOhm @ 5.3A, 10V
2.8V @ 250µA
30nC @ 10V
720pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM20AM05FG
Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 317A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
  • Power - Max: 1136W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
paquet: SP6
Stock4 128
Standard
200V
317A
5 mOhm @ 158.5A, 10V
5V @ 10mA
448nC @ 10V
27400pF @ 25V
1136W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50H10FT3G
Microsemi Corporation

MOSFET 4N-CH 500V 37A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 37A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
  • Power - Max: 312W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
paquet: SP3
Stock5 712
Standard
500V
37A
120 mOhm @ 18.5A, 10V
5V @ 1mA
96nC @ 10V
4367pF @ 25V
312W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
SQJ844AEP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 16.6 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
paquet: PowerPAK? SO-8 Dual
Stock7 600
Standard
30V
8A
16.6 mOhm @ 7.6A, 10V
2.5V @ 250µA
26nC @ 10V
1161pF @ 15V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SP8J5TB
Rohm Semiconductor

MOSFET 2P-CH 30V 7A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock12 420
Logic Level Gate
30V
7A
28 mOhm @ 7A, 10V
2.5V @ 1mA
25nC @ 5V
2600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot IRF7379TRPBF
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock819 072
Standard
30V
5.8A, 4.3A
45 mOhm @ 5.8A, 10V
1V @ 250µA
25nC @ 10V
520pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDMD8900
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V POWER

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 17A
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
paquet: 12-PowerWDFN
Stock3 568
Standard
30V
19A, 17A
4 mOhm @ 19A, 10V
2.5V @ 250µA
35nC @ 10V
2605pF @ 15V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
SSM6P41FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.72A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 720mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock7 456
Logic Level Gate
20V
720mA
300 mOhm @ 400mA, 4.5V
1V @ 1mA
1.76nC @ 4.5V
110pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
hot SI7942DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 100V 3.8A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
paquet: PowerPAK? SO-8 Dual
Stock146 316
Logic Level Gate
100V
3.8A
49 mOhm @ 5.9A, 10V
4V @ 250µA
24nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot FDS9926A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock1 348 608
Logic Level Gate
20V
6.5A
30 mOhm @ 6.5A, 4.5V
1.5V @ 250µA
9nC @ 4.5V
650pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SCX6206TQM-V2-NOPB
Texas Instruments

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMTH4011SPD-13
Diodes Incorporated

MOSFET 2N-CH 40V 11.1A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
  • Power - Max: 2.6W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
paquet: -
Stock17 175
-
40V
11.1A (Ta), 42A (Tc)
15mOhm @ 20A, 10V
4V @ 250µA
10.6nC @ 10V
805pF @ 20V
2.6W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
DMN66D0LDWQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.217A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 217mA (Ta)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 29.3pF @ 25V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: -
Request a Quote
-
60V
217mA (Ta)
6Ohm @ 115mA, 5V
2V @ 250µA
0.9nC @ 10V
29.3pF @ 25V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BUK9K25-40RAX
Nexperia USA Inc.

MOSFET 2N-CH 40V 18.2A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
  • Power - Max: 32W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
paquet: -
Stock22 485
Logic Level Gate
40V
18.2A (Ta)
24mOhm @ 5A, 10V
2.1V @ 1mA
6.3nC @ 5V
701pF @ 25V
32W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
UPA2790GR-E1-AT
Renesas

MOSFET N/P-CH 30V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 10V, 60mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 460pF @ 10V
  • Power - Max: 1.7W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Request a Quote
-
30V
6A (Ta)
28mOhm @ 3A, 10V, 60mOhm @ 3A, 10V
2.5V @ 1mA
12.6nC @ 10V, 11nC @ 10V
500pF @ 10V, 460pF @ 10V
1.7W (Ta)
150°C
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
DMN2024UVTQ-13
Diodes Incorporated

MOSFET 2N-CH 20V 7A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
paquet: -
Request a Quote
-
20V
7A (Ta)
24mOhm @ 6.5A, 4.5V
900mV @ 250µA
7.1nC @ 4.5V
647pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
SIZF360DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23A 6POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
  • Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair™
  • Supplier Device Package: 6-PowerPair™
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30V
23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
2.2V @ 250µA
22nC @ 10V, 62nC @ 10V
1100pF @ 15V, 3150pF @ 15V
3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair™
6-PowerPair™
NVMFD6H846NLWFT1G
onsemi

MOSFET 2N-CH 80V 9.4A/31A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 21µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
  • Power - Max: 3.2W (Ta), 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
paquet: -
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80V
9.4A (Ta), 31A (Tc)
15mOhm @ 5A, 10V
2V @ 21µA
17nC @ 10V
900pF @ 40V
3.2W (Ta), 34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMN61D9UDWQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.318A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
  • Power - Max: 370mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: -
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60V
318mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.6nC @ 4.5V
39pF @ 30V
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SP8M6HZGTB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Stock7 458
-
30V
5A (Ta), 3.5A (Ta)
51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
2.5V @ 1mA
3.9nC @ 5V, 5.5nC @ 5V
230pF @ 10V, 490pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MSCSM120AM16CT1AG
Microchip Technology

SIC 2N-CH 1200V 173A SP1F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 745W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP1F
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1200V (1.2kV)
173A (Tc)
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
745W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP1F
SIZF300DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23A 8POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
  • Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
paquet: -
Stock8 478
-
30V
23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
2.2V @ 250µA
22nC @ 10V, 62nC @ 10V
1100pF @ 15V, 3150pF @ 15V
3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
DMT3020LDT-7
Diodes Incorporated

MOSFET 2N-CH 30V 8.5A 8VDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Power - Max: 670mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: V-DFN3030-8 (Type K)
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30V
8.5A (Tc)
20mOhm @ 6A, 10V
2.5V @ 250µA
7nC @ 10V
393pF @ 15V
670mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
V-DFN3030-8 (Type K)
SI6913DQ-T1-BE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.9A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: -
Stock27 000
-
12V
4.9A (Ta)
21mOhm @ 5.8A, 4.5V
900mV @ 400µA
28nC @ 4.5V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP