Page 181 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Matrices

Dossiers 5 684
Page  181/203
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot FDS6984S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 8.5A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock406 992
Logic Level Gate
30V
5.5A, 8.5A
19 mOhm @ 8.5A, 10V
3V @ 250µA
12nC @ 5V
1233pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NDS8961
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.1A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock601 068
Logic Level Gate
30V
3.1A
100 mOhm @ 3.1A, 10V
3V @ 250µA
10nC @ 10V
190pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDW2507NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: 8-TSSOP (0.173", 4.40mm Width)
Stock754 212
Logic Level Gate
20V
7.5A
19 mOhm @ 7.5A, 4.5V
1.5V @ 250µA
28nC @ 4.5V
2152pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FDS6961A_F011
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock4 544
Logic Level Gate
30V
3.5A
90 mOhm @ 3.5A, 10V
3V @ 250µA
4nC @ 5V
220pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IPG20N06S2L50ATMA1
Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8-4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 19µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Power - Max: 51W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
paquet: 8-PowerVDFN
Stock5 696
Logic Level Gate
55V
20A
50 mOhm @ 15A, 10V
2V @ 19µA
17nC @ 10V
560pF @ 25V
51W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
APTM120A65FT1G
Microsemi Corporation

MOSFET 2N-CH 1200V 16A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 780 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
paquet: SP1
Stock6 352
Standard
1200V (1.2kV)
16A
780 mOhm @ 14A, 10V
5V @ 2.5mA
300nC @ 10V
7736pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
TC7920K6-G
Microchip Technology

MOSFET 2N/2P-CH 200V 12VDFN

  • FET Type: 2 N and 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x4)
paquet: 12-VFDFN Exposed Pad
Stock6 032
Standard
200V
-
10 Ohm @ 1A, 10V
2.4V @ 1mA
-
52pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
12-VFDFN Exposed Pad
12-DFN (4x4)
hot SI7872DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
paquet: PowerPAK? SO-8 Dual
Stock1 314 228
Logic Level Gate
30V
6.4A
22 mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
NTMFD4C20NT3G
ON Semiconductor

MOSFET 2N-CH 30V SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
  • Power - Max: 1.09W, 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
paquet: 8-PowerTDFN
Stock5 168
Standard
30V
9.1A, 13.7A
7.3 mOhm @ 10A, 10V
2.1V @ 250µA
9.3nC @ 4.5V
970pF @ 15V
1.09W, 1.15W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
hot FDMS9600S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/16A POWER56

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A, 16A
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Power56
paquet: 8-PowerWDFN
Stock255 684
Logic Level Gate
30V
12A, 16A
8.5 mOhm @ 12A, 10V
3V @ 250µA
13nC @ 4.5V
1705pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Power56
hot STL13DP10F6
STMicroelectronics

MOSFET 2P-CH 100V 13A PWRFLAT56

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V
  • Power - Max: 62.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
paquet: 8-PowerVDFN
Stock4 576
Logic Level Gate
100V
13A
180 mOhm @ 1.7A, 10V
4V @ 250µA
16.5nC @ 10V
864pF @ 25V
62.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
hot ZXMN3A06DN8TA
Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock620 076
Logic Level Gate
30V
4.9A
35 mOhm @ 9A, 10V
1V @ 250µA (Min)
17.5nC @ 10V
796pF @ 25V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI4909DY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 40V 8A 8SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock8 064
Logic Level Gate
40V
8A
27 mOhm @ 8A, 10V
2.5V @ 250µA
63nC @ 10V
2000pF @ 20V
3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PMDPB30XN,115
Nexperia USA Inc.

MOSFET 2N-CH 20V 4A 6HUSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
paquet: 6-UDFN Exposed Pad
Stock2 240
Logic Level Gate
20V
4A
40 mOhm @ 3A, 4.5V
900mV @ 250µA
21.7nC @ 4.5V
660pF @ 10V
490mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
SI4554DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 8A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V
  • Power - Max: 3.1W, 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock7 200
Logic Level Gate
40V
8A
24 mOhm @ 6.8A, 10V
2.2V @ 250µA
20nC @ 10V
690pF @ 20V
3.1W, 3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMN63D0LT-7
Diodes Incorporated

MOSFET N-CH 100V SOT523

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock36 000
-
-
-
-
-
-
-
-
-
-
-
-
CMXDM7002A TR
Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
paquet: SOT-23-6
Stock42 570
Standard
60V
280mA
2 Ohm @ 500mA, 10V
2.5V @ 250µA
0.59nC @ 4.5V
50pF @ 25V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
ALD1101SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock6 444
Standard
10.6V
-
75 Ohm @ 5V
1V @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot STS8C5H30L
STMicroelectronics

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock337 980
Logic Level Gate
30V
8A, 5.4A
22 mOhm @ 4A, 10V
1V @ 250µA
10nC @ 5V
857pF @ 25V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot QS6K21TR
Rohm Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
paquet: SOT-23-6 Thin, TSOT-23-6
Stock361 212
Standard
45V
1A
-
1.5V @ 1mA
-
-
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
DMC1018UPDWQ-13
Diodes Incorporated

MOSFET N/P-CH 12V 20.9A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
  • Power - Max: 2.6W (Ta), 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
paquet: -
Stock5 472
-
12V, 20V
10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
1.5V @ 250µA
30.4nC @ 8V, 19nC @ 8V
1525pF @ 6V, 866pF @ 6V
2.6W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DMP2101UCB9-7
Diodes Incorporated

MOSFET 2P-CH 20V 9UWLB

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
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-
-
-
-
-
-
-
-
-
-
-
-
UPA1857GR-9JG-E1-A
Renesas Electronics Corporation

MOSFET 2N-CH 60V 3.8A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V
  • Power - Max: 1.7W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: -
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Logic Level Gate
60V
3.8A
67mOhm @ 2A, 10V
2.5V @ 1mA
12nC @ 10V
580pF @ 10V
1.7W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FDMA1028NZ-F021
onsemi

MOSFET 2N-CH 20V 3.7A 6MICROFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
paquet: -
Stock9 000
Logic Level Gate
20V
3.7A
68mOhm @ 3.7A, 4.5V
1.5V @ 250µA
6nC @ 4.5V
340pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
APTMC120HR11CT3AG
Microchip Technology

SIC 2N-CH 1200V 26A SP3

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
  • Power - Max: 125W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3
paquet: -
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-
1200V (1.2kV)
26A (Tc)
98mOhm @ 20A, 20V
3V @ 5mA
62nC @ 20V
950pF @ 1000V
125W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
SP3
MC7252KDWA-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V, 50V
  • Current - Continuous Drain (Id) @ 25°C: 340mA, 180mA
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA, 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, 30pF @ 5V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: -
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-
60V, 50V
340mA, 180mA
5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V
2.5V @ 1mA, 2V @ 250µA
-
40pF @ 10V, 30pF @ 5V
150mW
-55°C ~ 150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC2700UDMQ-7
Diodes Incorporated

MOSFET N/P-CH 20V 1.34A SOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), 1.14A (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, 0.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, 59.76pF @ 16V
  • Power - Max: 1.12W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
paquet: -
Stock15 288
-
20V
1.34A (Ta), 1.14A (Ta)
400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V, 0.62nC @ 4.5V
60.67pF @ 16V, 59.76pF @ 16V
1.12W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
NTMFD5C466NLT1G
onsemi

MOSFET 2N-CH 40V 14A/52A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
  • Power - Max: 3W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
paquet: -
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-
40V
14A (Ta), 52A (Tc)
7.4mOhm @ 10A, 10V
2.2V @ 30µA
16nC @ 10V
997pF @ 25V
3W (Ta), 40W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)