Page 170 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4310BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 7.5A 14SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V Power - Max: 1.14W, 1.47W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	paquet: 14-SOIC (0.154", 3.90mm Width)	Stock6 992	Logic Level Gate	30V	7.5A, 9.8A	11 mOhm @ 10A, 10V	3V @ 250µA	18nC @ 4.5V	2370pF @ 15V	1.14W, 1.47W	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
APTM20AM05FTG	Microsemi Corporation	MOSFET 2N-CH 200V 333A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 333A Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	paquet: SP4	Stock4 560	Standard	200V	333A	5 mOhm @ 166.5A, 10V	4V @ 8mA	1184nC @ 10V	40800pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SI4569DY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 40V 7.6A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V Power - Max: 3.1W, 3.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock131 568	Standard	40V	7.6A, 7.9A	27 mOhm @ 6A, 10V	2V @ 250µA	32nC @ 10V	855pF @ 20V	3.1W, 3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDC6000NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.3A 6SSOT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.3A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6 FLMP	paquet: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	Stock12 192	Logic Level Gate	20V	7.3A	20 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	11nC @ 4.5V	840pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6 FLMP
NTHD4401PT3G	ON Semiconductor	MOSFET 2P-CH 20V 2.1A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	paquet: 8-SMD, Flat Lead	Stock202 200	Logic Level Gate	20V	2.1A	155 mOhm @ 2.1A, 4.5V	1.2V @ 250µA	6nC @ 4.5V	300pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
APTC90H12SCTG	Microsemi Corporation	MOSFET 4N-CH 900V 30A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	paquet: SP4	Stock6 016	Super Junction	900V	30A	120 mOhm @ 26A, 10V	3.5V @ 3mA	270nC @ 10V	6800pF @ 100V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FMM110-015X2F	IXYS	MOSFET 2N-CH 150V 53A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 53A Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Power - Max: 180W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	paquet: i4-Pac?-5	Stock3 392	Standard	150V	53A	20 mOhm @ 55A, 10V	4.5V @ 250µA	150nC @ 10V	8600pF @ 25V	180W	-55°C ~ 175°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
ALD1101BPAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	paquet: 8-DIP (0.300", 7.62mm)	Stock4 336	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
TC6215TG-G	Microchip Technology	MOSFET N/P-CH 150V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock91 740	Standard	150V	-	4 Ohm @ 2A, 10V	2V @ 1mA	-	120pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NVMFD5873NLT1G	ON Semiconductor	MOSFET 2N-CH 60V 10A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V Power - Max: 3.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	paquet: 8-PowerTDFN	Stock7 776	Logic Level Gate	60V	10A	13 mOhm @ 15A, 10V	2.5V @ 250µA	30.5nC @ 10V	1560pF @ 25V	3.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DMC3016LDV-7	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	paquet: 8-PowerVDFN	Stock5 968	Standard	30V	21A (Tc), 15A (Tc)	12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V	2.4V @ 250µA	9.5nC @ 4.5V	1184pF @ 15V, 1188pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
EFC2J003NUZTCG	ON Semiconductor	MOSFET N-CH 12V DUAL WLCSP6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock2 512	-	-	-	-	-	-	-	-	-	-	-	-
DMN33D8LDW-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.25A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	paquet: 6-TSSOP, SC-88, SOT-363	Stock3 168	Standard	30V	250mA	2.4 Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSZ15DC02KDHXTMA1	Infineon Technologies	MOSFET N/P-CH 20V 8TDSON FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8-FL	paquet: 8-PowerTDFN	Stock2 048	Logic Level Gate, 2.5V Drive	20V	5.1A, 3.2A	55 mOhm @ 5.1A, 4.5V	1.4V @ 110µA	2.8nC @ 4.5V	419pF @ 10V	2.5W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PG-TSDSON-8-FL
DMN2008LFU-7	Diodes Incorporated	MOSFET 2N-CHA 20V 14.5A DFN2030 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	paquet: 6-UFDFN Exposed Pad	Stock3 264	Standard	20V	14.5A	5.4 mOhm @ 5.5A, 4.5V	1.5V @ 250A	42.3nC @ 10V	1418pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
SI4816BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock55 704	Logic Level Gate	30V	5.8A, 8.2A	18.5 mOhm @ 6.8A, 10V	3V @ 250µA	10nC @ 5V	-	1W, 1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7997DP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 60A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	paquet: PowerPAK? SO-8 Dual	Stock16 404	Standard	30V	60A	5.5 mOhm @ 20A, 10V	2.2V @ 250µA	160nC @ 10V	6200pF @ 15V	46W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
CCB032M12FM3	Wolfspeed, Inc.	SIC 6N-CH 1200V 40A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	paquet: -	Stock243	-	1200V (1.2kV)	40A	42.6mOhm @ 30A, 15V	3.6V @ 11.5mA	118nC @ 15V	3400pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
HT8KE5TB1	Rohm Semiconductor	MOSFET 2N-CH 100V 2.5A/7A 8HSMT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Power - Max: 2W (Ta), 13W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-HSMT (3.2x3)	paquet: -	Stock8 970	-	100V	2.5A (Ta), 7A (Tc)	193mOhm @ 2.5A, 10V	2.5V @ 1mA	2.9nC @ 10V	90pF @ 50V	2W (Ta), 13W (Tc)	150°C (TJ)	Surface Mount	8-PowerVDFN	8-HSMT (3.2x3)
DMC1028UVT-7	Diodes Incorporated	MOSFET N/P-CH 12V 6.1A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	paquet: -	Stock10 983	-	12V, 20V	6.1A (Ta), 3.5A (Ta)	25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V	1V @ 250µA	18.5nC @ 8V, 11.5nC @ 8V	787pF @ 6V, 576pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SQ4532AEY-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 30V 7.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	paquet: -	Stock9 534	-	30V	7.3A (Tc), 5.3A (Tc)	31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V	2.5V @ 250µA	7.8nC @ 10V, 10.2nC @ 10V	535pF @ 15V, 528pF @ 15V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
GSFB0305	Good-Ark Semiconductor	MOSFET 2P-CH 30V 4.2A/8A 6PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 1.9W (Ta), 7.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-PPAK (2x2)	paquet: -	Stock18 000	-	30V	4.2A (Ta), 8A (Tc)	75mOhm @ 3A, 10V	2.5V @ 250µA	10nC @ 4.5V	820pF @ 15V	1.9W (Ta), 7.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-PPAK (2x2)
SSM6L36TU-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.5A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	paquet: -	Stock11 970	Logic Level Gate, 1.5V Drive	20V	500mA (Ta), 330mA (Ta)	630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V	1V @ 1mA	1.23nC @ 4V, 1.2nC @ 4V	46pF @ 10V, 43pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SCH2602-TL-E	onsemi	PCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NTMFD5C674NLT1G	onsemi	MOSFET 2N-CH 60V 11A/42A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Power - Max: 3W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	paquet: -	Stock3 000	-	60V	11A (Ta), 42A (Tc)	14.4mOhm @ 10A, 10V	2.2V @ 25µA	10nC @ 10V	640pF @ 25V	3W (Ta), 37W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
AO4606	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 6A/6.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	paquet: -	Request a Quote	-	30V	6A (Ta), 6.5A (Ta)	30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V	2.4V @ 250µA	6nC @ 10V, 16nC @ 10V	310pF @ 15V, 760pF @ 15V	2W	-55°C ~ 150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
2N7002DW-7-F-79	Diodes Incorporated	MOSFET 2N-CH 60V SOT-363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
ECH8661-TL-HX	onsemi	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

SI4310BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 7.5A 14SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A
Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
Power - Max: 1.14W, 1.47W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

paquet: 14-SOIC (0.154", 3.90mm Width)

Stock6 992

Logic Level Gate

30V

7.5A, 9.8A

11 mOhm @ 10A, 10V

3V @ 250µA

18nC @ 4.5V

2370pF @ 15V

1.14W, 1.47W

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

APTM20AM05FTG

Microsemi Corporation

MOSFET 2N-CH 200V 333A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 333A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

paquet: SP4

Stock4 560

Standard

200V

333A

5 mOhm @ 166.5A, 10V

4V @ 8mA

1184nC @ 10V

40800pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

SI4569DY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 40V 7.6A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Power - Max: 3.1W, 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock131 568

Standard

40V

7.6A, 7.9A

27 mOhm @ 6A, 10V

2V @ 250µA

32nC @ 10V

855pF @ 20V

3.1W, 3.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDC6000NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.3A 6SSOT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Supplier Device Package: SuperSOT?-6 FLMP

paquet: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

Stock12 192

Logic Level Gate

20V

7.3A

20 mOhm @ 6.5A, 4.5V

1.5V @ 250µA

11nC @ 4.5V

840pF @ 10V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

6-SSOT Flat-lead, SuperSOT?-6 FLMP

SuperSOT?-6 FLMP

NTHD4401PT3G

ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

paquet: 8-SMD, Flat Lead

Stock202 200

Logic Level Gate

20V

2.1A

155 mOhm @ 2.1A, 4.5V

1.2V @ 250µA

6nC @ 4.5V

300pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

APTC90H12SCTG

Microsemi Corporation

MOSFET 4N-CH 900V 30A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

paquet: SP4

Stock6 016

Super Junction

900V

30A

120 mOhm @ 26A, 10V

3.5V @ 3mA

270nC @ 10V

6800pF @ 100V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

FMM110-015X2F

IXYS

MOSFET 2N-CH 150V 53A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Power - Max: 180W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

paquet: i4-Pac?-5

Stock3 392

Standard

150V

53A

20 mOhm @ 55A, 10V

4.5V @ 250µA

150nC @ 10V

8600pF @ 25V

180W

-55°C ~ 175°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

ALD1101BPAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

paquet: 8-DIP (0.300", 7.62mm)

Stock4 336

Standard

10.6V

-

75 Ohm @ 5V

1V @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

TC6215TG-G

Microchip Technology

MOSFET N/P-CH 150V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock91 740

Standard

150V

-

4 Ohm @ 2A, 10V

2V @ 1mA

-

120pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NVMFD5873NLT1G

ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

paquet: 8-PowerTDFN

Stock7 776

Logic Level Gate

60V

10A

13 mOhm @ 15A, 10V

2.5V @ 250µA

30.5nC @ 10V

1560pF @ 25V

3.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

DMC3016LDV-7

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

paquet: 8-PowerVDFN

Stock5 968

Standard

30V

21A (Tc), 15A (Tc)

12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V

2.4V @ 250µA

9.5nC @ 4.5V

1184pF @ 15V, 1188pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

EFC2J003NUZTCG

ON Semiconductor

MOSFET N-CH 12V DUAL WLCSP6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock2 512

-

DMN33D8LDW-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.25A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

paquet: 6-TSSOP, SC-88, SOT-363

Stock3 168

Standard

30V

250mA

2.4 Ohm @ 250mA, 10V

1.5V @ 100µA

1.23nC @ 10V

48pF @ 5V

350mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BSZ15DC02KDHXTMA1

Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL

paquet: 8-PowerTDFN

Stock2 048

Logic Level Gate, 2.5V Drive

20V

5.1A, 3.2A

55 mOhm @ 5.1A, 4.5V

1.4V @ 110µA

2.8nC @ 4.5V

419pF @ 10V

2.5W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PG-TSDSON-8-FL

DMN2008LFU-7

Diodes Incorporated

MOSFET 2N-CHA 20V 14.5A DFN2030

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

paquet: 6-UFDFN Exposed Pad

Stock3 264

Standard

20V

14.5A

5.4 mOhm @ 5.5A, 4.5V

1.5V @ 250A

42.3nC @ 10V

1418pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

SI4816BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock55 704

Logic Level Gate

30V

5.8A, 8.2A

18.5 mOhm @ 6.8A, 10V

3V @ 250µA

10nC @ 5V

-

1W, 1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7997DP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 60A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

paquet: PowerPAK? SO-8 Dual

Stock16 404

Standard

30V

60A

5.5 mOhm @ 20A, 10V

2.2V @ 250µA

160nC @ 10V

6200pF @ 15V

46W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

CCB032M12FM3

Wolfspeed, Inc.

SIC 6N-CH 1200V 40A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

paquet: -

Stock243

-

1200V (1.2kV)

40A

42.6mOhm @ 30A, 15V

3.6V @ 11.5mA

118nC @ 15V

3400pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

HT8KE5TB1

Rohm Semiconductor

MOSFET 2N-CH 100V 2.5A/7A 8HSMT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Power - Max: 2W (Ta), 13W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-HSMT (3.2x3)

paquet: -

Stock8 970

-

100V

2.5A (Ta), 7A (Tc)

193mOhm @ 2.5A, 10V

2.5V @ 1mA

2.9nC @ 10V

90pF @ 50V

2W (Ta), 13W (Tc)

150°C (TJ)

Surface Mount

8-PowerVDFN

8-HSMT (3.2x3)

DMC1028UVT-7

Diodes Incorporated

MOSFET N/P-CH 12V 6.1A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

paquet: -

Stock10 983

-

12V, 20V

6.1A (Ta), 3.5A (Ta)

25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V

1V @ 250µA

18.5nC @ 8V, 11.5nC @ 8V

787pF @ 6V, 576pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SQ4532AEY-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 30V 7.3A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

paquet: -

Stock9 534

-

30V

7.3A (Tc), 5.3A (Tc)

31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V

2.5V @ 250µA

7.8nC @ 10V, 10.2nC @ 10V

535pF @ 15V, 528pF @ 15V

3.3W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

GSFB0305

Good-Ark Semiconductor

MOSFET 2P-CH 30V 4.2A/8A 6PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 1.9W (Ta), 7.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-PPAK (2x2)

paquet: -

Stock18 000

-

30V

4.2A (Ta), 8A (Tc)

75mOhm @ 3A, 10V

2.5V @ 250µA

10nC @ 4.5V

820pF @ 15V

1.9W (Ta), 7.4W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-PPAK (2x2)

SSM6L36TU-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

paquet: -

Stock11 970

Logic Level Gate, 1.5V Drive

20V

500mA (Ta), 330mA (Ta)

630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V

1V @ 1mA

1.23nC @ 4V, 1.2nC @ 4V

46pF @ 10V, 43pF @ 10V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

SCH2602-TL-E

onsemi

PCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

NTMFD5C674NLT1G

onsemi

MOSFET 2N-CH 60V 11A/42A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Power - Max: 3W (Ta), 37W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

paquet: -

Stock3 000

-

60V

11A (Ta), 42A (Tc)

14.4mOhm @ 10A, 10V

2.2V @ 25µA

10nC @ 10V

640pF @ 25V

3W (Ta), 37W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

AO4606

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6A/6.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 760pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

paquet: -

Request a Quote

-

30V

6A (Ta), 6.5A (Ta)

30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V

2.4V @ 250µA

6nC @ 10V, 16nC @ 10V

310pF @ 15V, 760pF @ 15V

2W

-55°C ~ 150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

2N7002DW-7-F-79

Diodes Incorporated

MOSFET 2N-CH 60V SOT-363

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

ECH8661-TL-HX

onsemi

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-