Page 110 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets | Heisener Electronics
Contactez nous
SalesDept@heisener.com +86-755-83210559 ext. 809
Connexion/S'inscrire
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Chariot 0

Transistors - FET, MOSFET - Matrices

Dossiers 5 684
Page  110/203
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7507PBF
Infineon Technologies

MOSFET N/P-CH DUAL 20V MICRO-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Stock7 952
Logic Level Gate
20V
2.4A, 1.7A
140 mOhm @ 1.7A, 4.5V
700mV @ 250µA (Min)
8nC @ 4.5V
260pF @ 15V
1.25W
-
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
AO4801HL
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock2 192
-
-
-
-
-
-
-
-
-
-
-
-
hot SI4804BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock45 912
Logic Level Gate
30V
5.7A
22 mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI5504DC-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 2.9A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
paquet: 8-SMD, Flat Lead
Stock1 545 276
Logic Level Gate
30V
2.9A, 2.1A
85 mOhm @ 2.9A, 10V
1V @ 250µA (Min)
7.5nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot FDS3812
Fairchild/ON Semiconductor

MOSFET 2N-CH 80V 3.4A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 74 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock215 088
Logic Level Gate
80V
3.4A
74 mOhm @ 3.4A, 10V
4V @ 250µA
18nC @ 10V
634pF @ 40V
900mW
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTC60TAM24TPG
Microsemi Corporation

MOSFET 6N-CH 600V 95A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
paquet: SP6
Stock3 264
Super Junction
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTC60VDAM24T3G
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
paquet: SP3
Stock5 024
Super Junction
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
VMK90-02T2
IXYS

MOSFET 2N-CH 200V 83A TO-240AA

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 83A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
  • Power - Max: 380W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
  • Supplier Device Package: TO-240AA
paquet: TO-240AA
Stock5 888
Standard
200V
83A
25 mOhm @ 500mA, 10V
4V @ 3mA
450nC @ 10V
15000pF @ 25V
380W
-40°C ~ 150°C (TJ)
Chassis Mount
TO-240AA
TO-240AA
ALD212908ASAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock5 184
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AOD607A
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V TO252-4

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
  • Power - Max: 19W (Tc), 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
paquet: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Stock7 328
Standard
30V
8A (Tc), 12A (Tc)
25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V
2.6V @ 250µA, 2.4V @ 250µA
7nC @ 4.5V, 12nC @ 4.5V
395pF @ 15V, 730pF @ 15V
19W (Tc), 30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
DMC3025LNS-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
  • Power - Max: 1.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
paquet: 8-PowerVDFN
Stock3 376
Standard
30V
7.2A (Ta), 6.8A (Ta)
25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
2V @ 250µA
4.6nC @ 4.5V, 9.5nC @ 4.5V
500pF @ 15V, 1188pF @ 15V
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
hot ZXMC6A09DN8TA
Diodes Incorporated

MOSFET N/P-CH 60V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock497 280
Logic Level Gate
60V
3.9A, 3.7A
45 mOhm @ 8.2A, 10V
1V @ 250µA (Min)
24.2nC @ 10V
1407pF @ 40V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6L61NU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 4A UDFN6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
paquet: 6-WDFN Exposed Pad
Stock23 022
Standard
20V
4A
-
-
-
-
-
-
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SQ9945BEY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 5.4A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • Power - Max: 4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock25 446
Logic Level Gate
60V
5.4A
64 mOhm @ 3.4A, 10V
2.5V @ 250µA
12nC @ 10V
470pF @ 25V
4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMG4511SK4-13
Diodes Incorporated

MOSFET N/P-CH 35V TO252-4L

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
  • Power - Max: 1.54W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
paquet: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Stock69 240
Logic Level Gate
35V
5.3A, 5A
35 mOhm @ 8A, 10V
3V @ 250µA
18.7nC @ 10V
850pF @ 25V
1.54W
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
hot FDMB3800N
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 4.8A MICROFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
  • Power - Max: 750mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-MLP, MicroFET (3x1.9)
paquet: 8-PowerWDFN
Stock880 980
Logic Level Gate
30V
4.8A
40 mOhm @ 4.8A, 10V
3V @ 250µA
5.6nC @ 5V
465pF @ 15V
750mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-MLP, MicroFET (3x1.9)
CAB530M12BM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 530A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 530A
  • Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 140mA
  • Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
paquet: -
Stock21
-
1200V (1.2kV)
530A
3.55mOhm @ 530A, 15V
3.6V @ 140mA
1362nC @ 4V
39600pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FF1MR12KM1HPHPSA1
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock48
-
-
-
-
-
-
-
-
-
-
-
-
MTI200WX75GD-SMD
IXYS

MOSFET 6N-CH 75V 255A ISOPLUS

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL™
  • Supplier Device Package: ISOPLUS-DIL™
paquet: -
Request a Quote
-
75V
255A (Tc)
1.3mOhm @ 100A, 10V
3.8V @ 275µA
155nC @ 10V
14400pF @ 38V
-
-55°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL™
ISOPLUS-DIL™
UT6JB5TCR
Rohm Semiconductor

MOSFET 2P-CH 40V 3.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
paquet: -
Stock7 044
-
40V
3.5A (Ta)
122mOhm @ 3.5A, 10V
2.5V @ 1mA
6.2nC @ 10V
265pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
FDW2509NZ
Fairchild Semiconductor

MOSFET 2N-CH 20V 7.1A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1263pF @ 10V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: -
Request a Quote
-
20V
7.1A (Ta)
20mOhm @ 7.1A, 4.5V
1.5V @ 250µA
19nC @ 4.5V
1263pF @ 10V
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
6LP04CH-TL-E-SY
Sanyo

MOSFET P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SP8K32HZGTB
Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Stock6 690
-
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V
2.5V @ 1mA
10nC @ 5V
500pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SIZF928DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 33A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
paquet: -
Stock18 192
-
30V
33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
2V @ 250µA
-
-
3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SP8K3TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Request a Quote
Logic Level Gate, 4V Drive
30V
7A (Ta)
24mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8KC6TCR
Rohm Semiconductor

MOSFET 2N-CH 60V 5.5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
paquet: -
Stock9 876
-
60V
5.5A (Ta)
30mOhm @ 5.5A, 10V
2.5V @ 1mA
7.6nC @ 10V
460pF @ 30V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
DMN32D0LV-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
  • Power - Max: 480mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
paquet: -
Request a Quote
-
30V
680mA (Ta)
1.2Ohm @ 100mA, 4V
1.2V @ 250µA
0.62nC @ 4.5V
44.8pF @ 15V
480mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
BUK7K23-80EX
Nexperia USA Inc.

MOSFET 2N-CH 80V 17A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1542pF @ 25V
  • Power - Max: 53W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
paquet: -
Stock12 225
-
80V
17A (Ta)
23mOhm @ 10A, 10V
4V @ 1mA
22.8nC @ 10V
1542pF @ 25V
53W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D