Page 664 - Transistors - Bipolaires (BJT) - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - Simples

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Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA949-Y,F(J
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock5 744
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
hot MJD42CRL
ON Semiconductor

TRANS PNP 100V 6A DPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
  • Power - Max: 1.75W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock420 000
6A
100V
1.5V @ 600mA, 6A
50µA
15 @ 3A, 4V
1.75W
3MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
KSP75TA
Fairchild/ON Semiconductor

TRANS PNP DARL 40V 0.5A TO-92

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock2 576
500mA
40V
1.5V @ 100µA, 100mA
500nA
10000 @ 100mA, 5V
625mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
KSP6520BU
Fairchild/ON Semiconductor

TRANS NPN 25V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock7 792
100mA
25V
500mV @ 5mA, 50mA
50nA (ICBO)
200 @ 2mA, 10V
625mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N5308_D27Z
Fairchild/ON Semiconductor

TRANS NPN DARL 40V 1.2A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock4 912
1.2A
40V
1.4V @ 200µA, 200mA
100nA (ICBO)
7000 @ 2mA, 5V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N5771_D27Z
Fairchild/ON Semiconductor

TRANS PNP 15V 0.2A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3 040
200mA
15V
600mV @ 5mA, 50mA
10nA
50 @ 10mA, 300mV
350mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot JAN2N1893S
Microsemi Corporation

TRANS NPN 80V 0.5A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: TO-205AD, TO-39-3 Metal Can
Stock7 380
500mA
80V
5V @ 15mA, 150mA
10µA (ICBO)
40 @ 150mA, 10V
3W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
2N5963
Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 10mA, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock3 472
50mA
30V
200mV @ 500µA, 10mA
2nA (ICBO)
1200 @ 10mA, 5V
1.5W
150MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
hot 2SA1514KT146S
Rohm Semiconductor

TRANS PNP 120V 0.05A SOT-346

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
paquet: TO-236-3, SC-59, SOT-23-3
Stock175 968
50mA
120V
500mV @ 1mA, 10mA
500nA (ICBO)
180 @ 2mA, 6V
200mW
140MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
BC850CW RFG
TSC America Inc.

TRANSISTOR, NPN, 45V, 0.1A, 420A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: SC-70, SOT-323
Stock5 504
100mA
45V
600mV @ 5mA, 100mA
100nA (ICBO)
420 @ 2mA, 5V
200mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot MJD117T4
STMicroelectronics

TRANS PNP DARL 100V 2A D-PAK

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
  • Power - Max: 20W
  • Frequency - Transition: 25MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock65 592
2A
100V
3V @ 40mA, 4A
20µA
1000 @ 2A, 3V
20W
25MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
BC856BM3T5G
ON Semiconductor

TRANS PNP 65V 0.1A SOT-723

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 265mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
paquet: SOT-723
Stock4 032
100mA
65V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
265mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
hot ZXTP25020DFLTA
Diodes Incorporated

TRANS PNP 20V 1.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 350mW
  • Frequency - Transition: 290MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock113 712
1.5A
20V
260mV @ 400mA, 4A
50nA (ICBO)
300 @ 10mA, 2V
350mW
290MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot NSS1C200LT1G
ON Semiconductor

TRANS PNP 100V 2A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
  • Power - Max: 490mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock1 446 168
2A
100V
250mV @ 200mA, 2A
100nA (ICBO)
120 @ 50mA, 2V
490mW
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
PMST3904,115
Nexperia USA Inc.

TRANS NPN 40V 0.2A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
paquet: SC-70, SOT-323
Stock47 154
200mA
40V
300mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
200mW
300MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
hot ZXT790AKTC
Diodes Incorporated

TRANS PNP 40V 3A D-PAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 3.9W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-3
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock74 328
3A
40V
450mV @ 300mA, 3A
20nA
300 @ 10mA, 2V
3.9W
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-3
90024-05TX
Microchip Technology

TRANS NPN TO3

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
Through Hole
TO-204AA, TO-3
TO-3
2SC2873-O-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 500 mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
paquet: -
Request a Quote
2 A
50 V
500mV @ 50mA, 1A
100nA (ICBO)
120 @ 1mA, 6V
500 mW
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
2SC2412-Q-TP
Micro Commercial Co

TRANS NPN 50V 0.15A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: -
Request a Quote
150 mA
50 V
400mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
200 mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BC857BQB-QZ
Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 340 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1110D-3
paquet: -
Request a Quote
100 mA
45 V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
340 mW
100MHz
150°C (TJ)
Surface Mount, Wettable Flank
3-XDFN Exposed Pad
DFN1110D-3
2SC5198-O-S1-E
Toshiba Semiconductor and Storage

TRANS NPN 140V 10A TO3P

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Power - Max: 100 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
paquet: -
Request a Quote
10 A
140 V
2V @ 700mA, 7A
5µA (ICBO)
55 @ 1A, 5V
100 W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
BC847BWT1
onsemi

TRANSISTOR NPN 45V 100MA SOT-323

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BC846B-C
Diotec Semiconductor

IC

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: -
Request a Quote
100 mA
65 V
600mV @ 5mA, 100mA
100nA (ICBO)
200 @ 2mA, 5V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2N5611
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 25 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
paquet: -
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5 A
100 V
-
-
-
25 W
-
-
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
BC846B_R1_00001
Panjit International Inc.

TRANS NPN 65V 0.1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 330 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: -
Stock17 016
100 mA
65 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
330 mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NTE387
NTE Electronics, Inc

TRANS NPN 150V 50A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 4V
  • Power - Max: 250 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: -
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50 A
150 V
3V @ 10A, 50A
50µA
50 @ 1A, 4V
250 W
30MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
NTE129
NTE Electronics, Inc

TRANS PNP 80V 1A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.25 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
paquet: -
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1 A
80 V
500mV @ 50mA, 500mA
50nA (ICBO)
100 @ 100mA, 5V
1.25 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2SC945A-ND-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
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