Page 582 - Transistors - Bipolaires (BJT) - Simples | Produits à semiconducteurs discrets | Heisener Electronics
Contactez nous
SalesDept@heisener.com +86-755-83210559 ext. 807
Language Translation

* Please refer to the English Version as our Official Version.

Transistors - Bipolaires (BJT) - Simples

Dossiers 20 307
Page  582/726
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC 807-40W E6433
Infineon Technologies

TRANS PNP 45V 0.5A SOT-323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
paquet: SC-70, SOT-323
Stock3 376
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
250 @ 100mA, 1V
250mW
200MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
hot TIP110
Central Semiconductor Corp

TRANS NPN DARL 60V 2A TO-220AB

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
  • Power - Max: -
  • Frequency - Transition: 25MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
paquet: TO-220-3
Stock106 032
-
60V
2.5V @ 8mA, 2A
2mA
1000 @ 1A, 4V
-
25MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
2SA1708S-AN
ON Semiconductor

TRANS PNP 100V 1A NMP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: 3-NMP
paquet: SC-71
Stock6 064
1A
100V
600mV @ 40mA, 400mA
100nA (ICBO)
100 @ 100mA, 5V
1W
120MHz
150°C (TJ)
Through Hole
SC-71
3-NMP
BD746-S
Bourns Inc.

TRANS PNP 45V 20A SOT-93

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 5A, 20A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
  • Power - Max: 3.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
paquet: TO-218-3
Stock6 544
20A
45V
3V @ 5A, 20A
100µA
20 @ 5A, 4V
3.5W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93
hot 2N5400
ON Semiconductor

TRANS PNP 120V 0.6A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock753 024
600mA
120V
500mV @ 5mA, 50mA
100nA (ICBO)
40 @ 10mA, 5V
625mW
400MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BC547ARL1G
ON Semiconductor

TRANS NPN 45V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3 360
100mA
45V
250mV @ 500µA, 10mA
15nA
110 @ 2mA, 5V
625mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
KSB1149OS
Fairchild/ON Semiconductor

TRANS PNP DARL 100V 3A TO-126

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1.5mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 2V
  • Power - Max: 1.3W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
paquet: TO-225AA, TO-126-3
Stock2 208
3A
100V
1.2V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 1.5A, 2V
1.3W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
hot ZTX457STOA
Diodes Incorporated

TRANS NPN 300V 0.5A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
paquet: E-Line-3, Formed Leads
Stock144 000
500mA
300V
300mV @ 10mA, 100mA
100nA (ICBO)
50 @ 50mA, 10V
1W
75MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot BU806
Fairchild/ON Semiconductor

TRANS NPN DARL 200V 8A TO-220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 60W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
paquet: TO-220-3
Stock114 696
8A
200V
1.5V @ 50mA, 5A
100µA
-
60W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
JAN2N3867S
Microsemi Corporation

TRANS PNP 40V 3A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: TO-205AD, TO-39-3 Metal Can
Stock7 024
3A
40V
1.5V @ 250mA, 2.5A
100µA (ICBO)
40 @ 1.5A, 2V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
hot 2SA1727TLQ
Rohm Semiconductor

TRANS PNP 400V 0.5A SOT-428

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 12MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: CPT3
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock804 852
500mA
400V
1V @ 10mA, 100mA
1µA (ICBO)
120 @ 50mA, 5V
1W
12MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
CPT3
CMPT2907A BK
Central Semiconductor Corp

TRANS PNP 60V 0.6A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock4 272
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
350mW
200MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MMBT3904 RFG
TSC America Inc.

TRANSISTOR, NPN, 40V, 0.2A, 100A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 864
200mA
40V
300mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
300mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2SC58630QL
Panasonic Electronic Components

TRANS NPN 300V 0.07A MINI-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 70mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
paquet: TO-236-3, SC-59, SOT-23-3
Stock307 092
70mA
300V
1.2V @ 5mA, 50mA
1µA
60 @ 5mA, 10V
200mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
MMBT3906T-TP
Micro Commercial Co

TRANS PNP 40V 0.2A SOT-523

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
paquet: SOT-523
Stock2 256
200mA
40V
400mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
150mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
FJX992TF
Fairchild/ON Semiconductor

TRANS PNP 120V 0.1A SOT323-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 235mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: SC-70, SOT-323
Stock3 856
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
235mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot MPSA06
Fairchild/ON Semiconductor

TRANS NPN 80V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock1 608 036
500mA
80V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot FMMTA06TA
Diodes Incorporated

TRANS NPN 80V 0.5A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock20 148
500mA
80V
250mV @ 10mA, 100mA
100nA
50 @ 10mA, 1V
330mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
S9018-I-AP
Micro Commercial Co

TRANS NPN 18V 0.05A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50 mA
  • Voltage - Collector Emitter Breakdown (Max): 18 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1mA, 5V
  • Power - Max: 310 mW
  • Frequency - Transition: 600MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
paquet: -
Request a Quote
50 mA
18 V
500mV @ 1mA, 10mA
100nA
130 @ 1mA, 5V
310 mW
600MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
2C2945A
Microchip Technology

TRANSISTOR SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANTXV2N3700P
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
paquet: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
10nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
JAN2N5664P
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
  • Power - Max: 2.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
paquet: -
Request a Quote
5 A
200 V
400mV @ 300mA, 3A
200nA
40 @ 1A, 5V
2.5 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
5885-2N5434
onsemi

TRANS NPN 60V 25A

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5194-TIN-LEAD
Central Semiconductor Corp

TRANS PNP 60V 4A TO126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
  • Power - Max: 40 W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
paquet: -
Stock7 188
4 A
60 V
1.4V @ 1A, 4A
1mA
25 @ 1.5A, 2V
40 W
2MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
JANSM2N3700UB
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
paquet: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
10nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JANSP2N3636UB
Microchip Technology

TRANS PNP 175V 1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
paquet: -
Request a Quote
1 A
175 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
1.5 W
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
2SC5658FHAT2LR
Rohm Semiconductor

TRANS NPN 50V 0.15A VMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 150 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VMT3
paquet: -
Stock17 241
150 mA
50 V
400mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
150 mW
180MHz
150°C (TJ)
Surface Mount
SOT-723
VMT3
MJE13002B-AP
Micro Commercial Co

TRANS NPN 400V 0.8A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 200mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 200mA, 10V
  • Power - Max: 900 mW
  • Frequency - Transition: 5MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
paquet: -
Request a Quote
800 mA
400 V
500mV @ 40mA, 200mA
100µA (ICBO)
9 @ 200mA, 10V
900 mW
5MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92