Page 426 - Transistors - Bipolaires (BJT) - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - Simples

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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC3665-Y,T2F(J
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
paquet: SC-71
Stock6 528
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
1W
120MHz
150°C (TJ)
Through Hole
SC-71
MSTM
BD241C-S
Bourns Inc.

TRANS NPN 100V 3A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
paquet: TO-220-3
Stock6 896
3A
100V
1.2V @ 600mA, 3A
300µA
25 @ 1A, 4V
40W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
2SD1012F-SPA-AC
ON Semiconductor

TRANS NPN 15V 0.7A SPA

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: 3-SPA
paquet: 3-SIP
Stock7 312
700mA
15V
80mV @ 10mA, 100mA
1µA (ICBO)
160 @ 50mA, 2V
250mW
250MHz
125°C (TJ)
Through Hole
3-SIP
3-SPA
KSA614O
Fairchild/ON Semiconductor

TRANS PNP 55V 3A TO-220

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
paquet: TO-220-3
Stock4 208
3A
55V
500mV @ 100mA, 1A
50µA (ICBO)
70 @ 500mA, 5V
25W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
ZTX948STOB
Diodes Incorporated

TRANS PNP 20V 4.5A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 310mV @ 300mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 1.2W
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
paquet: E-Line-3
Stock5 888
4.5A
20V
310mV @ 300mA, 5A
50nA (ICBO)
100 @ 1A, 1V
1.2W
80MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
ZTX712STZ
Diodes Incorporated

TRANS PNP DARL 60V 0.8A E-LINE

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
paquet: E-Line-3, Formed Leads
Stock7 008
800mA
60V
1.25V @ 8mA, 800mA
100nA (ICBO)
10000 @ 500mA, 5V
1W
-
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
MPSA18RLRA
ON Semiconductor

TRANS NPN 45V 0.2A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock2 656
200mA
45V
300mV @ 5mA, 50mA
50nA (ICBO)
500 @ 10mA, 5V
625mW
160MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2SD0601ASL
Panasonic Electronic Components

TRANS NPN 50V 0.1A MINI 3P

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
paquet: TO-236-3, SC-59, SOT-23-3
Stock30 060
100mA
50V
300mV @ 10mA, 100mA
100µA
290 @ 2mA, 10V
200mW
150MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
2SD1991A0A
Panasonic Electronic Components

TRANS NPN 50V 0.1A MT-1

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 400mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: MT-1-A1
paquet: 3-SIP
Stock3 408
100mA
50V
300mV @ 10mA, 100mA
1µA
160 @ 2mA, 10V
400mW
150MHz
150°C (TJ)
Through Hole
3-SIP
MT-1-A1
BC857CE6433HTMA1
Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock6 624
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
330mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
JAN2N3506AL
Microsemi Corporation

TRANS NPN 40V 3A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
paquet: TO-205AA, TO-5-3 Metal Can
Stock3 440
3A
40V
1.5V @ 250mA, 2.5A
-
40 @ 1.5A, 2V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
BUJ103AD,118
WeEn Semiconductors

TRANS NPN 400V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 5V
  • Power - Max: 80W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7 472
4A
400V
1V @ 600mA, 3A
100µA
13 @ 500mA, 5V
80W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot BC807-16W-7
Diodes Incorporated

TRANS PNP 45V 0.5A SC70-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: SC-70, SOT-323
Stock900 000
500mA
45V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
200mW
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot STBV45-AP
STMicroelectronics

TRANS NPN 400V 0.75A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 750mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 135mA, 400mA
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 400mA, 5V
  • Power - Max: 950mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92AP
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock18 840
750mA
400V
1.5V @ 135mA, 400mA
250µA
5 @ 400mA, 5V
950mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92AP
2N6286G
ON Semiconductor

TRANS PNP DARL 80V 20A TO-3

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
  • Power - Max: 160W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: TO-204AA, TO-3
Stock8 628
20A
80V
3V @ 200mA, 20A
1mA
750 @ 10A, 3V
160W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
DXTA92-13
Diodes Incorporated

TRANS PNP 300V 0.5A SOT89-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
paquet: TO-243AA
Stock25 110
500mA
300V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 1mA, 10V
1W
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
PBSS4140T,235
Nexperia USA Inc.

TRANS NPN 40V 1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
  • Power - Max: 450mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
paquet: TO-236-3, SC-59, SOT-23-3
Stock5 920
1A
40V
500mV @ 100mA, 1A
100nA
300 @ 500mA, 5V
450mW
150MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
TIP41-BP
Micro Commercial Co

TRANS NPN 40V 6A TO220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
  • Power - Max: 2 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: -
Request a Quote
6 A
40 V
1.5V @ 600mA, 6A
700µA
30 @ 300mA, 4V
2 W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
D42C11X
Harris Corporation

3A NPN POWER TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SA1013-Y-AP
Micro Commercial Co

TRANS PNP 160V 1A TO92MOD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 5V
  • Power - Max: 900 mW
  • Frequency - Transition: 15MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92MOD
paquet: -
Request a Quote
1 A
160 V
1.5V @ 50mA, 500mA
10µA
200 @ 200mA, 5V
900 mW
15MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92MOD
PBHV9050Z-QF
Nexperia USA Inc.

PBHV9050Z-Q/SOT223/SC-73

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 250 mA
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 20mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 700 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: -
Stock12 000
250 mA
500 V
350mV @ 20mA, 100mA
100nA
100 @ 10mA, 10V
700 mW
50MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
MJ13091
Harris Corporation

TRANS NPN 6V 15A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 15A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
  • Power - Max: 175 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: -
Request a Quote
15 A
450 V
3V @ 3A, 15A
500µA
8 @ 10A, 3V
175 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
BC858A-TP
Micro Commercial Co

Interface

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: -
Request a Quote
100 mA
30 V
650mV @ 5mA, 100mA
15nA
125 @ 2mA, 5V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N4904
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 87 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
paquet: -
Request a Quote
5 A
40 V
-
-
-
87 W
-
-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
2N3962
onsemi

TRANS PNP 60V 0.2A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
paquet: -
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200 mA
60 V
400mV @ 5mA, 50mA
10nA
100 @ 1mA, 5V
360 mW
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
2N656S
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 12 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
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12 A
60 V
-
-
-
-
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
NTE270
NTE Electronics, Inc

TRANS NPN DARL 100V 10A TO3PN

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
  • Power - Max: 125 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
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10 A
100 V
3V @ 40mA, 10A
2mA
1000 @ 5A, 4V
125 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
BC858W-QX
Nexperia USA Inc.

TRANS PNP 30V 0.1A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
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100 mA
30 V
600mV @ 5mA, 100mA
15nA (ICBO)
125 @ 2mA, 5V
200 mW
100MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323