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Transistors - Bipolaires (BJT) - Simples

Dossiers 20 307
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA949-Y(T6JVC1,FM
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock4 400
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
STX13005G-AP
STMicroelectronics

TRANS NPN 400V 3A TO-92AP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
  • Power - Max: 2.8W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92AP
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock4 144
3A
400V
5V @ 750mA, 3A
1mA
8 @ 2A, 5V
2.8W
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92AP
BC327A_J35Z
Fairchild/ON Semiconductor

TRANS PNP 45V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3 888
800mA
45V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MJE180PWD
Fairchild/ON Semiconductor

TRANS NPN 40V 3A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
  • Power - Max: 1.5W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
paquet: TO-225AA, TO-126-3
Stock4 912
3A
40V
1.7V @ 600mA, 3A
100nA (ICBO)
50 @ 100mA, 1V
1.5W
50MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
hot BDX33B
Fairchild/ON Semiconductor

TRANS NPN 80V 10A TO-220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
  • Power - Max: 70W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
paquet: TO-220-3
Stock6 192
10A
80V
2.5V @ 6mA, 3A
500µA
750 @ 3A, 3V
70W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
hot 2N6045
ON Semiconductor

TRANS NPN DARL 100V 8A TO220AB

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
  • Power - Max: 75W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock10 404
8A
100V
2V @ 12mA, 3A
20µA
1000 @ 3A, 4V
75W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot 2SB07100RL
Panasonic Electronic Components

TRANS PNP 25V 0.5A MINI 3P

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
paquet: TO-236-3, SC-59, SOT-23-3
Stock26 940
500mA
25V
600mV @ 30mA, 300mA
100nA (ICBO)
120 @ 150mA, 10V
200mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
2SD0874A0L
Panasonic Electronic Components

TRANS NPN 50V 1A MINI-PWR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F1
paquet: TO-243AA
Stock5 504
1A
50V
400mV @ 50mA, 500mA
100nA (ICBO)
85 @ 500mA, 10V
1W
200MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F1
hot MJ2955
Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-BIPOLAR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 115W
  • Frequency - Transition: 2.5MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: TO-204AA, TO-3
Stock65 448
15A
70V
3V @ 3.3A, 10A
700µA
20 @ 4A, 4V
115W
2.5MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
hot 2N4918
Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 1V
  • Power - Max: 30W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
paquet: TO-225AA, TO-126-3
Stock15 864
1A
40V
600mV @ 100mA, 1A
100µA (ICBO)
40 @ 50mA, 1V
30W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
hot 2SD1664T100P
Rohm Semiconductor

TRANS NPN 32V 1A SOT-89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
  • Power - Max: 2W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
paquet: TO-243AA
Stock13 356
1A
32V
400mV @ 50mA, 500mA
500nA (ICBO)
82 @ 100mA, 3V
2W
150MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
BCP56-10,115
Nexperia USA Inc.

TRANS NPN 80V 1A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 960mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: TO-261-4, TO-261AA
Stock6 176
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
960mW
180MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot BD17510STU
Fairchild/ON Semiconductor

TRANS NPN 45V 3A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 30W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
paquet: TO-225AA, TO-126-3
Stock6 348
3A
45V
800mV @ 100mA, 1A
100µA (ICBO)
63 @ 150mA, 2V
30W
3MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
CMLT7820G TR
Central Semiconductor Corp

TRANS PNP 60V 1A SOT563

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
paquet: SOT-563, SOT-666
Stock4 064
1A
60V
340mV @ 100mA, 1A
100nA (ICBO)
150 @ 500mA, 5V
250mW
150MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot DSA5001R0L
Panasonic Electronic Components

TRANS PNP 50V 0.1A SMINI3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2-B
paquet: SC-85
Stock72 000
100mA
50V
500mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
150mW
150MHz
150°C (TJ)
Surface Mount
SC-85
SMini3-F2-B
hot BCX17TA
Diodes Incorporated

TRANS PNP 45V 0.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock21 600
500mA
45V
620mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
330mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
CMPT8099 TR
Central Semiconductor Corp

TRANS NPN 80V 0.5A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock28 710
500mA
80V
300mV @ 10mA, 100mA
100nA (ICBO)
100 @ 1mA, 5V
350mW
150MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
FJD5304DTF
Fairchild/ON Semiconductor

TRANS NPN 400V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
  • Power - Max: 30W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock248 046
4A
400V
1.5V @ 500mA, 2.5A
100µA
8 @ 2A, 5V
30W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
PN5139
onsemi

TRANS PNP 20V 0.1A TO92S

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
paquet: -
Request a Quote
100 mA
20 V
150mV @ 100µA, 1mA
50nA
40 @ 1mA, 10V
625 mW
-
-
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
2C6193JS
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JAN2N5686
Microchip Technology

TRANS NPN 80V 500UA TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 µA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
  • Power - Max: 300 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: -
Request a Quote
500 µA
80 V
5V @ 10A, 50A
500µA
15 @ 25A, 2V
300 W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
MMBT200-FS
Fairchild Semiconductor

TRANS PNP 45V 0.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
  • Power - Max: 350 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: -
Request a Quote
500 mA
45 V
400mV @ 20mA, 200mA
50nA
100 @ 150mA, 5V
350 mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MSC2712GT1
onsemi

TRANS SS GP NPN 50V SC59

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
paquet: -
Request a Quote
100 mA
50 V
500mV @ 10mA, 100mA
100nA
200 @ 2mA, 6V
200 mW
50MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
2SC1623-L5-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: -
Request a Quote
100 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
135 @ 1mA, 6V
200 mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SD1592-AZ
Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: -
paquet: -
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5 A
500 V
1.5V @ 5mA, 2A
10µA (ICBO)
400 @ 2A, 2V
1.5 W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
-
2N3489
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 7.5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 115 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package: TO-61
paquet: -
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7.5 A
100 V
-
-
-
115 W
-
-
Stud Mount
TO-211MA, TO-210AC, TO-61-4, Stud
TO-61
2N5289
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 116 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package: TO-61
paquet: -
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10 A
100 V
-
-
-
116 W
-
-
Stud Mount
TO-211MA, TO-210AC, TO-61-4, Stud
TO-61
JANSR2N3635UB
Microchip Technology

TRANS PNP 140V 1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
paquet: -
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1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 10mA, 10V
1.5 W
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB