Page 244 - Transistors - Bipolaires (BJT) - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - Simples

Dossiers 20 307
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BCX5616E6433HTMA1
Infineon Technologies

TRANS NPN 80V 1A SOT-89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
paquet: TO-243AA
Stock2 704
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
2W
100MHz
150°C (TJ)
Surface Mount
TO-243AA
PG-SOT89
BC858BL3E6327
Infineon Technologies

TRANS PNP 30V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock7 632
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
JAN2N3057A
Microsemi Corporation

TRANS NPN 80V 1A TO46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
paquet: TO-206AB, TO-46-3 Metal Can
Stock6 800
1A
80V
500mV @ 50mA, 500mA
10nA
50 @ 500mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46-3
MPS6515_D74Z
Fairchild/ON Semiconductor

TRANS NPN 25V 0.2A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3 904
200mA
25V
500mV @ 5mA, 50mA
50nA (ICBO)
250 @ 2mA, 10V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
KSC2710YTA
Fairchild/ON Semiconductor

TRANS NPN 20V 0.5A TO-92S

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92S
paquet: TO-226-3, TO-92-3 Short Body (Formed Leads)
Stock6 976
500mA
20V
400mV @ 50mA, 500mA
100nA (ICBO)
120 @ 100mA, 1V
300mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92S
2SA1309ASA
Panasonic Electronic Components

TRANS PNP 50V 0.1A NS-B1

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
paquet: NS-B1
Stock3 520
100mA
50V
300mV @ 5mA, 50mA
1µA
290 @ 2mA, 10V
300mW
80MHz
150°C (TJ)
Through Hole
NS-B1
NS-B1
JANTX2N5157
Microsemi Corporation

TRANS NPN 500V 3.5A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3.5A
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 700mA, 3.5A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
paquet: TO-204AA, TO-3
Stock2 064
3.5A
500V
2.5V @ 700mA, 3.5A
250µA
30 @ 1A, 5V
5W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
2N335A
Microsemi Corporation

TRANS NPN 45V 10MA

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-5
  • Supplier Device Package: TO-5
paquet: TO-5
Stock3 408
-
-
-
-
-
-
-
-
Through Hole
TO-5
TO-5
JANTX2N5152
Microsemi Corporation

TRANS NPN 80V 2A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: TO-205AD, TO-39-3 Metal Can
Stock5 712
2A
80V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
TIP29A-BP
Micro Commercial Co

TRANS NPN 60V 1A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
  • Power - Max: 30W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
paquet: TO-220-3
Stock3 552
1A
60V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
30W
3MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
ZTX688BSTZ
Diodes Incorporated

TRANS NPN 12V 3A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 20mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
paquet: E-Line-3, Formed Leads
Stock5 920
3A
12V
350mV @ 20mA, 3A
100nA (ICBO)
500 @ 100mA, 2V
1W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot 2SC4132T100Q
Rohm Semiconductor

TRANS NPN 120V 2A SOT-89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
paquet: TO-243AA
Stock46 200
2A
120V
2V @ 100mA, 1A
1µA (ICBO)
120 @ 100mA, 5V
2W
80MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
hot STB13005-1
STMicroelectronics

TRANS NPN 400V 4A I2PAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
  • Power - Max: 75W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: I2PAK
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock143 388
4A
400V
1V @ 1A, 4A
1mA
8 @ 2A, 5V
75W
-
150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
I2PAK
hot MJE350STU
Fairchild/ON Semiconductor

TRANS PNP 300V 0.5A TO-126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 20W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
paquet: TO-225AA, TO-126-3
Stock26 628
500mA
300V
-
100µA (ICBO)
30 @ 50mA, 10V
20W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
CMPT3904G TR
Central Semiconductor Corp

TRANS NPN 40V 0.2A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock49 800
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BC846CMTF
Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 310mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock23 358
100mA
65V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
310mW
300MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N6287WP
onsemi

TRANS PNP DARL 100V 20A TO204

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NTE104MP
NTE Electronics, Inc

TRANS PNP 35V 10A TO3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 35 V
  • Vce Saturation (Max) @ Ib, Ic: 290mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 1mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V
  • Power - Max: 90 W
  • Frequency - Transition: 300kHz
  • Operating Temperature: 100°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: -
Request a Quote
10 A
35 V
290mV @ 400mA, 4A
1mA (ICBO)
50 @ 20mA, 2V
90 W
300kHz
100°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
MJ10001
NTE Electronics, Inc

TRANS NPN DARL 400V 20A TO3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 20 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 20A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 5V
  • Power - Max: 175 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: -
Request a Quote
20 A
400 V
3V @ 1A, 20A
250µA
50 @ 5A, 5V
175 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
2SD1230
onsemi

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
  • Power - Max: 2.5 W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PB
paquet: -
Request a Quote
8 A
100 V
1.5V @ 8mA, 4A
100µA (ICBO)
1500 @ 4A, 3V
2.5 W
20MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PB
JANTX2N918
Microchip Technology

TRANS NPN 15V 0.05A

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSR2N5154
Microchip Technology

TRANS NPN 80V 0.001A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: -
Request a Quote
1 mA
80 V
1.5V @ 500mA, 5A
1mA
70 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANS2N5152
Microchip Technology

TRANS NPN 80V 0.001A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: -
Request a Quote
1 mA
80 V
1.5V @ 500mA, 5A
1mA
30 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANSD2N2221A
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
paquet: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
2N5785
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N6425
Microchip Technology

TRANS PNP 300V 1A TO66

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 20 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
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1 A
300 V
-
-
-
20 W
-
-
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
ABC857BW-HF
Comchip Technology

TRANS PNP 45V 0.1A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
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100 mA
45 V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
200 mW
250MHz
-65°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
TIP31-PBFREE
Central Semiconductor Corp

TRANS NPN 40V 3A TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 40 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
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3 A
40 V
1.2V @ 375mA, 3A
300µA
25 @ 1A, 4V
40 W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3