Page 211 - Transistors - Bipolaires (BJT) - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - Simples

Dossiers 20 307
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BD545C-S
Bourns Inc.

TRANS NPN DARL 100V 15A

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 4V
  • Power - Max: 3.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
paquet: TO-218-3
Stock6 272
15A
100V
1V @ 2A, 10A
700µA
10 @ 10A, 4V
3.5W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93
KSB798GTF
Fairchild/ON Semiconductor

TRANS PNP 25V 1A SOT-89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 2W
  • Frequency - Transition: 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
paquet: TO-243AA
Stock3 952
1A
25V
400mV @ 100mA, 1A
100nA (ICBO)
200 @ 100mA, 1V
2W
110MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot 2N6193
Microsemi Corporation

TRANS PNP 100V 5A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: TO-205AD, TO-39-3 Metal Can
Stock4 528
5A
100V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANTX2N3637L
Microsemi Corporation

TRANS PNP 175V 1A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
paquet: TO-205AA, TO-5-3 Metal Can
Stock3 376
1A
175V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
ZTX696BSTZ
Diodes Incorporated

TRANS NPN 180V 0.5A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 70MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
paquet: E-Line-3, Formed Leads
Stock2 064
500mA
180V
250mV @ 5mA, 200mA
100nA (ICBO)
150 @ 200mA, 5V
1W
70MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
NJVMJD253T4G-VF01
ON Semiconductor

TRANS PNP 100V 4A DPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
  • Power - Max: 12.5W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 744
4A
100V
600mV @ 100mA, 1A
100nA (ICBO)
40 @ 200mA, 1V
12.5W
40MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
2SC6099-E
ON Semiconductor

TRANS NPN 100V 2A TP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock2 704
2A
100V
165mV @ 100mA, 1A
1µA (ICBO)
300 @ 100mA, 5V
800mW
300MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
BC56-16PA,115
Nexperia USA Inc.

TRANSISTOR NPN 80V 1A SOT1061

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 420mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN
  • Supplier Device Package: DFN2020-3
paquet: 3-UDFN
Stock7 680
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
420mW
180MHz
150°C (TJ)
Surface Mount
3-UDFN
DFN2020-3
hot TIP30CG
ON Semiconductor

TRANS PNP 100V 1A TO220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock7 360
1A
100V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
2W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot KSC945CGTA
Fairchild/ON Semiconductor

TRANS NPN 50V 0.15A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
  • Power - Max: 250mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock146 304
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 1mA, 6V
250mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PMMT491A,215
Nexperia USA Inc.

TRANS NPN 40V 1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
paquet: TO-236-3, SC-59, SOT-23-3
Stock3 040
1A
40V
500mV @ 100mA, 1A
100nA
300 @ 500mA, 5V
250mW
150MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
2SD2671TL
Rohm Semiconductor

TRANS NPN 30V 2A TSMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: TSMT3
paquet: SC-96
Stock3 424
2A
30V
370mV @ 75mA, 1.5A
100nA (ICBO)
270 @ 200mA, 2V
1W
280MHz
150°C (TJ)
Surface Mount
SC-96
TSMT3
BCP55TA
Diodes Incorporated

TRANS NPN 60V 1A SOT223-4

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: TO-261-4, TO-261AA
Stock22 392
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
2W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
PBSS4021PZ,115
Nexperia USA Inc.

TRANS PNP 20V 6.6A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6.6A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 350mA, 7A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
  • Power - Max: 2.6W
  • Frequency - Transition: 85MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: TO-261-4, TO-261AA
Stock19 350
6.6A
20V
240mV @ 350mA, 7A
100nA
150 @ 4A, 2V
2.6W
85MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BUX87
STMicroelectronics

TRANS NPN 450V 0.5A SOT-32

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 20mA, 200mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 40mA, 5V
  • Power - Max: 40W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: SOT-32-3
paquet: TO-225AA, TO-126-3
Stock37 620
500mA
450V
1V @ 20mA, 200mA
100µA
12 @ 40mA, 5V
40W
20MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
SOT-32-3
hot 2SA1668
Sanken

TRANS PNP 200V 2A TO220F

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V
  • Power - Max: 25W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
paquet: TO-220-3 Full Pack
Stock36 540
2A
200V
1V @ 70mA, 700mA
10µA (ICBO)
60 @ 700mA, 10V
25W
20MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
2N3442-PBFREE
Central Semiconductor Corp

TRANS NPN 140V 10A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
  • Current - Collector Cutoff (Max): 200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
  • Power - Max: 117 W
  • Frequency - Transition: 80kHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: -
Stock192
10 A
140 V
5V @ 2A, 10A
200mA
20 @ 3A, 4V
117 W
80kHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
JANSD2N3019S
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
10nA
100 @ 150mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANSL2N3635UB
Microchip Technology

TRANS PNP 140V 1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
paquet: -
Request a Quote
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 10mA, 10V
1.5 W
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
JANSP2N5151
Microchip Technology

RH POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: -
Request a Quote
2 A
80 V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANSL2N3439
Microchip Technology

RH POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: -
Request a Quote
1 A
350 V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800 mW
-
-55°C ~ 200°C
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
495220TU_SN00120
onsemi

TRANS NPN DARL 325V 4A TO220-3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 325 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A
  • Current - Collector Cutoff (Max): 5mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 5V
  • Power - Max: 40 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
paquet: -
Request a Quote
4 A
325 V
1.5V @ 5mA, 2A
5mA (ICBO)
1000 @ 3A, 5V
40 W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2N3392-PBFREE
Central Semiconductor Corp

TRANS NPN 25V TO92-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
  • Power - Max: -
  • Frequency - Transition: 120MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: -
Stock29 910
-
25 V
-
100nA (ICBO)
150 @ 2mA, 4.5V
-
120MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TTA1713-Y-LF
Toshiba Semiconductor and Storage

TRANS PNP 45V 0.5A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: -
Stock9 000
500 mA
45 V
400mV @ 50mA, 500mA
100nA (ICBO)
120 @ 100mA, 1V
200 mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
JAN2N3507AU4
Microchip Technology

TRANS NPN 50V 1UA U4

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
paquet: -
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3 A
50 V
1.5V @ 250mA, 2.5A
1µA
35 @ 500mA, 1V
1 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
BCP68-25-ZLX
Nexperia USA Inc.

TRANS NPN 20V 2A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
  • Power - Max: 1.35 W
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: -
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2 A
20 V
600mV @ 200mA, 2A
100nA (ICBO)
160 @ 500mA, 1V
1.35 W
170MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BCX51-QX
Nexperia USA Inc.

BCX51-Q/SOT89/MPT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
paquet: -
Stock3 000
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
500 mW
145MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
2SB1120G-TD-E
onsemi

BIP PNP 2.5A 10V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
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