Page 168 - Transistors - Bipolaires (BJT) - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - Simples

Dossiers 20 307
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot 2SA2210
ON Semiconductor

TRANS PNP 50V 20A TO-220ML

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
  • Power - Max: 2W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3SG
paquet: TO-220-3 Full Pack
Stock16 596
20A
50V
500mV @ 350mA, 7A
10µA (ICBO)
150 @ 1A, 2V
2W
140MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3SG
MPSL01_D27Z
Fairchild/ON Semiconductor

TRANS NPN 120V 0.2A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5 120
200mA
120V
300mV @ 5mA, 50mA
1µA (ICBO)
50 @ 10mA, 5V
625mW
60MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BUD42DG
ON Semiconductor

TRANS NPN 350V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock2 944
4A
350V
1V @ 500mA, 2A
100µA
10 @ 2A, 5V
25W
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
BC487BG
ON Semiconductor

TRANS NPN 60V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock5 472
500mA
60V
300mV @ 100mA, 1A
100nA (ICBO)
160 @ 100mA, 2V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N4403RL
ON Semiconductor

TRANS PNP 40V 0.6A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock30 060
600mA
40V
750mV @ 50mA, 500mA
-
100 @ 150mA, 2V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
495220TU
Fairchild/ON Semiconductor

TRANS NPN DARL 325V 4A TO-220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 325V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A
  • Current - Collector Cutoff (Max): 5mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 5V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
paquet: TO-220-3
Stock4 848
4A
325V
1.5V @ 5mA, 2A
5mA (ICBO)
1000 @ 3A, 5V
40W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
BUL810
STMicroelectronics

TRANS NPN 450V 15A TO-247

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 2.4A, 12A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Power - Max: 125W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
paquet: TO-247-3
Stock3 392
15A
450V
5V @ 2.4A, 12A
250µA
10 @ 5A, 5V
125W
-
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
BC307B
Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock3 936
100mA
45V
500mV @ 5mA, 100mA
15nA
180 @ 2mA, 5V
500mW
130MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N3700
STMicroelectronics

TRANS NPN 80V 1A TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
paquet: TO-206AA, TO-18-3 Metal Can
Stock3 792
1A
80V
500mV @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
500mW
100MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
2N3701
Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1.8W
  • Frequency - Transition: 80MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
paquet: TO-206AA, TO-18-3 Metal Can
Stock6 032
1A
80V
500mV @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
1.8W
80MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
ZXT951KQTC
Diodes Incorporated

PWR LOW SAT TRANSISTOR TO252

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 2.1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock2 624
6A
60V
400mV @ 600mA, 6A
20nA (ICBO)
100 @ 2A, 1V
2.1W
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
hot 2SB0709AQL
Panasonic Electronic Components

TRANS PNP 45V 0.1A MINI 3P

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
paquet: TO-236-3, SC-59, SOT-23-3
Stock18 000
100mA
45V
500mV @ 10mA, 100mA
100µA
160 @ 2mA, 10V
200mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
MMBT3906FA-7B
Diodes Incorporated

TRANS PNP 40V 0.2A X2-DFN0806-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 435mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: -
paquet: 3-XFDFN
Stock4 272
200mA
40V
400mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
435mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-XFDFN
-
hot KSD471AGTA
Fairchild/ON Semiconductor

TRANS NPN 30V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 800mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock336 000
1A
30V
500mV @ 100mA, 1A
100nA (ICBO)
200 @ 100mA, 1V
800mW
130MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS5240ZF
Nexperia USA Inc.

TRANS PNP 40V 2A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 650mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: TO-261-4, TO-261AA
Stock34 998
2A
40V
650mV @ 200mA, 2A
100nA
300 @ 1mA, 5V
650mW
150MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot 2SA1417T-TD-E
ON Semiconductor

TRANS PNP 100V 2A SOT89-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
paquet: TO-243AA
Stock10 296
2A
100V
400mV @ 100mA, 1A
100nA (ICBO)
100 @ 100mA, 5V
500mW
120MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP
hot 2PB709ART,215
Nexperia USA Inc.

TRANS PNP 45V 0.1A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
paquet: TO-236-3, SC-59, SOT-23-3
Stock3 660 000
100mA
45V
500mV @ 10mA, 100mA
10nA (ICBO)
210 @ 2mA, 10V
250mW
70MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BC847CE6327HTSA1
Infineon Technologies

TRANS NPN 45V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock684 102
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
330mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
hot FZT688BTA
Diodes Incorporated

TRANS NPN 12V 4A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 4A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 3A, 2V
  • Power - Max: 2W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: TO-261-4, TO-261AA
Stock70 800
4A
12V
400mV @ 50mA, 4A
100nA (ICBO)
400 @ 3A, 2V
2W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANTXV2N3635UB-TR
Microchip Technology

TRANS PNP 140V 1A 3SMD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
paquet: -
Request a Quote
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1.5 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JANKCBP2N2906A
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
paquet: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MMBZ15VA-TR
Nexperia USA Inc.

MMBZ15VA-T/SOT23/TO-236AB

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock9 000
-
-
-
-
-
-
-
-
-
-
-
FMBM5401-SB74001
onsemi

TRANS PNP 150V 0.6A SUPERSOT-6

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 700 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT™-6
paquet: -
Request a Quote
600 mA
150 V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
700 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT™-6
CP304V-MPSA06-CT
Central Semiconductor Corp

TRANS NPN 80V 0.5A DIE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: -
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
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500 mA
80 V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
-
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
2N5416L
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 750 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
paquet: -
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1 A
300 V
2V @ 5mA, 50mA
1mA
30 @ 50mA, 10V
750 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
2N6677
Microchip Technology

TRANS NPN 350V 15A TO204AA

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3A, 15A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 15A, 3V
  • Power - Max: 175 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
paquet: -
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15 A
350 V
1.5V @ 3A, 15A
100µA
8 @ 15A, 3V
175 W
3MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
S9014-ML
MOSLEADER

45V 200mW 100mA NPN SOT-23

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
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-
-
-
-
-
-
-
-
-
-
-
2SA673B-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR,

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 35 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 3V
  • Power - Max: 400 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
paquet: -
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500 mA
35 V
600mV @ 15mA, 150mA
500nA (ICBO)
60 @ 10mA, 3V
400 mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92