Page 155 - Transistors - Bipolaires (BJT) - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC6040,T2Q(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 800V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	paquet: SC-71	Stock4 784	1A	800V	1V @ 100mA, 800mA	100µA (ICBO)	60 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
JANTXV2N4033	Microsemi Corporation	TRANS PNP 80V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	paquet: TO-205AD, TO-39-3 Metal Can	Stock6 160	1A	80V	1V @ 100mA, 1A	10µA (ICBO)	100 @ 100mA, 5V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
PN100A_D75Z	Fairchild/ON Semiconductor	TRANS NPN 45V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V Power - Max: 625mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock7 152	500mA	45V	400mV @ 20mA, 200mA	50nA	300 @ 10mA, 1V	625mW	250MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSA56_D75Z	Fairchild/ON Semiconductor	TRANS PNP 80V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock7 952	500mA	80V	200mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPS6562_D74Z	Fairchild/ON Semiconductor	TRANS PNP 25V 1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V Power - Max: 625mW Frequency - Transition: 60MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5 008	1A	25V	500mV @ 50mA, 500mA	100nA	50 @ 500mA, 1V	625mW	60MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC308C_J35Z	Fairchild/ON Semiconductor	TRANS PNP 25V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6 320	100mA	25V	500mV @ 5mA, 100mA	15nA	380 @ 2mA, 5V	500mW	130MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
TIP132G	ON Semiconductor	TRANS NPN DARL 100V 8A TO-220AB Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 30mA, 6A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	paquet: TO-220-3	Stock5 616	8A	100V	3V @ 30mA, 6A	500µA	1000 @ 4A, 4V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
BC372	ON Semiconductor	TRANS NPN DARL 100V 1A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA)	Stock6 512	1A	100V	1.1V @ 250µA, 250mA	100nA (ICBO)	10000 @ 100mA, 5V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSD1616ALBU	Fairchild/ON Semiconductor	TRANS NPN 60V 1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Power - Max: 750mW Frequency - Transition: 160MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA)	Stock4 400	1A	60V	300mV @ 50mA, 1A	100nA (ICBO)	300 @ 100mA, 2V	750mW	160MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSC2787OBU	Fairchild/ON Semiconductor	TRANS NPN 30V 0.05A TO-92S Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	paquet: TO-226-3, TO-92-3 Short Body	Stock6 256	50mA	30V	300mV @ 1mA, 10mA	100nA (ICBO)	70 @ 1mA, 6V	250mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
BC33825BU	Fairchild/ON Semiconductor	TRANS NPN 25V 0.8A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA)	Stock2 544	800mA	25V	700mV @ 50mA, 500mA	100nA	160 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
JAN2N5582	Microsemi Corporation	TRANS NPN 50V 0.8A TO46 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46-3	paquet: TO-206AB, TO-46-3 Metal Can	Stock6 848	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	500mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46-3
SBCP56T3G	ON Semiconductor	TRANS NPN 80V 1A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1.5W Frequency - Transition: 130MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	paquet: TO-261-4, TO-261AA	Stock4 832	1A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1.5W	130MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-3
2PC4081S,135	Nexperia USA Inc.	TRANS NPN 50V 0.15A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	paquet: SC-70, SOT-323	Stock2 800	150mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	270 @ 1mA, 6V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
2SD974-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SAR544R	Diotec Semiconductor	TRANS PNP 80V 2.5A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 500 mW Frequency - Transition: 280MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	paquet: -	Request a Quote	2.5 A	80 V	400mV @ 50mA, 1A	1µA (ICBO)	120 @ 100mA, 3V	500 mW	280MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
JANTXV2N3716P	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Power - Max: 5 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	paquet: -	Request a Quote	10 A	80 V	2.5V @ 2A, 10A	1mA	50 @ 1A, 2V	5 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
90024-04TX	Microchip Technology	POWER INTEGRATED CIRCUIT Transistor Type: PNP Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
SST3906HZGT116	Rohm Semiconductor	TRANS PNP 40V 0.2A SST3 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 200 mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	paquet: -	Stock7 605	200 mA	40 V	400mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	200 mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
2N4238	Microchip Technology	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	paquet: -	Request a Quote	1 A	60 V	600mV @ 100mA, 1A	100nA	30 @ 500mA, 1V	1 W	-	-65°C ~ 200°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N5286	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 50 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	paquet: -	Request a Quote	5 A	100 V	1.5V @ 1mA, 5mA	-	-	50 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
2N5960	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 175 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	paquet: -	Request a Quote	20 A	100 V	-	-	-	175 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
2N6128	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 900mV @ 500mA, 5A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 5V Power - Max: 67 W Frequency - Transition: 50MHz Operating Temperature: - Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	paquet: -	Request a Quote	10 A	80 V	900mV @ 500mA, 5A	-	30 @ 5A, 5V	67 W	50MHz	-	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
JANKCBR2N3700	Microchip Technology	TRANS NPN 80V 1A TO18 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	paquet: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
JANTX2N5680	Microchip Technology	PNP TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	paquet: -	Request a Quote	1 A	120 V	1V @ 50mA, 500mA	10µA	40 @ 250mA, 2V	1 W	-	-65°C ~ 200°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
FJP5555ATU	Fairchild Semiconductor	POWER BIPOLAR TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SA1980-G-AP	Micro Commercial Co	TRANS PNP 50V 0.15A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 6V Power - Max: 625 mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	paquet: -	Request a Quote	150 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2A, 6V	625 mW	80MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
2N3499UB-TR	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	paquet: -	Request a Quote	500 mA	100 V	600mV @ 30mA, 300mA	10µA (ICBO)	100 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB

2SC6040,T2Q(J

Toshiba Semiconductor and Storage

TRANS NPN 1A 800V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

paquet: SC-71

Stock4 784

1A

800V

1V @ 100mA, 800mA

100µA (ICBO)

60 @ 100mA, 5V

1W

-

150°C (TJ)

Through Hole

SC-71

MSTM

JANTXV2N4033

Microsemi Corporation

TRANS PNP 80V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

paquet: TO-205AD, TO-39-3 Metal Can

Stock6 160

1A

80V

1V @ 100mA, 1A

10µA (ICBO)

100 @ 100mA, 5V

800mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

PN100A_D75Z

Fairchild/ON Semiconductor

TRANS NPN 45V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock7 152

500mA

45V

400mV @ 20mA, 200mA

50nA

300 @ 10mA, 1V

625mW

250MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSA56_D75Z

Fairchild/ON Semiconductor

TRANS PNP 80V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock7 952

500mA

80V

200mV @ 10mA, 100mA

100nA

100 @ 100mA, 1V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPS6562_D74Z

Fairchild/ON Semiconductor

TRANS PNP 25V 1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Power - Max: 625mW
Frequency - Transition: 60MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5 008

1A

25V

500mV @ 50mA, 500mA

100nA

50 @ 500mA, 1V

625mW

60MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC308C_J35Z

Fairchild/ON Semiconductor

TRANS PNP 25V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6 320

100mA

25V

500mV @ 5mA, 100mA

15nA

380 @ 2mA, 5V

500mW

130MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

TIP132G

ON Semiconductor

TRANS NPN DARL 100V 8A TO-220AB

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 30mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

paquet: TO-220-3

Stock5 616

8A

100V

3V @ 30mA, 6A

500µA

1000 @ 4A, 4V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

BC372

ON Semiconductor

TRANS NPN DARL 100V 1A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA)

Stock6 512

1A

100V

1.1V @ 250µA, 250mA

100nA (ICBO)

10000 @ 100mA, 5V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSD1616ALBU

Fairchild/ON Semiconductor

TRANS NPN 60V 1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 750mW
Frequency - Transition: 160MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA)

Stock4 400

1A

60V

300mV @ 50mA, 1A

100nA (ICBO)

300 @ 100mA, 2V

750mW

160MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSC2787OBU

Fairchild/ON Semiconductor

TRANS NPN 30V 0.05A TO-92S

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

paquet: TO-226-3, TO-92-3 Short Body

Stock6 256

50mA

30V

300mV @ 1mA, 10mA

100nA (ICBO)

70 @ 1mA, 6V

250mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

BC33825BU

Fairchild/ON Semiconductor

TRANS NPN 25V 0.8A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA)

Stock2 544

800mA

25V

700mV @ 50mA, 500mA

100nA

160 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

JAN2N5582

Microsemi Corporation

TRANS NPN 50V 0.8A TO46

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46-3

paquet: TO-206AB, TO-46-3 Metal Can

Stock6 848

800mA

50V

1V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

500mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46-3

SBCP56T3G

ON Semiconductor

TRANS NPN 80V 1A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.5W
Frequency - Transition: 130MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

paquet: TO-261-4, TO-261AA

Stock4 832

1A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1.5W

130MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-3

2PC4081S,135

Nexperia USA Inc.

TRANS NPN 50V 0.15A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

paquet: SC-70, SOT-323

Stock2 800

150mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

270 @ 1mA, 6V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

2SD974-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

2SAR544R

Diotec Semiconductor

TRANS PNP 80V 2.5A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 500 mW
Frequency - Transition: 280MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

paquet: -

Request a Quote

2.5 A

80 V

400mV @ 50mA, 1A

1µA (ICBO)

120 @ 100mA, 3V

500 mW

280MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

JANTXV2N3716P

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Power - Max: 5 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

paquet: -

Request a Quote

10 A

80 V

2.5V @ 2A, 10A

1mA

50 @ 1A, 2V

5 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

90024-04TX

Microchip Technology

POWER INTEGRATED CIRCUIT

Transistor Type: PNP
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

paquet: -

Request a Quote

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

SST3906HZGT116

Rohm Semiconductor

TRANS PNP 40V 0.2A SST3

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200 mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

paquet: -

Stock7 605

200 mA

40 V

400mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

200 mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

2N4238

Microchip Technology

NPN TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

paquet: -

Request a Quote

1 A

60 V

600mV @ 100mA, 1A

100nA

30 @ 500mA, 1V

1 W

-

-65°C ~ 200°C

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2N5286

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 50 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

paquet: -

Request a Quote

5 A

100 V

1.5V @ 1mA, 5mA

-

50 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

2N5960

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 175 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package: TO-61

paquet: -

Request a Quote

20 A

100 V

-

175 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-211MA, TO-210AC, TO-61-4, Stud

TO-61

2N6128

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 500mA, 5A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 5V
Power - Max: 67 W
Frequency - Transition: 50MHz
Operating Temperature: -
Mounting Type: Stud Mount
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package: TO-61

paquet: -

Request a Quote

10 A

80 V

900mV @ 500mA, 5A

-

30 @ 5A, 5V

67 W

50MHz

-

Stud Mount

TO-211MA, TO-210AC, TO-61-4, Stud

TO-61

JANKCBR2N3700

Microchip Technology

TRANS NPN 80V 1A TO18

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

paquet: -

Request a Quote

1 A

80 V

500mV @ 50mA, 500mA

10nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

JANTX2N5680

Microchip Technology

PNP TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

paquet: -

Request a Quote

1 A

120 V

1V @ 50mA, 500mA

10µA

40 @ 250mA, 2V

1 W

-

-65°C ~ 200°C

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

FJP5555ATU

Fairchild Semiconductor

POWER BIPOLAR TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

2SA1980-G-AP

Micro Commercial Co

TRANS PNP 50V 0.15A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 6V
Power - Max: 625 mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

paquet: -

Request a Quote

150 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2A, 6V

625 mW

80MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

2N3499UB-TR

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

paquet: -

Request a Quote

500 mA

100 V

600mV @ 30mA, 300mA

10µA (ICBO)

100 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB