Page 132 - Transistors - Bipolaires (BJT) - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - Simples

Dossiers 20 307
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC850CWE6327HTSA1
Infineon Technologies

TRANS NPN 45V 0.1A SOT-323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
paquet: SC-70, SOT-323
Stock2 848
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
2PB1219AR/ZLX
NXP

TRANS PNP 50V 0.5A SOT323

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock7 136
-
-
-
-
-
-
-
-
-
-
-
BDW83A-S
Bourns Inc.

TRANS NPN DARL 60V 15A

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
  • Power - Max: 3.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
paquet: TO-218-3
Stock2 720
15A
60V
4V @ 150mA, 15A
1mA
750 @ 6A, 3V
3.5W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93
hot HD1520FX
STMicroelectronics

TRANS NPN 700V 15A ISOWATT218FX

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 1.8A, 9A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 9A, 5V
  • Power - Max: 64W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOWATT218FX
  • Supplier Device Package: ISOWATT-218FX
paquet: ISOWATT218FX
Stock5 136
15A
700V
3V @ 1.8A, 9A
200µA
5.5 @ 9A, 5V
64W
-
150°C (TJ)
Through Hole
ISOWATT218FX
ISOWATT-218FX
KSC1507O
Fairchild/ON Semiconductor

TRANS NPN 300V 200UA TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200µA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
  • Power - Max: 15W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
paquet: TO-220-3
Stock4 224
200µA
300V
2V @ 5mA, 50mA
100µA (ICBO)
70 @ 10mA, 10V
15W
80MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
KSA733CLBU
Fairchild/ON Semiconductor

TRANS PNP 50V 0.15A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 1mA, 6V
  • Power - Max: 250mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock2 624
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
350 @ 1mA, 6V
250mW
180MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BD3796STU
Fairchild/ON Semiconductor

TRANS NPN 80V 2A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 2µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
paquet: TO-225AA, TO-126-3
Stock7 344
2A
80V
1V @ 100mA, 1A
2µA (ICBO)
40 @ 150mA, 2V
25W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
hot MJF122G
ON Semiconductor

TRANS NPN DARL 100V 5A TO220FP

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
paquet: TO-220-3 Full Pack
Stock12 984
5A
100V
3.5V @ 20mA, 5A
10µA
2000 @ 3A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
hot FZT751TA
Diodes Incorporated

TRANS PNP 60V 3A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: TO-261-4, TO-261AA
Stock471 744
3A
60V
600mV @ 300mA, 3A
100nA (ICBO)
100 @ 500mA, 2V
2W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
MJD31CT4-A
STMicroelectronics

TRANS NPN 100V 3A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 15W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 136
3A
100V
1.2V @ 375mA, 3A
50µA
10 @ 3A, 4V
15W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot BD435S
Fairchild/ON Semiconductor

TRANS NPN 32V 4A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
  • Power - Max: 36W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
paquet: TO-225AA, TO-126-3
Stock361 920
4A
32V
500mV @ 200mA, 2A
100µA
40 @ 10mA, 5V
36W
3MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
FJP1943RTU
Fairchild/ON Semiconductor

TRANS PNP 230V 15A TO-220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Power - Max: 80W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
paquet: TO-220-3
Stock16 890
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
55 @ 1A, 5V
80W
30MHz
-50°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
JANSG2N2222AUB
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
paquet: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JANSM2N2221AUB-TR
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
paquet: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2SC4520S-TD-E
onsemi

BIP NPN 1.5A 45V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PBSS4032NXF
Nexperia USA Inc.

PBSS4032NX/SOT89/MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4.7 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 375mV @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 600 mW
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
paquet: -
Request a Quote
4.7 A
30 V
375mV @ 40mA, 4A
100nA
300 @ 1A, 2V
600 mW
145MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
KTA1270-O-AP
Micro Commercial Co

TRANS PNP 30V 0.5A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 500 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
paquet: -
Request a Quote
500 mA
30 V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 100mA, 1V
500 mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
JANSR2N3439
Microchip Technology

TRANS NPN 350V 1A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: -
Request a Quote
1 A
350 V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
CP742X-CM4209-CT
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5015S
Microsemi Corporation

TRANS NPN 1000V 0.2A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 5mA, 20mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: -
Request a Quote
200 mA
1000 V
1.8V @ 5mA, 20mA
10nA (ICBO)
30 @ 20mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANKCCL2N3501
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
paquet: -
Request a Quote
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
2N5671
Microchip Technology

TRANS NPN 90V 30A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30 A
  • Voltage - Collector Emitter Breakdown (Max): 90 V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
  • Current - Collector Cutoff (Max): 10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V
  • Power - Max: 6 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
paquet: -
Request a Quote
30 A
90 V
5V @ 6A, 30A
10mA
20 @ 20A, 5V
6 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
2N6134
Harris Corporation

PNP POWER TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 7 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 50 W
  • Frequency - Transition: 2.5MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
paquet: -
Request a Quote
7 A
80 V
2.5V @ 3.2A, 16A
-
-
50 W
2.5MHz
-
Through Hole
TO-220-3
TO-220-3
KTA1267-GR-BP
Micro Commercial Co

TRANS PNP 50V 0.15A TO92S

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 400 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
paquet: -
Request a Quote
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
400 mW
80MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
JANTX2N6649
Microchip Technology

TRANS PNP DARL 60V 10A TO204AA

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
paquet: -
Request a Quote
10 A
60 V
3V @ 100mA, 10A
1mA (ICBO)
1000 @ 5A, 3V
5 W
-
-65°C ~ 175°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
PXTA42F
Nexperia USA Inc.

PXTA42/SOT89/MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 1.3 W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
paquet: -
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100 mA
300 V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
1.3 W
50MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
BC846A-SNVL
Nexperia USA Inc.

TRANS NPN 65V 0.1A TO236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
paquet: -
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100 mA
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
250 mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
PMST5551-QX
Nexperia USA Inc.

PMST5551-Q/SOT323/SC-70

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: -
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300 mA
160 V
200mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V
200 mW
300MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323