Page 112 - Transistors - Bipolaires (BJT) - Simples, prépolarisés | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - Simples, prépolarisés

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Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
BCR 146F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 70mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
paquet: SOT-723
Stock6 032
70mA
50V
47k
22k
50 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
UNR31ANG0L
Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F1
paquet: SOT-723
Stock3 584
80mA
50V
4.7k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
100mW
Surface Mount
SOT-723
SSSMini3-F1
DDTC114TKA-7-F
Diodes Incorporated

TRANS PREBIAS NPN 200MW SC59-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock4 704
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 100µA, 1mA
500nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59-3
MUN2130T1G
ON Semiconductor

TRANS PREBIAS PNP 230MW SC59

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 144
100mA
50V
1k
1k
3 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
230mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
FJV3107RMTF
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock7 680
100mA
50V
22k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJN4307RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock6 816
100mA
50V
22k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
UNRF1A400A
Panasonic Electronic Components

TRANS PREBIAS PNP 100MW ML3-N2

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: ML3-N2
paquet: SC-101, SOT-883
Stock6 352
80mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
100mW
Surface Mount
SC-101, SOT-883
ML3-N2
hot UNR9215J0L
Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
paquet: SC-89, SOT-490
Stock2 836 572
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
125mW
Surface Mount
SC-89, SOT-490
SSMini3-F1
BCR169WH6327XTSA1
Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
paquet: SC-70, SOT-323
Stock2 448
100mA
50V
4.7k
-
120 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3
ADTC144EUAQ-13
Diodes Incorporated

PREBIAS TRANSISTOR SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 330mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: SC-70, SOT-323
Stock4 496
100mA
50V
47k
47k
-
-
-
250MHz
330mW
Surface Mount
SC-70, SOT-323
SOT-323
RN1418(TE85L,F)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock7 840
100mA
50V
47k
10k
50 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
DDTA123TCA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock3 472
100mA
50V
2.2k
-
100 @ 1mA, 5V
300mV @ 500µA, 5mA
500nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DTC114YUBTL
Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 70mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: UMT3F
paquet: SC-85
Stock26 472
70mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
200mW
Surface Mount
SC-85
UMT3F
PDTC144WT,215
Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 816
100mA
50V
47k
22k
60 @ 5mA, 5V
150mV @ 500µA, 5mA
1µA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
UNRF1A300A
Panasonic Electronic Components

TRANS PREBIAS PNP 100MW ML3-N2

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: ML3-N2
paquet: SC-101, SOT-883
Stock7 440
80mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
100mW
Surface Mount
SC-101, SOT-883
ML3-N2
DRA2114T0L
Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G3-B
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 304
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G3-B
UNR52AVG0L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1.5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
paquet: SC-85
Stock27 498
80mA
50V
2.2k
2.2k
6 @ 5mA, 10V
250mV @ 1.5mA, 10mA
500nA
150MHz
150mW
Surface Mount
SC-85
SMini3-F2
hot UNR221900L
Panasonic Electronic Components

TRANS PREBIAS NPN 200MW MINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
paquet: TO-236-3, SC-59, SOT-23-3
Stock40 692
100mA
50V
1k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
DTA144EUA-TP
Micro Commercial Co

TRANS PREBIAS PNP 200MW SOT323

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: SC-70, SOT-323
Stock25 392
100mA
50V
47k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
SC-70, SOT-323
SOT-323
DRA2152Z0L
Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 510
  • Resistor - Emitter Base (R2) (Ohms): 5.1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G3-B
paquet: TO-236-3, SC-59, SOT-23-3
Stock24 774
100mA
50V
510
5.1k
20 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G3-B
hot MMUN2231LT1G
ON Semiconductor

TRANS PREBIAS NPN 246MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 246mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock360 000
100mA
50V
2.2k
2.2k
8 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
246mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
PDTC143EU,115
Nexperia USA Inc.

TRANS PREBIAS NPN 200MW SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
paquet: SC-70, SOT-323
Stock58 116
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
150mV @ 500µA, 10mA
1µA
-
200mW
Surface Mount
SC-70, SOT-323
SOT-323-3
PDTC114YU,115
Nexperia USA Inc.

TRANS PREBIAS NPN 200MW SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
paquet: SC-70, SOT-323
Stock251 094
100mA
50V
10k
47k
100 @ 5mA, 5V
100mV @ 250µA, 5mA
1µA
230MHz
200mW
Surface Mount
SC-70, SOT-323
SOT-323-3
DTD143ECHZGT116
Rohm Semiconductor

TRANS PREBIAS NPN 0.5A SST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SST3
paquet: -
Request a Quote
500 mA
-
4.7 kOhms
4.7 kOhms
47 @ 50mA, 5V
300mV @ 2.5mA, 50mA
-
200 MHz
200 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SST3
DTC143EEBHZGTL
Rohm Semiconductor

TRANS PREBIAS NPN 0.1A EMT3F

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250 MHz
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: EMT3F (SOT-416FL)
paquet: -
Request a Quote
100 mA
-
4.7 kOhms
4.7 kOhms
30 @ 10mA, 5V
300mV @ 500µA, 10mA
-
250 MHz
150 mW
Surface Mount
SC-89, SOT-490
EMT3F (SOT-416FL)
NHDTC124ETR
Nexperia USA Inc.

TRANS PREBIAS NPN 80V TO236AB

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 170 MHz
  • Power - Max: 250 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
paquet: -
Stock108 252
100 mA
80 V
22 kOhms
22 kOhms
70 @ 10mA, 5V
100mV @ 500µA, 10mA
100nA
170 MHz
250 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
ADTC124EUAQ-13
Diodes Incorporated

TRANS PREBIAS NPN 50V SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 330 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: -
Request a Quote
100 mA
50 V
22 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250 MHz
330 mW
Surface Mount
SC-70, SOT-323
SOT-323
PDTC114EU-ZLX
Nexperia USA Inc.

TRANS PREBIAS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
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