Page 34 - Transistors - Bipolaires (BJT) - RF | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - RF

Dossiers 1 633
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFY193PZZZA1
Infineon Technologies

TRANS RF NPN 12V 80MA MICRO-X1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
  • Gain: 12.5dB ~ 13.5dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: MICRO-X1
  • Supplier Device Package: MICRO-X1
paquet: MICRO-X1
Stock5 760
12V
7.5GHz
2.3dB ~ 2.9dB @ 2GHz
12.5dB ~ 13.5dB
580mW
50 @ 30mA, 8V
80mA
200°C (TJ)
Surface Mount
MICRO-X1
MICRO-X1
BFR 360L3 E6327
Infineon Technologies

TRANSISTOR RF NPN 6V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
  • Gain: 11.5dB ~ 16dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
paquet: SC-101, SOT-883
Stock2 288
9V
14GHz
1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
11.5dB ~ 16dB
210mW
90 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
NE85639-T1-R27-A
CEL

SAME AS 2SC4093 NPN SILICON AMPL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
paquet: TO-253-4, TO-253AA
Stock3 728
12V
9GHz
1.1dB @ 1GHz
13dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
2SC5231A-8-TL-E
ON Semiconductor

TRANS NPN BIPO VHF-UHF SMCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SMCP
paquet: SC-75, SOT-416
Stock6 576
10V
7GHz
1dB @ 1GHz
12dB
100mW
90 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
SMCP
NE46234-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
  • Gain: 8.3dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
paquet: TO-243AA
Stock4 896
12V
6GHz
2.3dB @ 1GHz
8.3dB
1.8W
50 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
AT-41500-GP4
Broadcom Limited

IC TRANS NPN GP BIPOLAR 86PP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 8dB ~ 17dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: Die
Stock4 624
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
8dB ~ 17dB
500mW
30 @ 10mA, 8V
60mA
200°C (TJ)
Surface Mount
Die
Die
MPSH10_D27Z
Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock4 352
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPS5179_D27Z
Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5 248
12V
2GHz
5dB @ 200MHz
15dB
350mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF959RL1
ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5 904
20V
700MHz
3dB @ 200MHz
-
625mW
40 @ 20mA, 10V
100mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot AT-41533-BLKG
Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
  • Gain: 9dB ~ 14.5dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock45 600
12V
-
1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
9dB ~ 14.5dB
225mW
30 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
KSC1393OBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock4 496
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
60 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot UPA806T-T1
CEL

TRANS NPN HF FT=12GHZ SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
paquet: 6-TSSOP, SC-88, SOT-363
Stock211 452
6V
12GHz
1.5dB ~ 2.5dB @ 2GHz
-
200mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-SO
BFS17A,235
NXP

TRANS NPN 15V 25MA 3GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2.8GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 016
15V
2.8GHz
2.5dB @ 800MHz
-
300mW
25 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFS17SH6327XTSA1
Infineon Technologies

TRANS RF NPN 15V 25MA SOT363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
paquet: 6-VSSOP, SC-88, SOT-363
Stock5 440
15V
1.4GHz
3dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
2729-125
Microsemi Corporation

TRANS RF BIPO 350W 15A 55KS1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 2.7GHz ~ 2.9GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 9.5dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KS-1
  • Supplier Device Package: 55KS-1
paquet: 55KS-1
Stock5 008
65V
2.7GHz ~ 2.9GHz
-
9dB ~ 9.5dB
350W
18 @ 600mA, 5V
15A
200°C (TJ)
Chassis Mount
55KS-1
55KS-1
hot MS2267
Microsemi Corporation

TRANS RF BIPO 575W 20A M214

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 8.7dB
  • Power - Max: 575W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M214
  • Supplier Device Package: M214
paquet: M214
Stock4 592
60V
960MHz ~ 1.215GHz
-
8dB ~ 8.7dB
575W
10 @ 1A, 5V
20A
250°C (TJ)
Chassis Mount
M214
M214
MS1003
Microsemi Corporation

TRANS RF BIPO 270W 20A TO-220AC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 136MHz ~ 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M111
  • Supplier Device Package: M111
paquet: M111
Stock3 344
18V
136MHz ~ 175MHz
-
6dB
270W
10 @ 5A, 5V
20A
200°C (TJ)
Surface Mount
M111
M111
MS1512
Microsemi Corporation

TRANS BIPO NPN M122

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 19.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M122
  • Supplier Device Package: M122
paquet: M122
Stock7 984
25V
860MHz
-
10dB
19.4W
-
1.2A
200°C (TJ)
Chassis, Stud Mount
M122
M122
2SC4808G0L
Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SSMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz
  • Gain: 11dB ~ 14dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3
paquet: SC-89, SOT-490
Stock22 608
10V
6GHz
1.3dB ~ 2dB @ 800MHz
11dB ~ 14dB
125mW
50 @ 20mA, 8V
80mA
125°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F3
hot MMBTH11
Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock36 000
25V
650MHz
-
-
225mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BFP 183 E7764
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
paquet: TO-253-4, TO-253AA
Stock22 506
12V
8GHz
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
22dB
250mW
70 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4
PRF947,115
NXP

TRANSISTOR NPN 10V 8.5GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
paquet: SC-70, SOT-323
Stock95 382
10V
8.5GHz
1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
-
250mW
50 @ 5mA, 6V
50mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
hot MMBTH10
Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock8 018 004
25V
650MHz
-
-
225mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
C5H2350N10X
Ampleon USA Inc.

C5H2350N10/DFN-4.5X4-6-1/TR7, 10

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC2814-5-TB-E
onsemi

TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: 320MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 25dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
paquet: -
Request a Quote
-
320MHz
-
25dB
150mW
135 @ 1mA, 6V
30mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
BFP520FE6327
Infineon Technologies

LOW-NOISE SI TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
paquet: -
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3.5V
45GHz
0.95dB @ 1.8GHz
22.5dB
100mW
70 @ 20mA, 2V
40mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
PH1214-300M
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,RADAR,300W,1.

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 90V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.75dB
  • Power - Max: 583W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 21A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
paquet: -
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90V
-
-
8.75dB
583W
-
21A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
CP223-2N3866-WN
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
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30V
500MHz
-
10dB
-
10 @ 50mA, 5V
400mA
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die