Page 47 - Transistors - Bipolaires (BJT) - Matrices, prépolarisés | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - Matrices, prépolarisés

Dossiers 2 060
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
EMF5XV6T5
ON Semiconductor

TRANS NPN PREBIAS/PNP 0.5W SOT56

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 12V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
paquet: SOT-563, SOT-666
Stock3 552
100mA, 500mA
50V, 12V
47k
47k
80 @ 5mA, 10V / 270 @ 10mA, 2V
250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
XP0431600L
Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SMINI6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
paquet: 6-TSSOP, SC-88, SOT-363
Stock6 240
100mA
50V
4.7k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz, 80MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SMINI6-G1
hot DCX114EH-7
Diodes Incorporated

TRANS PREBIAS NPN/PNP SOT563

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
paquet: SOT-563, SOT-666
Stock36 000
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
SOT-563, SOT-666
SOT-563
NSBA143EDP6T5G
ON Semiconductor

TRANS 2PNP PREBIAS 0.408W SOT963

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 408mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
paquet: SOT-963
Stock5 808
100mA
50V
4.7k
4.7k
15 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
408mW
Surface Mount
SOT-963
SOT-963
NSBC115TDP6T5G
ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
paquet: SOT-963
Stock5 424
100mA
50V
100k
-
160 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
339mW
Surface Mount
SOT-963
SOT-963
DCX123JK-7-F
Diodes Incorporated

TRANS NPN/PNP PREBIAS 0.3W SC74R

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74R
  • Supplier Device Package: SC-74R
paquet: SC-74R
Stock3 360
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
300mW
Surface Mount
SC-74R
SC-74R
PEMH24,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
paquet: SOT-563, SOT-666
Stock4 848
100mA
50V
100k
100k
80 @ 5mA, 5V
150mV @ 250µA, 5mA
1µA
-
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
XN0111000L
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP MINI5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: Mini5-G1
paquet: SC-74A, SOT-753
Stock6 224
100mA
50V
47k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
300mW
Surface Mount
SC-74A, SOT-753
Mini5-G1
hot UMA3NTR
Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: UMT5
paquet: 5-TSSOP, SC-70-5, SOT-353
Stock2 016 000
100mA
50V
4.7k
-
100 @ 1mA, 5V
300mV @ 250µA, 5mA
500nA (ICBO)
250MHz
150mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
UMT5
DMA9640M0R
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SSMINI6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
paquet: SOT-563, SOT-666
Stock3 072
100mA
50V
2.2k
47k
80 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
125mW
Surface Mount
SOT-563, SOT-666
SSMini6-F3-B
DDA114TU-7
Diodes Incorporated

TRANS 2PNP PREBIAS 0.2W SOT363

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock5 696
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 100µA, 1mA
-
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
PBLS4005D,115
Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 700mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 300 @ 100mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA, 100nA
  • Frequency - Transition: 150MHz
  • Power - Max: 600mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
paquet: SC-74, SOT-457
Stock28 998
100mA, 700mA
50V, 40V
47k
47k
80 @ 5mA, 5V / 300 @ 100mA, 5V
150mV @ 500µA, 10mA / 310mV @ 100mA, 1A
1µA, 100nA
150MHz
600mW
Surface Mount
SC-74, SOT-457
6-TSOP
hot MUN5114DW1T1G
ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SOT363

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock28 608
100mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
250mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
DMC564010R
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SMini6-F3-B
paquet: 6-SMD, Flat Leads
Stock26 910
100mA
50V
10k
10k
35 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
6-SMD, Flat Leads
SMini6-F3-B
hot EMH2T2R
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
paquet: SOT-563, SOT-666
Stock1 305 132
100mA
50V
47k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
RN4910,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock111 510
100mA
50V
4.7k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN1910FE,LF(CT
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock27 756
100mA
50V
4.7k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
hot MUN5230DW1T1G
ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock612 000
100mA
50V
1k
1k
3 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
250mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
NHUMD13F
Nexperia USA Inc.

TRANS PREBIAS 1NPN 1PNP 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 170MHz, 150MHz
  • Power - Max: 350mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
paquet: -
Stock42 000
100mA
80V
4.7kOhms
47kOhms
100 @ 10mA, 5V
100mV @ 500µA, 10mA
100nA
170MHz, 150MHz
350mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
PUMD9-ZLZ
Nexperia USA Inc.

TRANS PREBIAS

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz, 180MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
paquet: -
Request a Quote
100mA
50V
10kOhms
47kOhms
100 @ 5mA, 5V
100mV @ 250µA, 5mA
1µA
230MHz, 180MHz
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
PUMH11-ZLF
Nexperia USA Inc.

TRANS PREBIAS

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
paquet: -
Request a Quote
100mA
50V
10kOhms
10kOhms
30 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
230MHz
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
RN1706JE-TE85L-F
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

  • Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
paquet: -
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100mA
50V
4.7kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
100mW
Surface Mount
SOT-553
ESV
RN4907FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: -
Stock24 000
100mA
50V
10kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz, 250MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
DCX123JUQ-7-F
Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 3K

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: -
Request a Quote
100mA
50V
2.2kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
UMB9NHE3-TP
Micro Commercial Co

MOSFET

  • Transistor Type: 2 PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: -
Request a Quote
100mA
50V
10kOhms
-
68 @ 5mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
UMD3NHE3-TP
Micro Commercial Co

MOSFET

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: -
Request a Quote
50mA
50V
10kOhms
10kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
RN2906-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: -
Stock8 700
100mA
50V
4.7kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN2908FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: -
Stock18 000
100mA
50V
22kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6