Page 952 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GP10-4004EHE3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-204AL, DO-41, Axial	Stock5 520	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 400V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
EGP30F-TP	Micro Commercial Co	DIODE GEN PURP 300V 3A DO201AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AE, Axial Supplier Device Package: DO-201AE Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-201AE, Axial	Stock3 792	300V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	-	Through Hole	DO-201AE, Axial	DO-201AE	-55°C ~ 150°C
12TQ035STRL	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7 360	35V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
SD103CW-13	Diodes Incorporated	DIODE SCHOTTKY 20V 350MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 28pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	paquet: SOD-123	Stock7 008	20V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 10V	28pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
VS-SD2000C04L	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 2100A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2100A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 6000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	paquet: DO-200AB, B-PUK	Stock2 144	400V	2100A	1.55V @ 6000A	Standard Recovery >500ns, > 200mA (Io)	-	60mA @ 400V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
1N4592R	Powerex Inc.	DIODE GEN PURP 600V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6.5mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	paquet: DO-205AA, DO-8, Stud	Stock6 672	600V	150A	-	Standard Recovery >500ns, > 200mA (Io)	-	6.5mA @ 600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
1N1192	Microsemi Corporation	DIODE RECT GP 100V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 1.19V @ 90A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	paquet: -	Stock7 792	100V	40A (DC)	1.19V @ 90A	Standard Recovery >500ns, > 200mA (Io)	5µs	10µA @ 100V	-	-	-	-	-65°C ~ 200°C
MBRB1090-E3/8W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3 808	90V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
BYWB29-100-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3 248	100V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
SB390-T	Diodes Incorporated	DIODE SCHOTTKY 90V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-201AD, Axial	Stock3 392	90V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
NRVTS12120EMFST3G	ON Semiconductor	DIODE SCHOTTKY 120V 12A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 55µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	paquet: 8-PowerTDFN, 5 Leads	Stock7 360	120V	12A	830mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	55µA @ 120V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
RS3AHR7G	TSC America Inc.	DIODE, FAST, 3A, 50V, 150NS, AEC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AB, SMC	Stock5 184	50V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SS26L R3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-219AB	Stock4 800	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
VS-70HF140	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.4KV 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-203AB, DO-5, Stud	Stock7 344	1400V	70A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
STPS20SM120SR	STMicroelectronics	DIODE SCHOTTKY 120V 20A I2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 890mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 210µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: I2PAK Operating Temperature - Junction: 150°C (Max)	paquet: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock16 230	120V	20A	890mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	210µA @ 120V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	I2PAK	150°C (Max)
DSA2-16A	IXYS	DIODE AVALANCHE 1600V 3.6A AXIAL Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 180°C	paquet: Axial	Stock29 574	1600V	3.6A	1.25V @ 7A	Standard Recovery >500ns, > 200mA (Io)	-	2mA @ 1600V	-	Through Hole	Axial	Axial	-40°C ~ 180°C
1N4448HLP-7	Diodes Incorporated	DIODE GEN PURP 80V 125MA 2DFN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 125mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C	paquet: 2-UFDFN	Stock813 744	80V	125mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	3pF @ 0.5V, 1MHz	Surface Mount	2-UFDFN	X1-DFN1006-2	-65°C ~ 150°C
SMD320HL-TP	Micro Commercial Co	DIODE SCHOTTKY 200V 3A SOD-123HL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HL Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	200 V	3A	900 mV @ 3 A	No Recovery Time > 500mA (Io)	-	10 µA @ 200 V	60pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HL	-55°C ~ 150°C
LL4001G-L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Request a Quote	50 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
UF308G_R2_00001	Panjit International Inc.	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	800 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 800 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N3612-TR	Microchip Technology	DIODE GEN PURP 400V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
MBRAD8200H	Taiwan Semiconductor Corporation	8A, 200V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 125pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: ThinDPAK Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock11 487	200 V	8A	950 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 200 V	125pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	ThinDPAK	-55°C ~ 150°C
BAT54SW-RFG	Taiwan Semiconductor Corporation	SOT-323, 30V, 0.2A, SCHOTTKY DIO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: 125°C	paquet: -	Stock9 000	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	125°C
PU4DB	Taiwan Semiconductor Corporation	25NS, 4A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock18 000	200 V	4A	930 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	78pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SS520C-HF	Comchip Technology	DIODE SCHOTTKY 200V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 200 V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote	200 V	5A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	400pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES2GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock18 000	400 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
R35160	Microchip Technology	RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	paquet: -	Request a Quote	1600 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 1600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
JANTX1N6631-TR	Microchip Technology	DIODE GEN PURP 2A E AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 4 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: E, Axial Operating Temperature - Junction: -65°C ~ 175°C	paquet: -	Request a Quote	-	2A	1.95 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	4 µA @ 1000 V	40pF @ 10V, 1MHz	Through Hole	E, Axial	E, Axial	-65°C ~ 175°C

GP10-4004EHE3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-204AL, DO-41, Axial

Stock5 520

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 400V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

EGP30F-TP

Micro Commercial Co

DIODE GEN PURP 300V 3A DO201AE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AE, Axial
Supplier Device Package: DO-201AE
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-201AE, Axial

Stock3 792

300V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

-

Through Hole

DO-201AE, Axial

DO-201AE

-55°C ~ 150°C

12TQ035STRL

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 15A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7 360

35V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

SD103CW-13

Diodes Incorporated

DIODE SCHOTTKY 20V 350MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 350mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 10V
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

paquet: SOD-123

Stock7 008

20V

350mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

5µA @ 10V

28pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 125°C

VS-SD2000C04L

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 2100A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2100A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 6000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

paquet: DO-200AB, B-PUK

Stock2 144

400V

2100A

1.55V @ 6000A

Standard Recovery >500ns, > 200mA (Io)

-

60mA @ 400V

-

Chassis Mount

DO-200AB, B-PUK

-

1N4592R

Powerex Inc.

DIODE GEN PURP 600V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6.5mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

paquet: DO-205AA, DO-8, Stud

Stock6 672

600V

150A

-

Standard Recovery >500ns, > 200mA (Io)

-

6.5mA @ 600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

1N1192

Microsemi Corporation

DIODE RECT GP 100V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 40A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.19V @ 90A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

paquet: -

Stock7 792

100V

40A (DC)

1.19V @ 90A

Standard Recovery >500ns, > 200mA (Io)

5µs

10µA @ 100V

-

-65°C ~ 200°C

MBRB1090-E3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3 808

90V

10A

800mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

BYWB29-100-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3 248

100V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

SB390-T

Diodes Incorporated

DIODE SCHOTTKY 90V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-201AD, Axial

Stock3 392

90V

3A

790mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 90V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

NRVTS12120EMFST3G

ON Semiconductor

DIODE SCHOTTKY 120V 12A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 55µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: 8-PowerTDFN, 5 Leads

Stock7 360

120V

12A

830mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

55µA @ 120V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 175°C

RS3AHR7G

TSC America Inc.

DIODE, FAST, 3A, 50V, 150NS, AEC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AB, SMC

Stock5 184

50V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 50V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SS26L R3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-219AB

Stock4 800

60V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 60V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

VS-70HF140

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AB, DO-5, Stud

Stock7 344

1400V

70A

1.46V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

4.5mA @ 1400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 150°C

STPS20SM120SR

STMicroelectronics

DIODE SCHOTTKY 120V 20A I2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 890mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 210µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock16 230

120V

20A

890mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

210µA @ 120V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

I2PAK

150°C (Max)

DSA2-16A

IXYS

DIODE AVALANCHE 1600V 3.6A AXIAL

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 180°C

paquet: Axial

Stock29 574

1600V

3.6A

1.25V @ 7A

Standard Recovery >500ns, > 200mA (Io)

-

2mA @ 1600V

-

Through Hole

Axial

-40°C ~ 180°C

1N4448HLP-7

Diodes Incorporated

DIODE GEN PURP 80V 125MA 2DFN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 125mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 80V
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-UFDFN
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C

paquet: 2-UFDFN

Stock813 744

80V

125mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 80V

3pF @ 0.5V, 1MHz

Surface Mount

2-UFDFN

X1-DFN1006-2

-65°C ~ 150°C

SMD320HL-TP

Micro Commercial Co

DIODE SCHOTTKY 200V 3A SOD-123HL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

200 V

3A

900 mV @ 3 A

No Recovery Time > 500mA (Io)

-

10 µA @ 200 V

60pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HL

-55°C ~ 150°C

LL4001G-L0

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C

paquet: -

Request a Quote

50 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 50 V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

MELF

-65°C ~ 150°C

UF308G_R2_00001

Panjit International Inc.

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

800 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 800 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

1N3612-TR

Microchip Technology

DIODE GEN PURP 400V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

-

Through Hole

A, Axial

-65°C ~ 175°C

MBRAD8200H

Taiwan Semiconductor Corporation

8A, 200V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock11 487

200 V

8A

950 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 200 V

125pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

ThinDPAK

-55°C ~ 150°C

BAT54SW-RFG

Taiwan Semiconductor Corporation

SOT-323, 30V, 0.2A, SCHOTTKY DIO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C

paquet: -

Stock9 000

30 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

125°C

PU4DB

Taiwan Semiconductor Corporation

25NS, 4A, 200V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Stock18 000

200 V

4A

930 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 200 V

78pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

SS520C-HF

Comchip Technology

DIODE SCHOTTKY 200V 5A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Request a Quote

200 V

5A

850 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 200 V

400pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

ES2GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock18 000

400 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

R35160

Microchip Technology

RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C

paquet: -

Request a Quote

1600 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 1600 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 200°C

JANTX1N6631-TR

Microchip Technology

DIODE GEN PURP 2A E AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 4 µA @ 1000 V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E, Axial
Operating Temperature - Junction: -65°C ~ 175°C

paquet: -

Request a Quote

-

2A

1.95 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

4 µA @ 1000 V

40pF @ 10V, 1MHz

Through Hole

E, Axial

-65°C ~ 175°C