Page 835 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Diodes - Redresseurs - Simples

Dossiers 52 788
Page  835/1 886
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SF10GG-A
Diodes Incorporated

DIODE GEN PURP 400V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-204AL, DO-41, Axial
Stock5 072
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
10µA @ 400V
75pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
TVR06JHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 600MA DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-204AL, DO-41, Axial
Stock3 392
600V
600mA
-
Fast Recovery =< 500ns, > 200mA (Io)
300ns
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MUR450PFRL
ON Semiconductor

DIODE GEN PURP 520V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-201AA, DO-27, Axial
Stock7 728
520V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
1N3070
Microsemi Corporation

DIODE GEN PURP 175V 100MA DO7

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 175V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 175V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-204AA, DO-7, Axial
Stock7 920
175V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 175V
-
Through Hole
DO-204AA, DO-7, Axial
DO-7
-65°C ~ 175°C
VT3080S-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 80V TO-220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-220-3
Stock3 680
80V
30A
950mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 80V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
AR3PM-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.6A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock5 056
1000V
1.6A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 1000V
34pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
MPG06J-E3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: MPG06, Axial
Stock4 208
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
SK39AHR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock6 944
90V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK24AHR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock3 360
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S3AB M4G
TSC America Inc.

DIODE, 3A, 50V, DO-214AA (SMB)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AA, SMB
Stock7 280
50V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 50V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
GPP10A-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-204AL, DO-41, Axial
Stock6 624
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
hot STTH506B
STMicroelectronics

DIODE GEN PURP 600V 5A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: 175°C (Max)
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock6 656
600V
5A
1.85V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
175°C (Max)
hot STTH1202D
STMicroelectronics

DIODE GEN PURP 200V 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
paquet: TO-220-2
Stock16 188
200V
12A
1.1V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
hot EGF1T-E3/67A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 1A DO214BA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214BA
Stock991 800
1300V
1A
3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1300V
-
Surface Mount
DO-214BA
DO-214BA (GF1)
-55°C ~ 150°C
2CL75
Diotec Semiconductor

HV DIODE D2.5X12 16000V 80NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 16000 V
  • Current - Average Rectified (Io): 5mA
  • Voltage - Forward (Vf) (Max) @ If: 60 V @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 16000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 120°C
paquet: -
Request a Quote
16000 V
5mA
60 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
80 ns
2 µA @ 16000 V
-
Through Hole
Axial
Axial
-40°C ~ 120°C
SBLB1040-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 10A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 125°C
paquet: -
Request a Quote
40 V
10A
600 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 125°C
VS-E5TH1512THN3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75.5 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
1200 V
15A
2.5 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
75.5 ns
50 µA @ 1200 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-MT230BD16CCB
Vishay General Semiconductor - Diodes Division

DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
VS-G1736UR
Vishay General Semiconductor - Diodes Division

DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RL202-AP
Micro Commercial Co

DIODE GEN PURP 100V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
100 V
2A
1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 100 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
S1MLW
Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A SOD123W

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock49 800
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 1000 V
-
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 175°C
JANS1N6643US
Microchip Technology

DIODE GP 50V 300MA B SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Request a Quote
50 V
300mA
1.2 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
6 ns
-
5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
M7FL-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SMA-FL)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
1000 V
1A
1.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 1000 V
-
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SMA-FL)
-55°C ~ 150°C
HER204G-TP
Micro Commercial Co

DIODE GEN PURP 300V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
300 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 300 V
50pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
SCS208AGC17
Rohm Semiconductor

DIODE SIL CARB 650V 8A TO220ACFP

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 160 µA @ 600 V
  • Capacitance @ Vr, F: 291pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: 175°C
paquet: -
Stock2 967
650 V
8A
1.55 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
160 µA @ 600 V
291pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220ACFP
175°C
ND171N18KHPSA2
Infineon Technologies

DIODE GEN PURP 1.8KV 171A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C
paquet: -
Stock3
1800 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1800 V
-
Chassis Mount
Module
-
150°C
BYC30M-650PQ
WeEn Semiconductors

BYC30M-650P/TO220-2L/STANDARD MA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 38 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
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650 V
30A
2.75 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
38 ns
30 µA @ 650 V
-
Through Hole
TO-220-2
TO-220-2L
-65°C ~ 175°C
PCFF30H120SWF
onsemi

1200V/30A GEN7 FRD HS SAWN-ON-FO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 222 ns
  • Current - Reverse Leakage @ Vr: 16 A @ 1.2 kA
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
  • Operating Temperature - Junction: -40°C ~ 175°C
paquet: -
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1200 V
30A
1.9 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
222 ns
16 A @ 1.2 kA
-
Surface Mount
Die
Wafer
-40°C ~ 175°C