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Diodes - Redresseurs - Simples

Dossiers 52 788
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Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTXV1N6627U
Microsemi Corporation

DIODE GEN PURP 400V 1.75A E-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.75A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: SQ-MELF, E
Stock5 696
400V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 400V
-
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
JANTX1N3293
Microsemi Corporation

DIODE GEN PURP 600V 100A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 310A
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
paquet: DO-205AA, DO-8, Stud
Stock4 592
600V
100A
1.55V @ 310A
Small Signal =< 200mA (Io), Any Speed
-
10mA @ 400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
FGP10D-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-204AL, DO-41, Axial
Stock5 424
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
25pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
hot MR854
ON Semiconductor

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: DO-201AA, DO-27, Axial
Stock5 776
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
10µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
VS-150KS20
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 150A B42

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: B-42
  • Supplier Device Package: B-42
  • Operating Temperature - Junction: -40°C ~ 200°C
paquet: B-42
Stock2 064
200V
150A
1.33V @ 471A
Standard Recovery >500ns, > 200mA (Io)
-
35mA @ 200V
-
Chassis, Stud Mount
B-42
B-42
-40°C ~ 200°C
VS-40EPF02-M3
Vishay Semiconductor Diodes Division

DIODE INPUT 40 TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-247-2
Stock5 472
200V
40A
1.25V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 200V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
VS-50PFR40W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 50A DO203AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 125A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -55°C ~ 180°C
paquet: DO-203AB, DO-5, Stud
Stock5 776
400V
50A
1.4V @ 125A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-55°C ~ 180°C
MBRF2045HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-220-2 Full Pack
Stock4 400
45V
20A
750mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
SF803GHC0G
TSC America Inc.

DIODE, SUPER FAST, 8A, 150V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-220-3
Stock6 624
150V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SL42HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 4A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AB, SMC
Stock4 256
20V
4A
420mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
BAS19W-7
Diodes Incorporated

DIODE GEN PURP 100V 200MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 100V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: SC-70, SOT-323
Stock5 168
100V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 100V
5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-65°C ~ 150°C
BYG23M-M3/TR3
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock4 256
1000V
1.5A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US1D M2G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock3 840
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
LS103A-GS08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 15A SOD80

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: SOD-80 QuadroMELF
  • Operating Temperature - Junction: 125°C (Max)
paquet: SOD-80 Variant
Stock5 344
40V
-
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 30V
50pF @ 0V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
125°C (Max)
BAS20WT-TP
Micro Commercial Co

DIODE GEN PURP 150V 200MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 150V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: SC-70, SOT-323
Stock6 880
150V
200mA (DC)
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 150V
5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 150°C
S1KLHRHG
TSC America Inc.

DIODE, 1A, 800V, AEC-Q101, SUB S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-219AB
Stock5 936
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 800V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
hot MBR1645-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: TO-220-2
Stock5 440
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
VSKY10401406-G4-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY CLP1406-G4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 225pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0502 (1406 Metric)
  • Supplier Device Package: CLP1406-2L
  • Operating Temperature - Junction: 150°C (Max)
paquet: 0502 (1406 Metric)
Stock45 882
40V
1A
490mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
225pF @ 0V, 1MHz
Surface Mount
0502 (1406 Metric)
CLP1406-2L
150°C (Max)
BAS70-02WE6327
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SCD80-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 70mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100 ps
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
  • Operating Temperature - Junction: 150°C
paquet: -
Request a Quote
70 V
70mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
100 ps
100 nA @ 50 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
150°C
BAV19WHE3-TP
Micro Commercial Co

DIODE GEN PURP 100V 250MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 100 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock18 000
100 V
250mA
1.25 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 nA @ 100 V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
RB751S40_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 300MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 30 V
  • Capacitance @ Vr, F: 3pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: -
Stock120 249
30 V
300mA
370 mV @ 1 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500 nA @ 30 V
3pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-55°C ~ 125°C
RB751S40-ON
onsemi

RECTIFIER, SCHOTTKY, 0.03A, 40V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
VS-15ETH03STRRHM3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 15A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
300 V
15A
1.25 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
40 µA @ 300 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 175°C
B58195XP-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 1.5A FBP-02L

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 40 V
  • Capacitance @ Vr, F: 180pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: FBP-02L
  • Operating Temperature - Junction: 125°C
paquet: -
Request a Quote
40 V
1.5A
580 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 40 V
180pF @ 0V, 1MHz
Surface Mount
0603 (1608 Metric)
FBP-02L
125°C
SS36FSH
Taiwan Semiconductor Corporation

3A, 60V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 60 V
  • Capacitance @ Vr, F: 54pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
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60 V
3A
720 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 60 V
54pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
BAS16WE6327
Infineon Technologies

DIODE GP 80V 250MA SOT323-3-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3-1
  • Operating Temperature - Junction: 150°C
paquet: -
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80 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3-1
150°C
JANS1N5623-TR
Microchip Technology

DIODE GEN PURP 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 200°C
paquet: -
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-
1A
1.6 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
-
-
Through Hole
A, Axial
A, Axial
-65°C ~ 200°C
RHRP8120S2536
Harris Corporation

RECTIFIER, AVALANCHE, 2 CHANNEL,

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
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-
-
-
-
-
-
-
-
-
-
-