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Diodes - Redresseurs - Simples

Dossiers 52 788
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDB06S60CATMA2
Infineon Technologies

DIODE SCHOTTKY 600V 6A D2PAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 80µA @ 600V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature - Junction: -
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7 120
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-
N6075D
Diodes Incorporated

DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Stock5 968
-
-
-
-
-
-
-
-
-
-
-
MBR16H45-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-220-2
Stock5 696
45V
16A
660mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
hot SB160A-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-204AL, DO-41, Axial
Stock45 540
60V
1A
650mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
R6201840XXOO
Powerex Inc.

DIODE MODULE 1.8KV 400A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -
paquet: DO-200AA, A-PUK
Stock4 656
1800V
400A
1.5V @ 800A
Standard Recovery >500ns, > 200mA (Io)
9µs
50mA @ 1800V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, R62
-
PFF2
Semtech Corporation

DIODE GEN PURP 200V 1.25A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.25A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 30pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: Axial
Stock6 768
200V
1.25A
2.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 200V
30pF @ 5V, 1MHz
Through Hole
Axial
-
-65°C ~ 175°C
VS-8EWF10STRR-M3
Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 270ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 904
1000V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
270ns
100µA @ 1000V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
hot VB10150S-E3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5 856
150V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
MBR1560STR
SMC Diode Solutions

DIODE SCHOTTKY 60V 15A TO277B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 60V
  • Capacitance @ Vr, F: 850pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock7 200
60V
15A
590mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
850pF @ 5V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
FR306G A0G
TSC America Inc.

DIODE, FAST, 3A, 800V, 500NS, DO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-201AD, Axial
Stock6 320
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
BAL99-E3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 70V 250MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 2.5µA @ 70V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-236-3, SC-59, SOT-23-3
Stock4 528
70V
250mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
6ns
2.5µA @ 70V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
SBR12M120P5-13
Diodes Incorporated

DIODE SB 120V 12A POWERDI5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: PowerDI? 5
Stock4 864
120V
12A
830mV @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
200µA @ 120V
-
Surface Mount
PowerDI? 5
PowerDI?5
-55°C ~ 150°C
FDH333TR
Fairchild/ON Semiconductor

DIODE GEN PURP 125V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3nA @ 125V
  • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
paquet: DO-204AH, DO-35, Axial
Stock7 584
125V
200mA
1.15V @ 300mA
Small Signal =< 200mA (Io), Any Speed
-
3nA @ 125V
6pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
hot STTH512FP
STMicroelectronics

DIODE GEN PURP 1.2KV 5A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: 175°C (Max)
paquet: TO-220-2 Full Pack, Isolated Tab
Stock155 292
1200V
5A
2.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 1200V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FPAC
175°C (Max)
UF110SM-TR
Microchip Technology

DIODE GEN PURP 100V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB (MELF, LL41)
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: -
Request a Quote
100 V
1A
690 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
70pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB (MELF, LL41)
-55°C ~ 125°C
SRF1060
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 10A ITO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
60 V
10A
700 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
SF13M-TP
Micro Commercial Co

DIODE GEN PURP 150V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (HSMA)
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
Request a Quote
150 V
1A
-
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 150 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (HSMA)
-65°C ~ 150°C
YQ1VWM10ATFTR
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 1A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6 µA @ 100 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: PMDE
  • Operating Temperature - Junction: 175°C
paquet: -
Stock9 000
100 V
1A
700 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
6 µA @ 100 V
25pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
PMDE
175°C
JANS1N5802US-TR
Microchip Technology

DIODE GEN PURP 50V 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Request a Quote
50 V
1A
975 mV @ 2.5 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
-
25pF @ 10V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
RUR3080
Harris Corporation

DIODE AVALANCHE 800V 30A TO220AC

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Request a Quote
800 V
30A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
100 µA @ 800 V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
SVM1045V_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 45V 10A TO277

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock14 874
45 V
10A
470 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 45 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277
-55°C ~ 150°C
CD214A-B140LR
Bourns Inc.

DIODE SCHOTTKY 40V 1A 2SMD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 40 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: -
Stock17 355
40 V
1A
380 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 40 V
110pF @ 4V, 1MHz
Surface Mount
2-SMD, No Lead
2-SMD
-55°C ~ 125°C
PMEG60T20ELPX
Nexperia USA Inc.

DIODE SCHOTTKY 60V 2A SOD128

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 14 ns
  • Current - Reverse Leakage @ Vr: 1.2 µA @ 60 V
  • Capacitance @ Vr, F: 400pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128/CFP5
  • Operating Temperature - Junction: 175°C (Max)
paquet: -
Request a Quote
60 V
2A
620 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
14 ns
1.2 µA @ 60 V
400pF @ 1V, 1MHz
Surface Mount
SOD-128
SOD-128/CFP5
175°C (Max)
RFUH20NS6SFHTL
Rohm Semiconductor

DIODE GEN PURP 600V 20A LPDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 315pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock4 962
600 V
20A
2.8 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 600 V
315pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C (Max)
SCS312AMC
Rohm Semiconductor

DIODE SIL CARB 650V 12A TO220FM

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 600pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FM
  • Operating Temperature - Junction: 175°C (Max)
paquet: -
Stock2 991
650 V
12A
1.5 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 650 V
600pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220FM
175°C (Max)
1N459A_S00Z
onsemi

DIODE GEN PURP 200V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 nA @ 175 V
  • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
paquet: -
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200 V
500mA
1 V @ 100 mA
Standard Recovery >500ns, > 200mA (Io)
-
25 nA @ 175 V
6pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
VS-6EVH06HM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 6A SLIMDPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 28 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
600 V
6A
2.1 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
28 ns
5 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
SlimDPAK
-55°C ~ 175°C
MBR215AFC_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 150V 2A SMAF-C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF-C
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock7 620
150 V
2A
900 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 150 V
60pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF-C
-55°C ~ 150°C