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Diodes - Redresseurs - Simples

Dossiers 52 788
Page  777/1 886
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RF301B6STL
Rohm Semiconductor

DIODE GEN PURPOSE CPD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Stock3 520
-
-
-
-
-
-
-
-
-
-
-
MBRH15035L
GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
paquet: D-67
Stock7 360
35V
150A
600mV @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 35V
-
Chassis Mount
D-67
D-67
-
R9G23009ASOO
Powerex Inc.

DIODE FAST REC R9G 900A 3000V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Stock3 024
-
-
-
-
-
-
-
-
-
-
-
STTH3L06B-TR
STMicroelectronics

DIODE GEN PURP 600V 3A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: 175°C (Max)
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7 232
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
3µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
175°C (Max)
VS-T85HFL40S02
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 85A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 20mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
paquet: D-55 T-Module
Stock6 096
400V
85A
-
Fast Recovery =< 500ns, > 200mA (Io)
200ns
20mA @ 400V
-
Chassis Mount
D-55 T-Module
D-55
-
VT760HM3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 7.5A 60V TO-220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-220-2
Stock7 984
60V
7.5A
800mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFAS808G MNG
TSC America Inc.

DIODE, SUPER FAST, 8A, 600V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock4 800
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
SK86C M6G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AB, SMC
Stock2 464
60V
8A
750mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
NRVB8H100MFST3G
ON Semiconductor

DIODE SCHOTTKY 100V 8A 5DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN, 5 Leads
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: 8-PowerTDFN, 5 Leads
Stock4 576
100V
8A
900mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
2µA @ 100V
-
Surface Mount
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
-55°C ~ 175°C
S4PDHM3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 4A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock3 200
200V
4A
1.1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
2.5µs
10µA @ 200V
30pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
RS1JLHM2G
TSC America Inc.

DIODE, FAST, 0.8A, 600V, 250NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-219AB
Stock7 936
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
V35PW10HM3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 35A 100V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock2 272
100V
35A
880mV @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
2500pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 150°C
VS-65PQ015PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 65A TO247AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 65A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 65A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 18mA @ 15V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: TO-247-3
Stock17 604
15V
65A
500mV @ 65A
Fast Recovery =< 500ns, > 200mA (Io)
-
18mA @ 15V
-
Through Hole
TO-247-3
TO-247AC
-55°C ~ 125°C
hot 1N5418TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: SOD-64, Axial
Stock30 000
400V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
1µA @ 400V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
hot 1N5819RLG
ON Semiconductor

DIODE SCHOTTKY 40V 1A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: DO-204AL, DO-41, Axial
Stock1 014 372
40V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 125°C
hot SDM20U40-7
Diodes Incorporated

DIODE SCHOTTKY 40V 250MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: SC-79, SOD-523
Stock9 236 196
40V
250mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 30V
50pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-65°C ~ 125°C
GL1M
Diotec Semiconductor

DIODE GEN PURP 1KV 1A DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA, MINI-MELF
  • Operating Temperature - Junction: -50°C ~ 175°C
paquet: -
Stock14 070
1000 V
1A
1.3 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 1000 V
-
Surface Mount
DO-213AA
DO-213AA, MINI-MELF
-50°C ~ 175°C
1SS4009HHTE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MMBD4148HE3-TP
Micro Commercial Co

DIODE GEN PURP 75V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 855 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 25 nA @ 20 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock16 614
75 V
200mA
855 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
25 nA @ 20 V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
NTE573-2
NTE Electronics, Inc

DIODE SCHOTTKY 200V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 200 V
  • Capacitance @ Vr, F: 120pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
Request a Quote
200 V
5A
900 mV @ 5 A
No Recovery Time > 500mA (Io)
-
200 µA @ 200 V
120pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
CD5804
Microchip Technology

RECTIFIER UFR,FRR

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
V20K60HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 5A FLATPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700 µA @ 60 V
  • Capacitance @ Vr, F: 2910pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: -
Request a Quote
60 V
5A
610 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
700 µA @ 60 V
2910pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
-40°C ~ 150°C
RB751S40-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 40V 300MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 40 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: -
Stock33 294
40 V
300mA
370 mV @ 1 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 40 V
2pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-55°C ~ 125°C
NTSV20U80CTG
onsemi

RECTIFIER DIODE, SCHOTTKY, 1 PHA

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
1N1613A
Microchip Technology

DIODE GEN PURP 100V 5A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
paquet: -
Request a Quote
100 V
5A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
MSASC25W80K-TR
Microchip Technology

POWER SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
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DHVSD521LP-7B
Diodes Incorporated

HIVOLT SWITCHING DIODE BVR > 100

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 325 V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 150 nA @ 250 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: X1-DFN1006-2
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
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325 V
400mA
1.1 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
150 nA @ 250 V
5pF @ 0V, 1MHz
Surface Mount
0402 (1006 Metric)
X1-DFN1006-2
-55°C ~ 150°C
SDT30B100D1-13
Diodes Incorporated

DIODE SCHOTTKY 100V 30A TO252-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock3 816
100 V
30A
850 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
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120 µA @ 100 V
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Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-3
-55°C ~ 175°C