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Diodes - Redresseurs - Simples

Dossiers 52 788
Page  738/1 886
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDC08S120EX7SA1
Infineon Technologies

DIODE SCHOTTKY 1200V 7.5A DIE

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 7.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 180µA @ 1200V
  • Capacitance @ Vr, F: 380pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: Die
Stock4 880
1200V
7.5A (DC)
1.8V @ 7.5A
No Recovery Time > 500mA (Io)
0ns
180µA @ 1200V
380pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
R9G21209ASOO
Powerex Inc.

DIODE FAST REC R9G 900A 1200V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Stock3 952
-
-
-
-
-
-
-
-
-
-
-
MBRB750HE3/81
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 7.5A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5 296
50V
7.5A
750mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
SD101C-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 15MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 15mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 125°C (Max)
paquet: DO-204AH, DO-35, Axial
Stock4 864
40V
15mA (DC)
900mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 30V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
BAV19WS-7
Diodes Incorporated

DIODE GEN PURP 100V 200MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 100V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: SC-76, SOD-323
Stock3 456
100V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 100V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-65°C ~ 150°C
MBR3545R
GeneSiC Semiconductor

DIODE SCHOTTKY REV 45V DO4

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-203AA, DO-4, Stud
Stock6 176
45V
35A
680mV @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 20V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-55°C ~ 150°C
VS-6EWL06FNTRL-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7 424
600V
6A
1.25V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
AK 04WS
Sanken

DIODE SCHOTTKY 40V 1A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: Axial
Stock6 784
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 40V
-
Through Hole
Axial
Axial
-40°C ~ 150°C
SJPW-F6VL
Sanken

DIODE SCHOTTKY SMD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: 2-SMD, J-Lead
Stock7 488
60V
1.5A
700mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
-
Surface Mount
2-SMD, J-Lead
2-SMD
-40°C ~ 150°C
S3JBTR
SMC Diode Solutions

DIODE GEN PURP 600V 3A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-214AA, SMB
Stock5 856
600V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-65°C ~ 150°C
BAS382-TR3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 30MA MICROMLF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200nA @ 50V
  • Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: MicroMELF
  • Operating Temperature - Junction: 125°C (Max)
paquet: 2-SMD, No Lead
Stock6 544
50V
30mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 50V
1.6pF @ 1V, 1MHz
Surface Mount
2-SMD, No Lead
MicroMELF
125°C (Max)
BAT43W RHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: SOD-123
Stock3 248
30V
200mA (DC)
650mV @ 50mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
CDSW19-G
Comchip Technology

DIODE GEN PURP 100V 200MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 100V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -
paquet: SOD-123
Stock6 864
100V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 100V
5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-
hot FFP08S60SNTU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 8A TO220-2L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 32ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: TO-220-2
Stock7 520
600V
8A
3.4V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
100µA @ 600V
-
Through Hole
TO-220-2
TO-220-2L
-65°C ~ 150°C
SBR5E45P5-7
Diodes Incorporated

DIODE RECT SBR 45V 5A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 280µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: PowerDI? 5
Stock14 706
45V
5A
600mV @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
280µA @ 45V
-
Surface Mount
PowerDI? 5
PowerDI?5
-55°C ~ 150°C
B350BQ-13-F
Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMB TR 3K

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
50 V
3A
700 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
FM5822A-W
Rectron USA

DIODE SCHOTTKY 40V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 40 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: 150°C
paquet: -
Request a Quote
40 V
3A
460 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 40 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
150°C
RBR5L40ADDTE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 5A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
paquet: -
Stock1 506
40 V
5A
530 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
SE8D20DHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 2A SLIMSMAW

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SlimSMAW (DO-221AD)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock41 946
200 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
1.2 µs
5 µA @ 200 V
12pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SlimSMAW (DO-221AD)
-55°C ~ 175°C
1N2431R
Solid State Inc.

DIODE GEN PURP REV 300V 100A DO8

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
paquet: -
Request a Quote
300 V
100A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 300 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
PMEG3030CERX
Nexperia USA Inc.

PMEG3030CER/SOD123W/SOD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.5 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: 145pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: 175°C
paquet: -
Stock17 670
30 V
3A
580 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
5.5 ns
50 µA @ 30 V
145pF @ 1V, 1MHz
Surface Mount
SOD-123W
SOD-123W
175°C
UFR10280
Microchip Technology

DIODE GEN PURP 800V 100A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 800 V
  • Capacitance @ Vr, F: 210pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Request a Quote
800 V
100A
1 V @ 100 A
Fast Recovery =< 500ns, > 200mA (Io)
120 ns
25 µA @ 800 V
210pF @ 10V, 1MHz
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 175°C
RBR2LAM30ATFTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 2A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock7 086
30 V
2A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 30 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
CR5-060-TR
Central Semiconductor Corp

DIODE GEN PURP 600V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
Request a Quote
600 V
5A
1.2 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
BY550-1000
Diotec Semiconductor

DIODE GEN PURP 1KV 5A DO201

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201
  • Operating Temperature - Junction: -50°C ~ 175°C
paquet: -
Stock3 555
1000 V
5A
1 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 1000 V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201
-50°C ~ 175°C
SICR10650
SMC Diode Solutions

DIODE SIL CARB 650V 10A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 695pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock504
650 V
10A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
695pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
SB260-AP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: 140pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
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60 V
2A
700 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
140pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 150°C
JANTXV1N6620-TR
Microchip Technology

DIODE GEN PURP 220V 1.2A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 220 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 220 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
Request a Quote
220 V
1.2A
1.4 V @ 1.2 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
500 nA @ 220 V
-
Through Hole
A, Axial
A, Axial
-65°C ~ 150°C